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    ECS International Inc ECS-2200BX-320

    XTAL OSC XO 32.0000MHZ HCMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-2200BX-320 Bulk 1,159 1
    • 1 $3.14
    • 10 $3.14
    • 100 $3.14
    • 1000 $2.06272
    • 10000 $1.8708
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    ECS International Inc ECS-2200BX-800

    XTAL OSC XO 80.0000MHZ HCMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-2200BX-800 Bulk 1,109 1
    • 1 $3.14
    • 10 $3.14
    • 100 $3.14
    • 1000 $2.06431
    • 10000 $1.87224
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    ECS International Inc ECS-2200BX-040

    XTAL OSC XO 4.0000MHZ HCMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECS-2200BX-040 Bulk 1,001 1
    • 1 $3.04
    • 10 $3.04
    • 100 $3.04
    • 1000 $1.99806
    • 10000 $1.81213
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    Bristol Electronics ECS-2200BX-040 81
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    Master Electronics ECS-2200BX-040
    • 1 -
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    • 1000 $1.8
    • 10000 $1.8
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    Rubycon Corporation 200BXG68MEFC12.5X20

    CAP ALUM 200V POLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 200BXG68MEFC12.5X20 Bulk 1,000 1
    • 1 $1.49
    • 10 $0.949
    • 100 $0.6472
    • 1000 $0.48972
    • 10000 $0.42857
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    Rubycon Corporation 200BXG82MEFC12.5X25

    CAP ALUM 200V POLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 200BXG82MEFC12.5X25 Bulk 998 1
    • 1 $1.61
    • 10 $1.025
    • 100 $0.6993
    • 1000 $0.52915
    • 10000 $0.46308
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    Find more 200BX price and stock on Findchips.com

    200BX Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    200BXA100M16x25 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA100M18x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA10M10x16 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA10MEFC10X16 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF
    200BXA150M16x31.5 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA150M18x25 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA150MEFCCT16X31.5 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 150UF 20% 200V RADIAL Original PDF
    200BXA220M18x31.5 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA220MEFC18X31.5 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 200V RADIAL Original PDF
    200BXA22M10X16 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM RAD Original PDF
    200BXA22M10x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA33M12.5x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA33MEFCCA12.5X20 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 33UF 20% 200V RADIAL Original PDF
    200BXA47M12.5x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA47MEFC12.5X20 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 47UF 20% 200V RADIAL Original PDF
    200BXA68M12.5x25 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA68M16x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXA68MEFC12.5X25 Rubycon Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 68UF 20% 200V RADIAL Original PDF
    200BXC100M16x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original PDF
    200BXC100MEFC16X20 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 100UF 200V 20% RADIAL Original PDF

    200BX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WED3C750A8M-200BX

    Abstract: No abstract text available
    Text: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight


    Original     		PDF WED3C750A8M-200BX WED3C750A8M-200BX 750/SSRAM

    Untitled

    Abstract: No abstract text available
    Text: 200BX BOX HEADER CONNECTOR SYSTEM .079”x.079” 2.0x2.0mm pitch MATERIAL : PBT+30% GF UL 94V-0 BRASS GOLD FLASH CURRENT RATING : 1A AC,DC VOLTAGE RATING : 150V AC,DC CONTACT RESISTANCE : 20m Ÿ MAX INSULATION RESISTANCE : 100M Ÿ MIN WITHSTANDING VOLTAGE : 250V AC/MINUTE


    Original     		PDF 200BX 200BX-Vxx 200BX-Rxx

    WED3C750A8M-200BX

    Abstract: No abstract text available
    Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications


    Original     		PDF 750TM/8Mbit WED3C7508M-200BX 128Kx72 WED3C750A WED3C7558M-300BX WED3C750A8M-200BX* WEDPN8M72V-XBX* 750sbd WED3C750A8M-200BX

    Untitled

    Abstract: No abstract text available
    Text: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight


    Original     		PDF WED3C750A8M-200BX WED3C750A8M-200BX 750/SSRAM

    WED3C7508M-200BX

    Abstract: WED3C750A8M-200BX WEDPN8M72V-XBX
    Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package WED3C750A8M Product Sheet Rev. 1 5/01 Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache


    Original     		PDF 750TM/8Mbit WED3C750A8M WED3C7508M-200BX 128Kx72 25x21mm, 525mm WED3C750A 625mm2 352mm2 1329mm2 WED3C750A8M-200BX WEDPN8M72V-XBX

    C1B4

    Abstract: No abstract text available
    Text: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight


    Original     		PDF WED3C750A8M-200BX WED3C750A8M-200BX 750/SSRAM C1B4

    WED3C750A8M-200BX

    Abstract: No abstract text available
    Text: White Electronic Designs WED3C750A8M-200BX RISC Microprocessor Module OVERVIEW • Maximum L2 Cache frequency = 100MHz The WEDC 750/SSRAM module is targeted for high performance, space sensitive, low power systems and supports the following power management features:


    Original     		PDF WED3C750A8M-200BX 100MHz 750/SSRAM 66MHz WED3C750A8M-200BX

    WED3C750A8M

    Abstract: No abstract text available
    Text: WED3C750A8M-200BX RISC Microprocessor Module OVERVIEW The WEDC 750/SSRAM module is targeted for high performance, space sensitive, low power systems and supports the following power management features: doze, nap, sleep and dynamic power management. The WED3C750A8M-200BX is offered in industrial -40°C to +85°C


    Original     		PDF WED3C750A8M-200BX 750/SSRAM WED3C750A8M-200BX 128Kx72 21mmx25mm, 200MHz 100MHz 66MHz WED3C750A8M

