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    2N4232A Search Results

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    2N4232A Price and Stock

    Microchip Technology Inc 2N4232A

    PNP TRANSISTOR
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    Onlinecomponents.com 2N4232A
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    Central Semiconductor Corp 2N4232A

    Bipolar Power Transistor NPN Amplifier/Switch 5A 60V 2-Pin TO-66 Through Hole Bag - Rail/Tube (Alt: 2N4232A)
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    Central Semiconductor Corp 2N4232A PBFREE

    Transistor GP BJT NPN 60V 5A 2-Pin TO-66 Sleeve (Alt: 2N4232A PBFREE)
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    Central Semiconductor Corp 2N4232A TIN/LEAD

    Transistor GP BJT NPN 60V 5A 2-Pin TO-66 Sleeve (Alt: 2N4232A TIN/LEAD)
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    Motorola Semiconductor Products 2N4232A

    POWER BIPOLAR TRANSISTOR, 3A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-66, METAL, 2 PIN
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    Quest Components 2N4232A 710
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    2N4232A 8
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    2N4232A 3
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    2N4232A Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4232A Central Semiconductor Power Transistors Original PDF
    2N4232A Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=5 / Hfe=25-100 / fT(Hz)=4M / Pwr(W)=35 Original PDF
    2N4232A Boca Semiconductor COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=5 / Hfe=25-100 / fT(Hz)=4M / Pwr(W)=35 Scan PDF
    2N4232A Diode Transistor Transistors Scan PDF
    2N4232A General Transistor Power Transistor Selection Guide Scan PDF
    2N4232A Mospec POWER TRANSISTORS(5A,75W) - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=5 / Hfe=25-100 / fT(Hz)=4M / Pwr(W)=35 Scan PDF
    2N4232A Mospec Complementary Silicon Medium-Power Transistor Scan PDF
    2N4232A Motorola The European Selection Data Book 1976 Scan PDF
    2N4232A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N4232A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4232A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4232A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4232A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4232A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4232A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4232A Unknown Transistor Replacements Scan PDF
    2N4232A Unknown Transistor Replacements Scan PDF
    2N4232A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4232A New England Semiconductor PNP TO-66 / NPN TO-8 Transistor Scan PDF
    2N4232A New England Semiconductor NPN TO-66 Transistor Scan PDF

    2N4232A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process,


    Original
    PDF 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 2N4231A,

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    2N4232A

    Abstract: No abstract text available
    Text: 2N4232A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N4232A O213AA) 1-Aug-02 2N4232A

    2N5428

    Abstract: No abstract text available
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N5428

    Untitled

    Abstract: No abstract text available
    Text: 2N4232A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N4232A O213AA) 30-Jul-02

    40312

    Abstract: 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


    Original
    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 40312 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049

    B0935

    Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7


    Original
    PDF 2N389 2N1470 BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 B0935 2s0880 je181 to127 2SC1983 Sanken 2S0762 to-53 MJE31A GS2013 G

    bu808 equivalent

    Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
    Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200


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    PDF 2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143

    2SD369A

    Abstract: to-53 2SC1025 MJE2491 KT816V matsua
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M


    Original
    PDF 2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 BDT31A 2SD369A to-53 2SC1025 MJE2491 KT816V matsua

    2N4231

    Abstract: 2N4233A IR425 2N4231A 2N4232A 2N6212 2N6312 2N6313 2N6314
    Text: Æà MOS PEC COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS NPN 2N4231A 2N4232A 2N4233A .designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE!sat = 0 .7 V M a x .)@ lc = 1.5A ‘ Excellent DC Current Gain


    OCR Scan
    PDF 2N4231A 2N4233A 12N6312 2N6314 2N6312 2N4232A 2N6313 2N6314 2N4231 IR425 2N6212

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 2N4114 2N4150 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4240 2N4260 2N4269


    OCR Scan
    PDF 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113

    Untitled

    Abstract: No abstract text available
    Text: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069


    OCR Scan
    PDF 2N5468 2N5469 2N2811 2N2812 2N2813 2N6495 2N4231 2N4232A 2N4233 2N4233A

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


    OCR Scan
    PDF A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan
    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan
    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    5N520

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25


    OCR Scan
    PDF 2N6317 2N6318 2N6372 2N6373 2N6374 2N5955 2N5954 5N520

    Untitled

    Abstract: No abstract text available
    Text: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049


    OCR Scan
    PDF 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746
    Text: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z


    OCR Scan
    PDF fl2S40a2 2N3740 2N3741 2N3744 O-111 2N3745 2N3746 2N3747 2NXXXX SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3861

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


    OCR Scan
    PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    2N3740

    Abstract: 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4898 2N4899 2N4910 2N4911
    Text: NE III ENGLAND SEMI CONDUCT OR 5TE bSbHTTa D = 1-5À VCEO SUS = 4 0 -4 2 5 V fT = 3-10 M H z □□□□□SO lc ( M A X ) Type No. 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4899 2N4900 2N5344 2N4910 2N4911 2N4912 2N3767 VCEQ (SUS) (V) 1C (MAX) (A) 60


    OCR Scan
    PDF 0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4898 2N4910 2N1483 2N3740A 2N3741A 2N4899 2N4911

    DTL1636

    Abstract: DTL1638 DTL1642 DTL1644 DTL1645 DTL1646 DTL1647 DTL1652 DTL1654 DTL1657
    Text: TK AINTSTSTÖR SlVDt. NPN TO-66 p g U ff5T>2 U l u U E T T R A N S I S T O R CO CO AMD IN KT 84D INC- D " j 2SMÖ3SE □□□□131 □ D 'T-3 3 - o Y 00 13 1 DIODE TMI\l515TiffiCD.liniC. •WkL rn cc OUV*0&0*4001 F A X No. 201*575*5863 lc MAX 1.0to 7.0A


    OCR Scan
    PDF TMI\l515TDRCD 201-575-S863 2n3766 2n3767 2n4910 2n4911 2n4912 2n3740 2n3741 2n4898 DTL1636 DTL1638 DTL1642 DTL1644 DTL1645 DTL1646 DTL1647 DTL1652 DTL1654 DTL1657

    Untitled

    Abstract: No abstract text available
    Text: NEW E N 6 L A N D SEMICONDUCTOR S'îE ]> ÜQÜDDMT NPN TO-66 077 INES lc MAX = 1-7A Vce<xsu$) = 3 5-4 00 V = .75-50 M Hz I t Case 8 0 9 T'33' o I Type No. PNP Comple­ ment VCEfl (SUS) (V) 1C (MAX) W hFI IC/VCE (min-max ® A/V) Ptt @ TC = 2 5 °C (Watts)


    OCR Scan
    PDF 5-400V T--33- 2n3054a 2n6049 2n3583 2n6211 2n3584 2n6212 2n3585 2n6213

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


    OCR Scan
    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111