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    28FS1 Price and Stock

    Samtec Inc MTSW-104-28-F-S-1030

    CONN HEADER VERT 4POS 2.54MM
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    DigiKey MTSW-104-28-F-S-1030 Bulk 1
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    Avnet Americas MTSW-104-28-F-S-1030 Bulk 1
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    Mouser Electronics MTSW-104-28-F-S-1030
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    Master Electronics MTSW-104-28-F-S-1030
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    Sager MTSW-104-28-F-S-1030 1
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    Samtec Inc MTSW-104-28-F-S-185

    Conn Unshrouded HDR 4 POS 2.54mm Solder ST Through Hole - Bulk (Alt: MTSW-104-28-F-S-18)
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    Master Electronics MTSW-104-28-F-S-185
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    Sager MTSW-104-28-F-S-185
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    Samtec Inc MTSW-102-28-F-S-1030

    Conn Unshrouded HDR 2 POS 2.54mm Solder ST Through Hole - Bulk (Alt: MTSW-102-28-F-S-10)
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    Master Electronics MTSW-102-28-F-S-1030
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    Samtec Inc MTSW-105-28-F-S-1030-001

    Conn Unshrouded HDR 5 POS 2.54mm Solder ST Through Hole - Bulk (Alt: MTSW-105-28-F-S-10)
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    Master Electronics MTSW-105-28-F-S-1030-001
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    Samtec Inc MTSW-104-28-F-S-1030-001

    Conn Unshrouded HDR 4 POS 2.54mm Solder ST Through Hole - Bulk (Alt: MTSW-104-28-F-S-10)
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    Master Electronics MTSW-104-28-F-S-1030-001
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    Find more 28FS1 price and stock on Findchips.com

    28FS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time


    OCR Scan     		PDF 32-Pin 28F512A 2S752Ã 0032fc

    28f512a

    Abstract: GE capacitor 28f TMS28F512A TEXAS INSTRUMENTS
    Text: TMS28F512A 524288-BIT F L A S H M E M O R Y S M JS 514B - FEBRUARY 1 9 9 4 - REVISED MARCH 1996 • O r g an iz a t io n . . . 64K x 8-Bit Flash M e m o r y • All I n p u t s / O u t p u t s T T L - C o m p a t i b l e • V qq Tolerance ±10% PM P A C K A G E


    OCR Scan     		PDF TMS28F512A 524288-BIT 28FS1 28f512a GE capacitor 28f TMS28F512A TEXAS INSTRUMENTS

    N28F512-150

    Abstract: 26F512 intel PLD
    Text: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program


    OCR Scan     		PDF D07fa233 28F512 -32-L P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, 26F512 intel PLD

    TMS28F512A TEXAS INSTRUMENTS

    Abstract: TMS28F512A
    Text: TMS28F512A 524288-BIT FLASH MEMORY SMJS514B - FEBRUARY 1994 - REVISED MARCH 1996 Organization . . . 64K x 8-Bit Flash Memory All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time 28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15


    OCR Scan     		PDF TMS28F512A 524288-BIT SMJS514B 28F512A-10 28F512A-12 28F512A-15 28F512A-17 TMS28F512A 288-bit, TMS28F512A TEXAS INSTRUMENTS

    intel Automotive

    Abstract: AP28F512-120
    Text: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ¡is Typical Byte-Program — 1 Second Chip-Program


    OCR Scan     		PDF A28F512 AP28F512-150 AP28F512-120 AN28F512-150 AN28F512-120 ER-20, ER-23, RR-60, AP-316, intel Automotive

    N28F512-200

    Abstract: P28F512-200 28F512-150 29020 28f512-200
    Text: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		PDF 28F512 28F512 P28F512-120 P28F512-150 P28F512-200 32-PIN 32-LEAD N28F512-120 N28F512-150 N28F512-200 N28F512-200 P28F512-200 28F512-150 29020 28f512-200

    Untitled

    Abstract: No abstract text available
    Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP


    OCR Scan     		PDF 28F512 P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, RR-60, ER-24,

    Untitled

    Abstract: No abstract text available
    Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP


    OCR Scan     		PDF 28F512 Flas12-120 N28F512-120 TP28F512-120 P28F512-150 N28F512-150 TN28F512-120 ER-20, ER-24, RR-60,

    28FS12

    Abstract: No abstract text available
    Text: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current


    OCR Scan     		PDF Am28F512 32-Pin Am28F512-75 28FS12

    AP28F512-120

    Abstract: AP28F512 AN28F512-120 28F512 AP28F512-150 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092
    Text: In te l A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Autom otive Tem perature Range: - ¥ T C to + 12S*C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 n9 Typical Byte-Program


    OCR Scan     		PDF A28F512 32-PIN 32-LEAD -H250C AP28F512-150 AN28F512-150 AP28F512-120 AN28F512-120 ER-20, AP28F512 AN28F512-120 28F512 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092

    28FS12

    Abstract: 51212
    Text: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		PDF 28F512 32-Lead N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, ER-24, RR-60, AP-316, 28FS12 51212

    D28F512-120P1C4

    Abstract: d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200
    Text: INTE L CORP intel • M EM OR Y/ LO GI C SOE D ■ H&2bl 7h Q0b72fl2 S ■ V -^ -/5 -2 7 28F512 512K (64K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 iia Typical Byte-Program


    OCR Scan     		PDF 40Sbl7b Q0b75Ã T-M-ft-17 28F512 00b7304 T-46-13-27 32-PIN 32-LEAD 120ns D28F512-120P1C4 d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200