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    ITT Interconnect Solutions CLAMP HR-20 (TYPE A)

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    Avnet Americas CLAMP HR-20 (TYPE A) Bulk 37 Weeks 25
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    Newark CLAMP HR-20 (TYPE A) Bulk 25
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    • 1000 $111.72
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    ITT Interconnect Solutions E/B ASSY KJF20 TYPE F

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    Avnet Americas E/B ASSY KJF20 TYPE F Bulk 37 Weeks 50
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    Newark E/B ASSY KJF20 TYPE F Bulk 50
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    ITT Interconnect Solutions E/B HR-20 TYPE A (1000)

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    Avnet Americas E/B HR-20 TYPE A (1000) Bulk 19 Weeks 25
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    Newark E/B HR-20 TYPE A (1000) Bulk 25
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    ITT Interconnect Solutions E/B-HR-20-TYPE-A-(1000)

    E/b HR-20 Type A (1000); Mil-dtl 5015 Firewall; Ci
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    Master Electronics E/B-HR-20-TYPE-A-(1000)
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    ITT Interconnect Solutions E/B-ASSY-KJF20-TYPE-F

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    Master Electronics E/B-ASSY-KJF20-TYPE-F
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    20TYP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1725

    Abstract: 2SC4511 FM20 2sa1725 transistor
    Text: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C


    Original     		PDF 2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 2sa1725 transistor

    2SC4466

    Abstract: 2SA1693
    Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		PDF 2SC4466 2SA1693) 10max 80min 50min 20typ 110typ to100) to140) 2SC4466 2SA1693

    2SA1908

    Abstract: 2SC5100 DSA0016505
    Text: 2SA1908 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5100 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz


    Original     		PDF 2SA1908 2SC5100) FM100 10max 120min 50min 20typ 300typ 2SA1908 2SC5100 DSA0016505

    2SA1725

    Abstract: 2SC4511 FM20 DSA0016504
    Text: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C


    Original     		PDF 2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 DSA0016504

    2SC4468

    Abstract: 2SA1695 DSA0016510
    Text: 2SC4468 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1695 10max µA V IEBO VEB=6V 10max µA V V(BR)CEO 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		PDF 2SC4468 2SA1695) MT-100 10max 140min 50min 20typ 250typ to100) 2SC4468 2SA1695 DSA0016510

    2SC5099

    Abstract: 2SA1907 DSA0016511
    Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		PDF 2SC5099 2SA1907) FM100 10max 80min 50min 20typ 110typ 2SC5099 2SA1907 DSA0016511

    2SC4511

    Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
    Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		PDF 2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 TRANSISTOR C-111 2SA1725 FM20 DSA0016510

    2SA1907

    Abstract: 2SC5099
    Text: 2SA1907 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5099 –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz


    Original     		PDF 2SA1907 2SC5099) 10max 80min 50min 20typ 150typ 18typ 10typ 21typ 2SA1907 2SC5099

    2SA1907

    Abstract: 2SC5099
    Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		PDF 2SC5099 2SA1907) FM100 10max 80min 50min 20typ 2SA1907 2SC5099

    2SA1908

    Abstract: 2SC5100
    Text: 2SA1908 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5100 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz


    Original     		PDF 2SA1908 2SC5100) FM100 10max 120min 50min 20typ 300typ 2SA1908 2SC5100

    2SC4466

    Abstract: 2sa1693
    Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		PDF 2SC4466 2SA1693) 10max 80min 50min 20typ 110typ to100) to140) 2SC4466 2sa1693

    2SD2141

    Abstract: No abstract text available
    Text: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)


    Original     		PDF 2SD2141 10max 20max 1500min 20typ 95typ 2SD2141

    2SA1907

    Abstract: 2SC5099 DSA0016504
    Text: 2SA1907 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5099 –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz


    Original     		PDF 2SA1907 2SC5099) 10max 80min 50min 20typ 150typ 18typ 10typ 21typ 2SA1907 2SC5099 DSA0016504

    30typ

    Abstract: No abstract text available
    Text: JXWBHP-MM93PG-40 0.5~18GHz Mixer Test report is for reference only. TEST REPORT for JXWBHP-MM93PG-40 Page 1 JXWBHP-MM93PG-40 0.5~18GHz Mixer Technical Specification 0.5-18 RF/LO GHz DC-150 IF(MHz) +7 LO Power(dBm) 8.0 Typ.,11.0 max Conversion Loss(dB) 12 min,20Typ.(0.5-1.0GHz)


    Original     		PDF JXWBHP-MM93PG-40 18GHz DC-150 20Typ. 30Typ. 12Typ. 31Typ. 30typ

    2SA1695

    Abstract: 2SC4468 DSA0016504
    Text: 2SA1695 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4468 –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ


    Original     		PDF 2SA1695 2SC4468) MT-100 10max 140min 50min 20typ 400typ 2SA1695 2SC4468 DSA0016504

