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    20DMB Search Results

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    54H20DM/B Rochester Electronics LLC 54H20DM/B Visit Rochester Electronics LLC Buy
    9020DM/B Rochester Electronics LLC 9020 - FF/Latch Visit Rochester Electronics LLC Buy
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    20DMB Price and Stock

    Rochester Electronics LLC 9020DM-B

    9020DM/B
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    DigiKey 9020DM-B Bulk 4
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    Rochester Electronics LLC 54H20DM-B

    54H20DM/B
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    Vishay Dale RNC50H4320DMB14

    RES 432 OHM 1/10W .5% AXIAL
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    Vishay Dale RWR80S4220DMB12

    RES 422 OHM 2W 0.5% WW AXIAL
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    Vishay Dale RNC70H3920DMB14

    RES 392 OHM 0.5% 3/4W AXIAL
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    20DMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C187

    Abstract: CY7C187A
    Text: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power


    Original     		PDF CY7C187A CY7C187A CY7C187

    CY7C128A

    Abstract: transistor C128 C128A 7C128A-45 7C128A-25
    Text: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power


    Original     		PDF CY7C128A CY7C128A transistor C128 C128A 7C128A-45 7C128A-25

    C167A-3

    Abstract: C167A-2 CY7C167A CY7C167A-35DMB cy7c167a-35pc
    Text: CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    Original     		PDF CY7C167A CY7C167A 20-Lead C167A-3 C167A-2 CY7C167A-35DMB cy7c167a-35pc

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		PDF CY7C197 256Kx1 CY7C197

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C150

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


    Original     		PDF P4C150 24-Pin 28-Pin P4C150 096-bit requires300 SRAM105

    P4C147

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


    Original     		PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    C167A

    Abstract: C167A-2 C167A-3 CY7C167A CY7C167A-35VC
    Text: 1CY 7C16 7A CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    Original     		PDF CY7C167A CY7C167A C167A C167A-2 C167A-3 CY7C167A-35VC

    CY7C185A-20LMB

    Abstract: C185A CY7C185 CY7C185A 624a2
    Text: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features


    Original     		PDF CY7C185A CY7C185A 300-mil-wide CY7C185A-20LMB C185A CY7C185 624a2

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    c46cm

    Abstract: CY7C460 CY7C462 CY7C464 IDT7205 IDT7206
    Text: CY7C460 CY7C462 CY7C464 m .W C Y P R E S S C ascadable 8 K x 9 F I F O C ascadable 16K x 9 FIFO C ascadable 3 2 K x 9 FIFO Features • • • • • • • • • • • • • • • data outputs go to the high-impedance Functional Description state when R is H IG H .


    OCR Scan     		PDF CY7C460 CY7C462 CY7C464 CY7C460) CY7C462) CY7C464) 600-mil IDT7205, IDT7206 CY7C460, c46cm CY7C464 IDT7205 IDT7206

    CY7C101A

    Abstract: CY7C102A 7C101A-12 l3lx
    Text: PRELIMINARY 9 / C Y PR E SS CY7C101A CY7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101A and CY7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­


    OCR Scan     		PDF CY7C101A CY7C102A 7C101A) CY7C102A CY7C101A tdwel161 7C101A 8-00231-A 7C101A-12 l3lx

    1S26

    Abstract: P4C116 P4C116L AD5e
    Text: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)


    OCR Scan     		PDF P4C116/P4C116L 7Db25R7 P4C116L Technology11' 24-Pin P4C116/L P4C116L P4C116 Mil-Bul-103 -12PC 1S26 AD5e

    7C192-12

    Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­


    OCR Scan     		PDF CY7C191 CY7C192 CY7C191) CY7C192 38-00076-J tAW15! tADvI15! 7C192-12 7C192-15 A10C CY7C192-25PC

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    16L88

    Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
    Text: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military


    OCR Scan     		PDF PALC16R8L-35VC PALC16R8L-35WC PALC16R8â PALC16R8-35PC/PI PALC16R8-35VC/VC PALC16R8-35WCAVC PALC16R8-40DMB PALC16R8-40KMB PALC16R8-40LMB PALC16R8-40QMB 16L88 PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    automaticpower change over switch circuit diagram

    Abstract: CY7C185 CY7C185A
    Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185A CY7C185A 300-miMilitary CY7C185Aâ 25LMB 28-Pin 35DMB 28-Lead automaticpower change over switch circuit diagram CY7C185

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B195 CY7B196 CY7B194, 7B195,

    Untitled

    Abstract: No abstract text available
    Text: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs


    OCR Scan     		PDF CY7C451 CY7C453 CY7C451) CY7C453) 70-MHz 50-MHz 300-mil 32-pin DD15475

    Untitled

    Abstract: No abstract text available
    Text: 7S C Y P R E S S CY7C1006 p r e l im in a r y 256Kx 4 Static RAM Features Functional Description • High speed T he CY7C1006 is a high-perform ance CM OS static RA M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C1006 256Kx CY7C1006

    Untitled

    Abstract: No abstract text available
    Text: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A


    OCR Scan     		PDF 7C101A: CY7C101A CY7C102A 7C101A) CY7C101Aand CY7C102Aare in982.

    Untitled

    Abstract: No abstract text available
    Text: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided


    OCR Scan     		PDF CY7B191 CY7B192 CY7B191 CY7B192 7B191) 7B191