Untitled
Abstract: No abstract text available
Text: 2014 Vishay Intertechnology, Inc. SUPER 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 2 WSLP High-Power Surface-Mount Power Metal Strip Current Sensing Resistor TMBS® in SMPA Trench MOS Barrier Schottky Rectifiers in
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com/ref/2014s12
TCPT1350X01
TCUT1350X01
SiZ340DT
VMN-MS6834-1312
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QUAD HIFREQ
Abstract: No abstract text available
Text: 2014 Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 WSLp 2 SmpAパッケージのTmBS 3 prAhT 4 高電力表面実装型Power Metal Strip 電流検出抵抗器 薄型SMPA パッケージのTrench MOSバリア・ショットキー
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com/ref/2014s12
TCpT1350X01
TCuT1350X01
SiZ340DT
VMN-MS6882-1403
QUAD HIFREQ
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UU 126 CORE
Abstract: uu1116 UU93 uu1116s UU CORE SQ2014 uu 10.5
Text: SAMWHA ELECTRONICS SQ, SQE, UU CORES SQ17~SQ40 SQE20~SQE35 UU10~UU93 Ordering Code System SM-100 Material Core Type SQ 2014S Core Size 107 108 SAMWHA ELECTRONICS SQ, SQE CORES SQ1715S Part No. Type SQ Core Set Parameters Electrical Characteristics SQE SQ2115S
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SQE20
SQE35
SM-100
2014S
SQ1715S
SQ2014S
SQ2115S
SQ2116S
65min.
PL-11
UU 126 CORE
uu1116
UU93
uu1116s
UU CORE
SQ2014
uu 10.5
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Untitled
Abstract: No abstract text available
Text: Tecate Group Film Capacitors TYPE 2014S POLYPROPYLENE FILM & FOIL RADIAL DIP, SERIES WOUND, HV POLYPROPYLENE OPP SPECIFICATIONS Performance Characteristics Operating Temperature -25°C ~ +85°C. Range Voltage Range 1000, 1250, 1600, & 2000VDC. Capacitance Range
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2014S
2000VDC.
40000Mâ
500Vrms.
2014S
2014S-1K0/103K25F
2000WVDC
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1600WVDC
Abstract: Tecate Group
Text: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL DIP, SERIES WOUND, HV POLYPROPYLENE OPP TYPE 2014S SPECIFICATIONS Performance Characteristics Operating Temperature -25°C ~ +85°C. Range Voltage Range 1000, 1250, 1600, & 2000VDC. Capacitance Range 0.001µF ~ 0.33µF.
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2014S
2000VDC.
40000M.
500Vrms.
2014S
2014S-1K0/103K25F
25stries
2000WVDC
1600WVDC
Tecate Group
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Untitled
Abstract: No abstract text available
Text: POLYPROPYLENE FILM CAPACITORS TYPE 2014S 2014S capacitors are good for pulse and high frequency applications, with their low dissipation factor. High insulation resistance under high humidity conditions. GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -25°C to +85°C
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2014S
2014S
000MW
914-250/104K10B1/5
914-250/104K10B5/5
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Untitled
Abstract: No abstract text available
Text: POLYPROPYLENE FILM CAPACITORS TYPE 2014S 2014S capacitors are good for pulse and high frequency applications, with their low dissipation factor. High insulation resistance under high humidity conditions. GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -25°C to +85°C
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2014S
2014S
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Untitled
Abstract: No abstract text available
Text: Reference Design Manual DN[Document ID] NFCC Reference Board AS3911-QF-RD-NFCC ams Reference Design Manual, Confidential [v1-00] 2014-Sep-12 Page 1 Document Feedback NFCC Reference Board Table of Contents 1 Introduction . 4
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AS3911-QF-RD-NFCC
v1-00]
2014-Sep-12
2014-May-14)
2014-Aug-14)
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MMRF1315N
MMRF1315NR1
IS--95
7/2014Semiconductor,
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MTL ICC 317
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage
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MMZ25333B
MMZ25333B
MMZ25333BT1
6/2014Semiconductor,
MTL ICC 317
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MMRF1019NR4