    2SC4511

    Abstract: 2SA1725 FM20
    Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		PDF 2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 2SA1725 FM20

    PBA150F-24

    Abstract: PBA150F PBA150F-12 PBA150F-15 PBA150F-36 PBA150F-3R3 PBA150F-48 PBA150F-5 PBA150F-9 3R3 99
    Text: Ordering information Unit type PBA150F PBA 150 1 2 F 3 -5 4 -O 5 1Series name 2 Output wattage 3 Universal input 4 Output voltage 5 Optional C :with Coating G :Low leakage current 0.15mA max / ACIN 240V E :Low leakage current and EMI class A (0.5mA max / ACIN 240V)


    Original     		PDF PBA150F UL508 PBA150F-3R3 PBA150F-5 PBA150F-9 PBA150F-12 Part15 CISPR22-B, EN55011-B, EN55022-B PBA150F-24 PBA150F PBA150F-12 PBA150F-15 PBA150F-36 PBA150F-48 PBA150F-5 PBA150F-9 3R3 99

    LEP150F

    Abstract: LEP150F-24 LEP150F-36 LEP150F-48 NAC-06-472 BVH-21T LEP150F36
    Text: Ordering information Rugged PCB type LEP150F LEP 150 1 2 F 3 -24 4 Recommended Noise Filter NAC-06-472 R High voltage pulse noise type : NAP series Low leakage current type : NAM series *The Noise Filter is recommended *to connect with several devices. MODEL


    Original     		PDF LEP150F NAC-06-472 LEP150F-24 LEP150F-36 LEP150F-48 factor100% D-63069 LEP150F LEP150F-24 LEP150F-36 LEP150F-48 NAC-06-472 BVH-21T LEP150F36

    NAC-06-472

    Abstract: No abstract text available
    Text: Ordering information Unit type PAA100F PAA PAA 100 1 2 F 3 -5 5 Recommended Noise Filter NAC-06-472 R -O 4 High voltage pulse noise type : NAP series Low leakage current type : NAM series 1Series name 2Output wattage 3Universal input 4Output voltage 5Optional


    Original     		PDF PAA100F NAC-06-472 PAA100F-3 PAA100F-5 PAA100F-12 PAA100F-15 PAA100F-24 PAA100F-48 AA100F-5) PAA100F-5) NAC-06-472

    lca30s24

    Abstract: LCA100S-5 LCA15S-5 LCA15S5 LCA30S-12 LCA-15 LCA-13 LCA75S-5
    Text: Ordering information AC-DC Power Supplies Open Frame/Enclosed type LCA10S LC 1 A 2 10 3 S 4 Recommended EMI/EMC Filter NAC-06-472 R High voltage pulse noise type : NAP series Low leakage current type : NAM series -5 5 -O 6 1Series name 2100/120V input 3Output wattage


    Original     		PDF LCA10S NAC-06-472 100/120V LCA10S-5 LCA10S-5-H LCA10S-12 LCA10S-15 LCA10S-24 20MHz RM101) lca30s24 LCA100S-5 LCA15S-5 LCA15S5 LCA30S-12 LCA-15 LCA-13 LCA75S-5

    VAA1012

    Abstract: capacitor .22mf DC110 VAA505 VAA512 G156
    Text: Ordering information On-board type VAA5 VAA 1 5 2 05 3 1Series name 2Output wattage 3Output voltage R MODEL MAX OUTPUT WATTAGE[W] DC OUTPUT VAA505 5.0 VOLTAGE[V] 5 CURRENT[A] 1.0 VAA512 5.4 12 0.45 SPECIFICATIONS INPUT OUTPUT VAA PROTECTION CIRCUIT ISOLATION


    Original     		PDF VAA505 VAA512 VAA1012) AC132V 20ms/DIV ACIN85 ACIN116 VAA1012 capacitor .22mf DC110 VAA505 VAA512 G156

    TQFP120

    Abstract: No abstract text available
    Text: P-TBFPlgQ-1414-0,40D Uniti nn 16. 0±0. E 14. 0±0. 2 ISO 91 25002253010001000102010001020100 =90 o 30= =61 60 1. 20TYP 0. 18±0. OS nrri '< W IQ . 0 7 M I . U -SU Jul.2003


    OCR Scan     		PDF TQFP120â 20TYP 2003Pâ TQFP120

    208H

    Abstract: RLXF0710
    Text: 1. M echanical D im ensions: 2. Sch em atic: 3. E lectrical Specification s: Inductance: 150uH±10% 1KHz 0.1V Idc: 280mAdc J Du DC Resistance: 0.500 Ohms Max SRF: 3.5MHz Typ 3.0±.50 Q: 20Typ @796KHz Notes: 1. Solderability: Leads shall meet M IL-STD-202G,


    OCR Scan     		PDF MIL-STD-202G, UL94V-0 E151556 150uHÂ 280mAdc 20Typ 796KHz 208H RLXF0710

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241