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    23C100 Search Results

    23C100 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    NTHBR23C1001SR Amphenol Communications Solutions NETbridge+ 2x3 Right Angle Unseal C code ,100MΩ resistance insulation,3A,Surface Mount termination. Visit Amphenol Communications Solutions
    NTHBR23C1000SR Amphenol Communications Solutions NETbridge+ 2x3 Right Angle Seal C code ,100MΩ resistance insulation,3A,Surface Mount termination. Visit Amphenol Communications Solutions
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    23C100 Price and Stock

    KEMET Corporation C323C100KAG5TA

    CAP CER RAD 10PF 250V C0G 10%
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    DigiKey C323C100KAG5TA Bulk 1,739 1
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    Mouser Electronics C323C100KAG5TA 397
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    Grayhill Inc 23C1008-2

    NUT 5/16-32,BR NI 437 094
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    Grayhill Inc 23C1008-1

    HARDWARE JAM NUT 39 SERIES
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    KEMET Corporation C323C100J3G5TA

    CAP CER 10PF 25V C0G/NP0 RADIAL
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    Mouser Electronics C323C100J3G5TA
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    KEMET Corporation C323C100K3G5TA

    CAP CER RAD 10PF 25V C0G 10%
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    23C100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


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    PDF MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000

    23c1000

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON ^7# M [R!©IIL[I STr[KS©[MDËS M 23C 1000 1024K (128K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CM O S” CONSUMPTION : _ Operating current 40 mA Max. _ Stand by current 20 |iA Max.


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    PDF 1024K PDIP-28 23C1000 M23C1000B1 PDIP28 28-PIN

    circuit diagrams retu 3.02

    Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
    Text: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is


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    PDF VMIVME-DR11W-A VMEbus-T0-DR11W VMIC60 000009D8 00000A8C DR11WA 00126C 00127C FF00FF00 00128C circuit diagrams retu 3.02 APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 KM41C4000C-7 KM41C4000C-8 KM41C4000C-5


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    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    Untitled

    Abstract: No abstract text available
    Text: I V D C I M X23C1 0 0 0 / M X 2 3 C 1 0 1 0 C 1 M-BIT 1 28K x 8 CMOS MASK ROM FEATURES • Operating current: 40mA • Standby current: 1OOjiA • Package type: - 28 pin plastic DIP/SOP - 32 pin plastic DIP/SOP/PLCC/TSOP 131,072 x 8 organization Single +5V power supply


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    PDF MX23C1 000/M X23C1010 120/150/200ns MX23C1000/1010 120/150/200ns X23C1000 MC1010M X23C1000PC-20 X23C1010PC-20

    23C1001

    Abstract: No abstract text available
    Text: 23C1001/1011 CMOS MASK ROM 1M-Bit 128K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 23C1001: 28 pin DIP (Polarity programmable output enable pin) • KM23C1011: 32-pin DIP (Polarity programmable output enable pin) • 131,072 x 8 bit organization


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    PDF KM23C1001/1011 KM23C1001: KM23C1011: 32-pin 120ns KM23C1001/1011 KM23C1001) KM23C1011) 23C1001

    23C1000

    Abstract: No abstract text available
    Text: IVI .41. M X 23 C 1O O Q /M X 2 3 C 1Q 10 MACRONIX, INC. 1 M - B I T I 'I 2 8 K x 8 ] C M O S IN /IA S K R O M FEATURES • • • • • Operating current: 40mA Standby current: 100^A Package type: - 28 pin plastic DIP - 32 pin plastic DIP/SOP/PLCC 131,072 x 8 organization


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    PDF 120/150/200ns MX23C1000/1010 120/150/200ns 10OiuA. MX23C1010PC-12 MX23C1010PC-15 MX23C1000MC-12 MX23C1000MC-15 MX23C1010MC-12 MX23C101OMC-15 23C1000

    23c1000

    Abstract: 0403A1 MX23C1000 23C100 MX23C1000MC12
    Text: MX23C1OCJO/IVIX23C1 CMO 1 M a r n i 28K x 81 CMOS MASK ROM FEATURES • • • • • Operating current: 40mA Standby current: 10OuA Package type: - 28 pin plastic DIP/SOP - 32 pin plastic DIP/SOP/PLCC/TSOP 131,072 x 8 organization Single +5V power supply


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    PDF MX23C1OCJO/IVIX23C1 120/150/200ns 10OuA MX23C1000/1010 10OfiA. MX23C1000 MX23C1010 1000MC-15 23c1000 0403A1 23C100 MX23C1000MC12

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    23c1000

    Abstract: KM23C1010 KM23C1000-20 mask rom KM23C1010G
    Text: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 ODlbTH? b04 b7E D CMOS MASK ROM KM23C 1000/1010 G/J 1M-Bit (128K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072 X 8 bit organization • Fast access tim e: 120ns(max). • Supply voltage: single+5V • Current consumption


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    PDF 120ns 50juA 28-pin, 600mil, 32-pin, 525mil, KM23C1000/1010 23c1000 KM23C1010 KM23C1000-20 mask rom KM23C1010G