Abstract: No abstract text available
Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
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MMRF1019N
MMRF1019NR4
7/2014Semiconductor,
MMRF1019NR4
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24-7S
Abstract: 2211P 2211S 2213p
Text: 151-2012:QuarkCatalogTempNew 8/20/12 1:17 PM Page 151 2 Circular Power Connectors — 97 Series TEST & MEASUREMENT MIL-C-5015 Style Types A and B See page 144 for dimension table. RoHS Non-Compliant standard finish no deviation code of olive drab chromate over cadmium
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MIL-C-5015
7-3106A
24-7S
2211P
2211S
2213p
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22-22P
Abstract: 2216S 20-27P 2215s 70-108224 70-108050
Text: 150-2012:QuarkCatalogTempNew 8/20/12 1:11 PM Page 150 TEST & MEASUREMENT 2 Circular Power Connectors — 97 Series MIL-C-5015 Style Types A and B See page 144 for dimension table. RoHS Non-Compliant standard finish no deviation code of olive drab chromate over cadmium plating. The inserts are also RoHS NonCompliant as the solder cups contain tin/lead solder. Non-Compliant assemblies are also offered with finishes of clear chromate over cadmium plating (639), black zinc (621)
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MIL-C-5015
7-3100A
20-8P
20-8S
20-11P
20-11S
20-14P
20-14S
20-15P
20-15S
22-22P
2216S
20-27P
2215s
70-108224
70-108050
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Untitled
Abstract: No abstract text available
Text: Document Number: MMZ25332B Rev. 2, 5/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier
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MMZ25332B
MMZ25332BT1
MMZ25332B
11g/n)
5/2014Semiconductor,
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TUI-lf-9
Abstract: ATC700B392JT50X
Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched
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MMRF1016H
MMRF1016HR5
7/2014Semiconductor,
TUI-lf-9
ATC700B392JT50X
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V
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MHT2000N
MHT2000NR1
MHT2000GNR1
5/2014Semiconductor,
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),
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MMRF1310H
MMRF1310HR5
MMRF1310HSR5
MMRF1310HR5
7/2014Semiconductor,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR
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MRFE6VP5300N
MRFE6VP5300NR1
MRFE6VP5300GNR1
MRFE6VP5300NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability
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AFT21S220W02S
AFT21S220W02SR3
AFT21S220W02GSR3
2/2014Semiconductor,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT21S140W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability
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AFT21S140W02S
AFT21S140W02SR3
AFT21S140W02GSR3
2/2014Semiconductor,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S7170N
MRF8S7170NR3
2/2014Semiconductor,
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8029L
Abstract: MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S
Text: ICs/LSIs for VCR, Camera • For 8mm VCR O p e ra tin g V o lta g e C a te g o ry V ideo signal p ro c e s s o r A udio signal p ro c e s s o r S erv o c o n tro l F u n c tio n s P ro c e s s T y p e N o. P ackage V N o. M N 6173S 5 CM OS C h ro m a s ig n a l p ro c e s s in g
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6173S
SO-18D
6297S
6170AS
SO-20D
28-SD
-QKH/80-QFH
SO-28D
24-SD
8029L
MN5128
607p
2254FAP
I2132
MN3861SA
AN2514S
3861SA
2154F
2514S
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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Untitled
Abstract: No abstract text available
Text: - 94 AN 2458SH PAL/NTSC^st*^'* = 7 — • ^ > 3 — ^'IC •St * A N 2 4 5 8 S H Ü , ' I ' i l - f f i H f i t i l 9 -Í V ^ P A L / N T S C t T Ä « i^i-^ 7 -ÿ — •3 - > - i —y \ c . • tK— 9 - T j v * V - T ' - t ' X S ti X • U— • ig i^ itF E : 4 .8V (typ
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