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    C-Ton Industries DLA20-LM-B-1

    VOLTMETER PANEL MOUNT
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    DigiKey DLA20-LM-B-1 Bulk 1
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    Teledyne e2v CY7C433-20LMB

    FIFO MEMORY, 4K X 9, 20 NS ACCESS TIME - Rail/Tube (Alt: CY7C433-20LMB)
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    Avnet Americas CY7C433-20LMB Tube 250
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    Teledyne e2v CY7C429-20LMB

    FIFO MEMORY, 2K X 9, 20 NS ACCESS TIME - Rail/Tube (Alt: CY7C429-20LMB)
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    Avnet Americas CY7C429-20LMB Tube 250
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    Teledyne e2v PALC16R8-20LMB

    PROG. LOGIC DEVICE, 16-INPUT 8-OUTPUT AN - Rail/Tube (Alt: PALC16R8-20LMB)
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    Teledyne e2v PALC16R6-20LMB

    PROG. LOGIC DEVICE, 16-INPUT 8-OUTPUT AN - Rail/Tube (Alt: PALC16R6-20LMB)
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    Avnet Americas PALC16R6-20LMB Tube 250
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    Find more 20LMB price and stock on Findchips.com

    20LMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FT7C185A-20LMB 8K X 8 CMOS SRAM Features Description ◆ High-speed address/chip select access time Mil:20/25/35/45/55/70/85/100 Max MB=Mil-Std-883 Method 5004 ◆ Low power consumption Produced with advanced CMOS high-performance technology Inputs and outputs directly TTL-compatible


    Original     		PDF FT7C185A-20LMB Mil-Std-883 28-pin FT7C185

    20LMB

    Abstract: No abstract text available
    Text: SCD#QM5259 Upscreening/Manufacturing Specification FT7C109-20LMB Title Page . List of Effective Pages . Change List .


    Original     		PDF QM5259 FT7C109-20LMB 20LMB

    CY7C187

    Abstract: CY7C187A
    Text: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power


    Original     		PDF CY7C187A CY7C187A CY7C187

    CY7C128A

    Abstract: transistor C128 C128A 7C128A-45 7C128A-25
    Text: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power


    Original     		PDF CY7C128A CY7C128A transistor C128 C128A 7C128A-45 7C128A-25

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C150

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


    Original     		PDF P4C150 24-Pin 28-Pin P4C150 096-bit requires300 SRAM105

    P4C147

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


    Original     		PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    CY7C185A-20LMB

    Abstract: C185A CY7C185 CY7C185A 624a2
    Text: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features


    Original     		PDF CY7C185A CY7C185A 300-mil-wide CY7C185A-20LMB C185A CY7C185 624a2

    Untitled

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


    Original     		PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    Untitled

    Abstract: No abstract text available
    Text: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 12/15/20/25 ns (Commercial) – 20/25/35ns (Military) Standard Pinout (JEDEC Approved)


    Original     		PDF P4C1681, P4C1682 20/25/35ns 24-Pin 28-Pin P4C1681 P4C1682

    K73 Package

    Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
    Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when


    OCR Scan     		PDF CY7C164A CY7C166A 384x4 CY7C166A 35DMB CY7C166Aâ 35KMB CY7C166A-35LMB K73 Package 3 phase inverter schematic diagram 7C166 CI64A CY7C164A-45DMB

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    c46cm

    Abstract: CY7C460 CY7C462 CY7C464 IDT7205 IDT7206
    Text: CY7C460 CY7C462 CY7C464 m .W C Y P R E S S C ascadable 8 K x 9 F I F O C ascadable 16K x 9 FIFO C ascadable 3 2 K x 9 FIFO Features • • • • • • • • • • • • • • • data outputs go to the high-impedance Functional Description state when R is H IG H .


    OCR Scan     		PDF CY7C460 CY7C462 CY7C464 CY7C460) CY7C462) CY7C464) 600-mil IDT7205, IDT7206 CY7C460, c46cm CY7C464 IDT7205 IDT7206

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    16L88

    Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
    Text: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military


    OCR Scan     		PDF PALC16R8L-35VC PALC16R8L-35WC PALC16R8â PALC16R8-35PC/PI PALC16R8-35VC/VC PALC16R8-35WCAVC PALC16R8-40DMB PALC16R8-40KMB PALC16R8-40LMB PALC16R8-40QMB 16L88 PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB

    CY7C197

    Abstract: CV7C197
    Text: MbE D n " T CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20ns Low active power — 880 mW Low standlgr power — 220 mW TlX-compatible imputs and outputs Capable ofwithstanding greater than


    OCR Scan     		PDF CY7C197 2001Velectrostatic CY7C197 CY7C197-45LC CY7C197-45PC CY7C197-45VC CY7C197-45DMB CY7C197-45KMB CY7C197-45LMB CV7C197

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    automaticpower change over switch circuit diagram

    Abstract: CY7C185 CY7C185A
    Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185A CY7C185A 300-miMilitary CY7C185Aâ 25LMB 28-Pin 35DMB 28-Lead automaticpower change over switch circuit diagram CY7C185

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B195 CY7B196 CY7B194, 7B195,

    Untitled

    Abstract: No abstract text available
    Text: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs


    OCR Scan     		PDF CY7C451 CY7C453 CY7C451) CY7C453) 70-MHz 50-MHz 300-mil 32-pin DD15475

    Untitled

    Abstract: No abstract text available
    Text: CY7C171A CY7C172A r^ y p p p cc Features F unctional D escription • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power


    OCR Scan     		PDF CY7C171A CY7C172A 7C171A) 7C171A 7C172A tADvI13)

    Untitled

    Abstract: No abstract text available
    Text: CY7B180 CY7B181 PRELIMINARY CYPRESS SEMICONDUCTOR Features 4K x 18 Cache Tag • Can be used as 4K x 18 SRAM Functional Description Supports 50-MHz cache for all major high-speed processors 4K x 18 tag organization BiCMOS for optimum speed/power High speed


    OCR Scan     		PDF CY7B180 CY7B181 50-MHz 12-ns 15-ns CY7B180) CY7B181) CY7B181â CY7B180â

    Untitled

    Abstract: No abstract text available
    Text: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided


    OCR Scan     		PDF CY7B191 CY7B192 CY7B191 CY7B192 7B191) 7B191