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    223 TRANSISTOR Search Results

    223 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    223 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet LEADFRAME SOT-223 Test Services ● Program generation/conversion ● Wafer probe ● Burn-in ● -55°C to +165°C test available ● Strip test available Small Outline Transistor SOT-223 SOT-223 is a leadframe based, plastic encapsulated package


    Original     		PDF OT-223 OT-223) OT-223 DS582B

    4512c

    Abstract: No abstract text available
    Text: BSP 223 Preliminary data SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2.1 . 4.0 V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 223 600 V 0.38 A 5Ω SOT-223 BSP 223 Pin 4 S D Electrical Characteristics, at Tj = 25°C, unless otherwise specified


    Original     		PDF OT-223 4512c

    transistor

    Abstract: transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223
    Text: Small Outline Transistor SOT-23, SOT-223, Super-SOT 3 Lead Molded SOT-23, High Profile NS Package Number M03A 2000 National Semiconductor Corporation MS101169 www.national.com Small Outline Transistor (SOT-23, SOT-223, Super-SOT) May 1999 Small Outline Transistor (SOT-23, SOT-223, Super-SOT)


    Original     		PDF OT-23, OT-223, MS101169 transistor transistor SOT 23 JAPAN transistor MA05C transistor sot NS Package Number MA03B MA03B 223 transistor Supersot 6 SOT-223

    30V-8A

    Abstract: CET453N 8a 817 voltage 67A SOT 23 6
    Text: CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D S D 8 S D SOT-223 S G G SOT-223 (J23Z)


    Original     		PDF CET453N OT-223 OT-223 30V-8A CET453N 8a 817 voltage 67A SOT 23 6

    CET3055L

    Abstract: No abstract text available
    Text: CET3055L March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 60V , 3.7A , RDS ON =100mΩ @VGS=10V. RDS(ON)=120mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. G SOT-223 Package. D S D 8 S D S G G SOT-223 SOT-223 (J23Z)


    Original     		PDF CET3055L OT-223 OT-223 CET3055L

    CET451AN

    Abstract: No abstract text available
    Text: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)


    Original     		PDF CET451AN OT-223 OT-223 CET451AN

    CET3055

    Abstract: No abstract text available
    Text: CET3055 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 60V , 4A , RDS ON =100mΩ @VGS=10V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D 8 S D S D S G G SOT-223 SOT-223 (J23Z) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)


    Original     		PDF CET3055 OT-223 OT-223 CET3055

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 SOT-223 TRANSISTOR NPN FEATURES • High breakdown voltage ·Low collector-emitter saturation voltage 1. BASE ·Complementary type: PZTA92(PNP) 2. COLLECTOR


    Original     		PDF OT-223 PZTA42 OT-223 PZTA92 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP54,55,56 SOT-223 TRANSISTOR NPN FEATURES Power amplifier applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted BCP54 BCP55


    Original     		PDF OT-223 BCP54 OT-223 BCP54 BCP55 BCP56 -65to

    PZTA42

    Abstract: PZTA92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 SOT-223 TRANSISTOR NPN FEATURES 1 • High breakdown voltage 1. BASE ·Low collector-emitter saturation voltage 2. COLLECTOR ·Complementary type: PZTA92(PNP)


    Original     		PDF OT-223 PZTA42 OT-223 PZTA92 100MHz PZTA42

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZT4401 TRANSISTOR NPN FEATURES    1. BASE Low Voltage and High Current Complementary to PZT4403 Linear Amplifier and Switch Applications 2. COLLECTOR


    Original     		PDF OT-223 OT-223 PZT4401 PZT4403 150mA 150mA 500mA 100MHz

    CHT31CZGP

    Abstract: cht31
    Text: CHENMKO ENTERPRISE CO.,LTD CHT31CZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 100 Volts CURRENT 3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT31CZGP SC-73/SOT-223 375mA 500mA; CHT31CZGP cht31

    CHTA42ZGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHTA42ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHTA42ZGP SC-73/SOT-223 100MHz CHTA42ZGP

    CHT127ZGP

    Abstract: cht12
    Text: CHENMKO ENTERPRISE CO.,LTD CHT127ZGP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 100 Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT127ZGP SC-73/SOT-223 CHT127ZGP cht12

    CHT5401ZGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT5401ZGP SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT5401ZGP SC-73/SOT-223 -10mA; CHT5401ZGP

    CHT2222ZGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222ZGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-73/SOT-223 * Small flat package. SC-73/SOT-223


    Original     		PDF CHT2222ZGP SC-73/SOT-223 600mA) 200ns CHT2222ZGP

    SC-73

    Abstract: 150 ampere npn transistor sc73 iec60134
    Text: CHENMKO ENTERPRISE CO.,LTD CHT3055ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 60 Volts CURRENT 6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT3055ZPT SC-73/SOT-223 400mA 500mA; SC-73 150 ampere npn transistor sc73 iec60134

    SC-73

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT5338ZPT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 100 Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-73/SOT-223 * Small flat package. SC-73/SOT-223


    Original     		PDF CHT5338ZPT SC-73/SOT-223 200mA SC-73

    SC-73

    Abstract: CHT31CZPT
    Text: CHENMKO ENTERPRISE CO.,LTD CHT31CZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 100 Volts CURRENT 3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT31CZPT SC-73/SOT-223 375mA 500mA; SC-73 CHT31CZPT

    1N916

    Abstract: C3001-0
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904ZPT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-73/SOT-223 * Small flat package. SC-73/SOT-223


    Original     		PDF CH3904ZPT SC-73/SOT-223 200mA) 1N916 1N916 C3001-0

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 SOT-223 TRANSISTOR NPN FEATURES ∙ High breakdown voltage 1. BASE 2. COLLECTOR ∙Low collector-emitter saturation voltage 3. EMITTER ∙Complementary type:PZTA92(PNP)


    Original     		PDF OT-223 PZTA42 OT-223 PZTA92 Test00 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP69 TRANSISTOR PNP SOT-223 FEATURES  High Current and Low Voltage  NPN Complement:BCP68 APPLICATIONS  General Purpose Switching and Amplification  1. BASE


    Original     		PDF OT-223 BCP69 OT-223 BCP68 -10mA -100mA -10mA, 100MHz BCP69-16 BCP69-25

    CZT122

    Abstract: CZT127
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR PNP FEATURES 1 z Complementary to CZT122 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE


    Original     		PDF OT-223 CZT127 OT-223 CZT122 -30mA -100V -12mA -20mA CZT122 CZT127

    e3250

    Abstract: CET3055
    Text: CET3055 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D • 6 0 V , 4 A , Rds on =1 OOmQ @Vgs=1 OV. • High dense cell design for low Rds(on). • Rugged and reliable. • SOT-223 Package. SOT-223 SOT-223 (J23Z) ABSOLUTE MAXIMUM RATINGS 0^=25% unless otherwise noted)


    OCR Scan     		PDF CET3055 OT-223 OT-223 e3250 CET3055