tl527
Abstract: 741i NCN30
Text: Advance Information KM 29V64000T/R FLASH M EM O RY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The K M 29V 64000T /R is a 8 M 8 ,38 8 ,6 0 8 x8 bit N A N D • O rganization Plash m em ory w ith a sp a re 2 5 6 K (2 6 2 ,1 4 4 )x 8 bit.
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KM29V64000T/R
200us
tl527
741i
NCN30
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY 29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
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29V640
Abstract: No abstract text available
Text: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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200us
KM29V64000R
0D31BÃ
29V640
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29V640
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY 29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The 29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit.
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KM29V64000T/R
KM29V64000T/R
528-byte
200ns
29V640
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KM29N16000TS
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction 2. Product Guide 3. Ordering information II. 4M FLASH MEMORY 1. KM29N040T 5.0V / 512K x8 bit 17 2. KM29V040T 3.3V / 512K x8 bit 36 57 16M FLASH MEMORY IV. V. 1. KM29N16000T7R 5.0V / 2M 2. KM29N16000TS/RS
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KM29N040T
KM29V040T
KM29N16000T7R
KM29N16000TS/RS
KM29N16000ET/R
KM29N16000ETS/RS
29N16000AT/R
KM29N16000ATS/RS
KM29V16000AT/R
KM29V16000ATS/RS
KM29N16000TS
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VOICE RECORDER IC programming
Abstract: ri8c
Text: Advance Information 29V64001T/R 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64001
200us
VOICE RECORDER IC programming
ri8c
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KM29V64001T
Abstract: v6400
Text: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The 29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for
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V64001
200us
KM29V64001T
003177G
KM29V64001T
v6400
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