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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver


    Original     		PDF 512MB HB54A5129F1-B75B/10B HB54A5129F1 256Mbits M01E0107 E0090H60

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in


    Original     		PDF HB54R1G9F2U-A75B/B75B/10B HB54R1G9F2U 256Mbits HM5425401BTB) M01E0107 E0192H20

    HM5425161BTT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits


    Original     		PDF 128MB HB54A1288KM HB54A1288KM 256Mbits HM5425161BTT) E0190H10 HM5425161BTT

    cmos 4069

    Abstract: DIMM Socket, 184-pin HB54A5129F1 HB54A5129F1-10B HB54A5129F1-B75B
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Description Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1


    Original     		PDF 512MB HB54A5129F1-B75B/10B HB54A5129F1 256Mbits M01E0107 E0090H60 cmos 4069 DIMM Socket, 184-pin HB54A5129F1-10B HB54A5129F1-B75B

    TC59LM806CFT

    Abstract: TC59LM814CFT
    Text: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network


    Original     		PDF TC59LM814/06CFT-50 256Mbits 304-WORDS 16-BITS 608-WORDS TC59LM814/06CFT TC59LM814CFT TC59LM806CFT

    TC59LM806CTG

    Abstract: TC59LM814CTG
    Text: TC59LM814/06CTG-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CTG are Network


    Original     		PDF TC59LM814/06CTG-50 256Mbits 304-WORDS 16-BITS 608-WORDS TC59LM814/06CTG TC59LM814CTG TC59LM806CTG

    Untitled

    Abstract: No abstract text available
    Text: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network


    Original     		PDF TC59LM814/06CFT-50 256Mbits 304-WORDS 16-BITS 608-WORDS TC59LM814/06CFT TC59LM814CFT TC59LM806CFT

    HB54A5129F1U

    Abstract: HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


    Original     		PDF 512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) M01E0107 E0191H30 HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT

    HB54R1G9F2U

    Abstract: HB54R1G9F2U-10B HB54R1G9F2U-A75B HB54R1G9F2U-B75B
    Text: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in


    Original     		PDF HB54R1G9F2U-A75B/B75B/10B HB54R1G9F2U 256Mbits HM5425401BTB) M01E0107 E0192H30 HB54R1G9F2U-10B HB54R1G9F2U-A75B HB54R1G9F2U-B75B

    EBD51RC4AAFA-7B

    Abstract: DDR266B EBD51RC4AAFA EBD51RC4AAFA-7A M2S56D20ATP-75A DDR266A
    Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM EBD51RC4AAFA 64M words x 72 bits, 1 Bank Description Features The EBD51RC4AAFA is a 64M words × 72 bits × 1 bank Double Data Rate (DDR) SDRAM Module, mounting 18 pieces of 256Mbits DDR SDRAM sealed


    Original     		PDF 512MB EBD51RC4AAFA EBD51RC4AAFA 256Mbits M01E0107 E0335E10 EBD51RC4AAFA-7B DDR266B EBD51RC4AAFA-7A M2S56D20ATP-75A DDR266A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM EBD51RC4AAFA 64M words x 72 bits, 1 Bank Description Features The EBD51RC4AAFA is a 64M words × 72 bits × 1 bank Double Data Rate (DDR) SDRAM Module, mounting 18 pieces of 256Mbits DDR SDRAM sealed


    Original     		PDF 512MB EBD51RC4AAFA EBD51RC4AAFA 256Mbits M01E0107 E0335E10

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-B75B/10B 128M words x 72 bits, 2 Ranks Description Features The HB54R1G9F2U is a 128M × 72 × 2 rank Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of 256Mbits DDR SDRAM sealed in TCP package, 1


    Original     		PDF HB54R1G9F2U-B75B/10B HB54R1G9F2U 256Mbits M01E0107 E0192H40

    Untitled

    Abstract: No abstract text available
    Text: TC59LM814/06CTG-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CTG are Network


    Original     		PDF TC59LM814/06CTG-50 256Mbits 304-WORDS 16-BITS 608-WORDS TC59LM814/06CTG TC59LM814CTG TC59LM806CTG

    TC59LM806CFT

    Abstract: TC59LM814CFT
    Text: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network


    Original     		PDF TC59LM814/06CFT-50 256Mbits 304-WORDS 16-BITS 608-WORDS TC59LM814/06CFT TC59LM814CFT TC59LM806CFT

    TC59LM806CFT

    Abstract: TC59LM814CFT
    Text: TC59LM814/06CFT-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network


    Original     		PDF TC59LM814/06CFT-50 256Mbits 304-WORDS 16-BITS 608-WORDS TC59LM814/06CFT TC59LM814CFT TC59LM806CFT

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Description Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1


    Original     		PDF 512MB HB54A5129F1-B75B/10B HB54A5129F1 256Mbits M01E0107 E0090H50

    HB54A5129F1

    Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


    Original     		PDF 512MB HB54A5129F1-A75B/B75B/10B HB54A5129F1 256Mbits HM5425401BTT) M01E0107 E0090H40 HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


    Original     		PDF 512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) M01E0107 E0191H20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Description Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits


    Original     		PDF 128MB HB54A1288KM HB54A1288KM 256Mbits HM5425161BTT) 200-pin M01E0107 E0190H10

    78 MOS

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in


    Original     		PDF HB54R1G9F2U-A75B/B75B/10B HB54R1G9F2U 256Mbits HM5425401BTB) M01E0107 E0192H10 78 MOS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-B75B/10B 128M words x 72 bits, 2 Ranks Description Features The HB54R1G9F2 is a 128M × 72 × 2 rank Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of 256Mbits DDR SDRAM sealed in TCP package, 1


    Original     		PDF HB54R1G9F2-B75B/10B HB54R1G9F2 256Mbits M01E0107 E0089H50

    HB54A5129F1

    Abstract: HB54A5129F1-10B HB54A5129F1-B75B
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver


    Original     		PDF 512MB HB54A5129F1-B75B/10B HB54A5129F1 256Mbits M01E0107 E0090H60 HB54A5129F1-10B HB54A5129F1-B75B

    BI 170-1-2

    Abstract: lalb RDAB 31 UVW generator TC59LM806CFTI TC59LM814CFTI
    Text: TC59LM814/06CFTI-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 I-version − 8,388,608-WORDS x 4 BANKS ×8-BITS − 4,194,304-WORDS × 4 BANKS ×16-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFTI are Network


    Original     		PDF TC59LM814/06CFTI-60 256Mbits 608-WORDS 304-WORDS 16-BITS TC59LM814/06CFTI TC59LM814CFTI TC59LM806CFTI BI 170-1-2 lalb RDAB 31 UVW generator

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2 is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in


    Original     		PDF HB54R1G9F2-A75B/B75B/10B HB54R1G9F2 256Mbits HM5425401BTB) M01E0107 E0089H30