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    1Z27A Search Results

    1Z27A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1Z27A Toshiba ZENER DIODE SILICON DIFFUSED JUNCTION TYPE Original PDF
    1Z27A Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1Z27A Unknown Cross Reference Datasheet Scan PDF
    1Z27A Toshiba DIODE (CONSTANT VOLTAGE REGULATION) Scan PDF
    1Z27A(Q) Toshiba Diode Zener SINGLE 27V 5% 1000MW 2DO-15 Original PDF

    1Z27A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1Z51

    Abstract: No abstract text available
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s


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    PDF 1Z390 1Z30A 1Z51

    1Z150

    Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs


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    PDF 1Z390 1Z30A DO-15 SC-39 1Z150 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A

    1Z12

    Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V


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    PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z12 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A

    1Z27A

    Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z13A 1Z390
    Text: BL GALAXY ELECTRICAL ZENER DIODES 1Z6.2 - - - 1Z390 POWER DISSIPATION: 1.0 W FEATURES DO - 15 Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage


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    PDF 1Z390 DO-15 MIL-STD-202, 39grams. 1Z27A 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z13A 1Z390

    1Z10

    Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs


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    PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A

    zener diode 1NU 9F

    Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
    Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:


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    PDF BCE0001A BCE0001B zener diode 1NU 9F diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5

    1Z10

    Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s


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    PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A

    DO-41S

    Abstract: DO-15L 1Z220 U1DL49 CRH01 1FWJ43N CMZ24 U05NH 2z16 CRS01
    Text: [ 4 ] 推奨品種一覧表 [ 4 ] 推奨品種一覧表 <新規設計時の推奨品 新規設計時の推奨品> 新規設計時の推奨品 一般整流ダイオード ピーク繰り返し逆電圧 パッケージ 100 V 0.7 A 平均順電流 1A 400 V 600 V


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    PDF 1S1830 S5277B S5277G S5277J S5277N S5566B S5566G S5566J S5566N S5688B DO-41S DO-15L 1Z220 U1DL49 CRH01 1FWJ43N CMZ24 U05NH 2z16 CRS01

    SBLF10100CT

    Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
    Text: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V


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    PDF SZQ50A24L3 SZQ50A28L3 SZQ50A34L3 SZQ50A38L3 SZQ50K24L3 SZQ50K28L3 SZQ50K34L3 SZQ50K38L3 SBLF10100CT SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510

    1Z16

    Abstract: 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage


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    PDF 1Z390 1Z30A DO-15 SC-39 1Z16 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A

    1z390

    Abstract: No abstract text available
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage


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    PDF 1Z390 1Z30A DO-15 SC-39 961001EAA2 1Z100 1Z110 1Z150

    smd 1gw

    Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
    Text: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N


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    PDF DO-15 DO-41 DO-201AD S5277B S5566B S5688B U1BC44 1S1885A 1R5BZ41 smd 1gw diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42

    Z6 ZENER DIODE

    Abstract: Z6 DIODE LZ13A 2-1Z390 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390
    Text: TOSHIBA 1Z 6 . 2 - 1Z390,1Z 6 . 8 A - 1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1 Z 6.8 A -1Z 3 0 A CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation :


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    PDF 2-1Z390 A-1Z30A 2-1Z390, DO-15 SC-39 Z6 ZENER DIODE Z6 DIODE LZ13A 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390

    1ZB36

    Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
    Text: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47


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    PDF 15J4B42 160G2G43 160L2G43 160Q2G43 160U2G43 160DL2C41A 16FL2C41A 16DL2CZ47A 16FL2CZ47A 1B4B41 1ZB36 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ

    1S1540

    Abstract: 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11 1Z11A
    Text: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A


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    PDF 1S798 1S799 1S799Â 210lV/ 1S800 1S800Â 1S989 1S990-A i15-0Â 25MIN 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A 1Z11 1Z11A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1Z6.2~1Z390,1Z6.8A~1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1Z6.8A-1Z30A Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS & Average Power Dissipation : P=1W Peak Reverse Power Dissipation : P r s M“ 200W at tw = 200/¿s


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    PDF 1Z390 1Z30A 2-1Z390, A-1Z30A DO-15 SC-39

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    1S1540

    Abstract: 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11 1Z11A
    Text: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A


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    PDF 1S798 1S799 1S799Â 210lV/ 1S800 1S800Â 1S989 1S990-A 1Z20A 16mV/Â 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A 1Z11 1Z11A

    1S990-A

    Abstract: IS990 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A 1Z11
    Text: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A


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    PDF 1S798 1S799 1S799Â 210lV/ 1S800 1S800Â 1S989 1S990-A 1Z20A 16mV/Â IS990 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A 1Z11

    Z12A

    Abstract: 1S1540 1S798 1S799 1S800 1S989 1S990-A 1Z10 1Z10A 1Z11
    Text: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A


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    PDF 1S798 1S799 1S799Â 210lV/ 1S800 1S800Â 1S989 1S990-A 33mV/Â 26MIN Z12A 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A 1Z11

    1S1540

    Abstract: 1Z10 1S798 1S799 1S800 1S989 1S990-A 1Z10A 1Z11 1Z11A
    Text: - • w m s ft % p mm 12 Vz V Wèt\ "J » Zzmax LW h JJ.-L«* J 3Hi \ r Vz I Rinax Zzfcmax * © fft :i (mt) (nA) 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A


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    PDF 1S798 1S799 1S799Â 210lV/ 1S800 1S800Â 1S989 1S990-A 1Z20A 16mV/Â 1S1540 1Z10 1S798 1S799 1S800 1S989 1Z10A 1Z11 1Z11A

    S4 87A

    Abstract: 1S990-A Z12A 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A
    Text: - • w "J W è t\ » m m m s ft % p 1S798 1S799 1S799 1S800 1S800® 1S989 1S990-A 1SI 540 1S1540® 1Z6. 2 1Z6. 8 1Z6.8A 1Z7. 5 1Z7.5A 1Z8. 2 1Z8.2A 1Z9. 1 1Z9. ÎA 1Z10 1Z10A 1Z11 1Z11A 1212 1Z12A 1Z13 1Z13A IZ15 1Z15A 1Z16 1Z16A 1Z18 1Z18A 1Z20 1Z20A 1Z22


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    PDF 1S798 1S799 1S799Â 210lV/ 1S800 1S800Â 1S989 1S990-A 25mV/Â 26tnV/Â S4 87A Z12A 1S1540 1S798 1S799 1S800 1S989 1Z10 1Z10A

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor