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    200V TRANSISTOR NPN 10A Search Results

    200V TRANSISTOR NPN 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    200V TRANSISTOR NPN 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2549 NTE2549

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2549 NTE2549

    200V transistor npn 2a

    Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
    Text: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A

    nte2650

    Abstract: nte2649
    Text: NTE2649 Silicon NPN Transistor Darlington Compl to NTE2650 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2649 NTE2650) nte2650 nte2649

    NTE375

    Abstract: NTE398
    Text: NTE375 Silicon NPN Transistor TV Vertical Output Compl to NTE398 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE375 NTE398) 500mA 100mA NTE375 NTE398

    NTE2578

    Abstract: No abstract text available
    Text: NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2578 400mA 500mA, NTE2578

    200V transistor npn 10a

    Abstract: 2SD1027 npn DARLINGTON 10A power Diode 200V 10A darlington Vce-200V darlington power transistor 10a HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON high current darlington transistor npn general purpose high voltage amplifier
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 1500 Min. @ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA TELEPHONE: 973 376-2922 (212)227-6005 BUY73 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 200V(Min.) • Low Collector Saturation Voltage:V C E(.at)=1.4V@l c =10A


    Original     		PDF BUY73

    2SC3857

    Abstract: 2SA1493 DSA0016508
    Text: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 •Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB


    Original     		PDF 2SC3857 2SA1493) MT-200 100max 200min 50min 20typ 250typ 2SC3857 2SA1493 DSA0016508

    transistor 2sc3858

    Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)


    Original     		PDF 2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area

    2SC3856

    Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
    Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)


    Original     		PDF 2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 2SA1492 2SA1492 2SC3856 DSA0016508

    2SC5101

    Abstract: 2SA1909 DSA0016511
    Text: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC5101 2SA1909) FM100 10max 140min 50min 20typ 250typ 2SC5101 2SA1909 DSA0016511

    2SC3858

    Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A


    Original     		PDF 2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508

    2SA1909

    Abstract: 2SC5101
    Text: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose 2SC5101 Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC5101 2SA1909) FM100 10max 140min 50min 20typ 250typ 2SA1909 2SC5101

    2SC4388

    Abstract: NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673
    Text: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4388 2SA1673) FM100 10max 180min 50min 20typ 300typ 2SC4388 NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673

    2SC4388

    Abstract: 2SA1673 33 NK 100
    Text: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 Unit V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4388 2SA1673) FM100 10max 180min 50min 20typ 300typ 2SC4388 2SA1673 33 NK 100

    2SC3856

    Abstract: transistor 2sc3856 power transistor 2sc3856 2SA1492
    Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 transistor 2sc3856 power transistor 2sc3856 2SA1492

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    BU180A

    Abstract: darlington Vce-200V NPN DARLINGTON 10A 400V NPN Transistor 10A 400V npn transistor 400V npn darlington 400v 10a darlington power transistor 10a Darlington NPN Silicon Diode darlington power transistor npn DARLINGTON 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 10A ·DC Current Gain: hFE= 200 Min @ IC= 5A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for line operated switchmode applications


    Original     		PDF BU180A 100mA BU180A darlington Vce-200V NPN DARLINGTON 10A 400V NPN Transistor 10A 400V npn transistor 400V npn darlington 400v 10a darlington power transistor 10a Darlington NPN Silicon Diode darlington power transistor npn DARLINGTON 10A

    Untitled

    Abstract: No abstract text available
    Text: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted


    Original     		PDF FJA4310 FJA4210 FJA4310

    FJA4310

    Abstract: FJA4210 SC-65 ASME-14
    Text: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted


    Original     		PDF FJA4310 FJA4210 FJA4310 FJA4210 SC-65 ASME-14

    Untitled

    Abstract: No abstract text available
    Text: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted


    Original     		PDF FJA4310 FJA4310 FJA4210

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N