    WED3C750A8M-200BX

    Abstract: No abstract text available
    Text: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight


    Original     		PDF WED3C750A8M-200BX WED3C750A8M-200BX 750/SSRAM

    82371FB

    Abstract: 28F002BC 82437fx 36A4
    Text: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit


    Original     		PDF 28F002BC 16-KB 96-KB 128-KB AP-610 28F002/200BX-T/B 28F004/400BX-T/B 28F002/200BV-T/B 28F004/400BV-T/B 82371FB 82437fx 36A4

    intel ab28f200 flash

    Abstract: intel ab28F200 intel 28F200 AB28F200BR-B80 AB28F200
    Text: E ADVANCE INFORMATION A28F200BR-T/B 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive n n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  5V Read Operation Very High Performance Read  80 ns Max. Access Time,


    Original     		PDF A28F200BR-T/B x8/x16-Selectable 32-bit 16-KB 96-KB 128-KB 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B intel ab28f200 flash intel ab28F200 intel 28F200 AB28F200BR-B80 AB28F200

    28F002BC

    Abstract: P28F002BC-T120 82437fx
    Text: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max. Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit


    Original     		PDF 28F002BC 16-KB 96-KB 128-KB P28F002BC-T120 82437fx

    28F800

    Abstract: 28f800 errata intel pa28f800
    Text: E PRELIMINARY 8-MBIT 512K X 16, 1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  2.7V, 3.3V or 5V Read Operation


    Original     		PDF 1024K 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B x8/x16-Selectable 28F800 32-bit 28F002/400BX-T/B 28f800 errata intel pa28f800

    T28F400

    Abstract: intel 28F400bx E28F400BX-B60 interfacing of memory devices with 80286 microprocessor 80286 internal architecture 28F004BX-B 28F004BX-T 28F400BX-B 28F400BX-T E28F400BX-T60
    Text: 4-MBIT 256K X 16 512K X 8 BOOT BLOCK FLASH MEMORY FAMILY 28F400BX-T B 28F004BX-T B Y x8 x16 Input Output Architecture 28F400BX-T 28F400BX-B For High Performance and High Integration 16-bit and 32-bit CPUs Y Very High-Performance Read 60 80 120 ns Maximum Access Time


    Original     		PDF 28F400BX-T 28F004BX-T 28F400BX-B 16-bit 32-bit 28F004BX-B 28F400BX-120 28F004BX-120 T28F400 intel 28F400bx E28F400BX-B60 interfacing of memory devices with 80286 microprocessor 80286 internal architecture 28F004BX-B 28F400BX-B E28F400BX-T60

    Untitled

    Abstract: No abstract text available
    Text: o M F O T E M in ] « ] A28F200BR-T/B 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time,


    OCR Scan     		PDF A28F200BR-T/B x8/x16-Selectable 32-bit AB-57 AP-363 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B Q15bbb4

    Untitled

    Abstract: No abstract text available
    Text: A O m r c i ! O M F O K fifflÄ T T O O K I in te l A28F200BR-T/B 2-MBIT 128K x 1 6 ,256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation Very High Performance Read


    OCR Scan     		PDF A28F200BR-T/B x8/x16-Selectable 32-bit AB28F200BR-B80 AP-363 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B AB-57

    intel e28f

    Abstract: 28f400 BYTE PROGRAM
    Text: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at


    OCR Scan     		PDF 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B AP-604 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B AP-363 intel e28f 28f400 BYTE PROGRAM

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time


    OCR Scan     		PDF 28F200B5, 28F400B5, 28F800B5 x8/x16-Configurable 4fl2bl75 D174733 28F002/200BX-T/B 28F002/200BL-T/B 28F002/400BL-T/B 28F002/400BX-T/B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit


    OCR Scan     		PDF 28F002BC 16-KB 96-KB 128-KB AP-610 28F002/200BX-T/B 28F004/400BX-T/B 28F002/200BV-T/B 28F004/400BV-T/B 4fl2bl75

    3165* intel

    Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
    Text: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 200BX-T, 200BX-B


    OCR Scan     		PDF 46Ebl7b QQ7b353 28F200BX-T/B, 28F002BX-T/B x8/x16 28F200BX-T, 28F200BX-B 16-bit 32-bit 28F002BX-T 3165* intel 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F200BX

    29053

    Abstract: No abstract text available
    Text: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation


    OCR Scan     		PDF 1024K 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B 28F004/400BX-T/B AP-604 AP-617 AB-57 29053

    Untitled

    Abstract: No abstract text available
    Text: 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B , 28F 002B L-T/B • SRAM-Compatible Write Interface ■ Low Voltage Operation for Very Low Power Portable Applications — VCc - 3.0V-3.6V ■ Automatic Power Savings Feature


    OCR Scan     		PDF 28F200BL-T/B x8/x16 28F200BL-T, 28F200BL-B 16-bit 32-bit 28F002BL-T, 28F002BL-B 16-KB 96-KB

    1A14A

    Abstract: T28F200 28F400-T
    Text: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase


    OCR Scan     		PDF x8/x16-Selectable 28F400 32-bit AP-611 28F002/200BX-T/B 28FQ02/200BL-T/B 28F004/400BX-T/B 28F004/400BL-T/B AP-604 AP-617 1A14A T28F200 28F400-T

    29057

    Abstract: intel 4269
    Text: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time a Low Power Consumption — 20 mA Typical Read Current ■ x8-Only Input/Output Architecture — Space-Constrained 8-bit


    OCR Scan     		PDF 28F002BC 16-KB 96-KB 128-KB 29057 intel 4269