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    1SS385 Search Results

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    1SS385 Price and Stock

    Toshiba America Electronic Components 1SS385FV,L3F

    DIODE SCHOTTKY 10V 100MA VESM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS385FV,L3F Cut Tape 5,482 1
    • 1 $0.2
    • 10 $0.125
    • 100 $0.2
    • 1000 $0.04962
    • 10000 $0.04392
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    1SS385FV,L3F Digi-Reel 5,482 1
    • 1 $0.2
    • 10 $0.125
    • 100 $0.2
    • 1000 $0.04962
    • 10000 $0.04392
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    1SS385FV,L3F Reel 8,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.03505
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    Avnet Americas 1SS385FV,L3F Reel 12 Weeks 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.02754
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    Mouser Electronics 1SS385FV,L3F 9,842
    • 1 $0.18
    • 10 $0.112
    • 100 $0.048
    • 1000 $0.039
    • 10000 $0.03
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    TTI 1SS385FV,L3F Reel 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0284
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    Toshiba America Electronic Components 1SS385,LF(CT

    DIODE SCHOTTKY 10V 100MA SSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS385,LF(CT Digi-Reel 4,975 1
    • 1 $0.31
    • 10 $0.188
    • 100 $0.31
    • 1000 $0.077
    • 10000 $0.077
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    1SS385,LF(CT Cut Tape 4,975 1
    • 1 $0.31
    • 10 $0.188
    • 100 $0.31
    • 1000 $0.077
    • 10000 $0.077
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    1SS385,LF(CT Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.06433
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    Avnet Americas 1SS385,LF(CT Reel 12 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.04768
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    Mouser Electronics 1SS385,LF(CT
    • 1 $0.28
    • 10 $0.176
    • 100 $0.075
    • 1000 $0.068
    • 10000 $0.044
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    TTI 1SS385,LF(CT Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.044
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    Samtec Inc MTMM-134-11-S-S-385

    VARIABLE POST HEIGHT HEADER STRI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTMM-134-11-S-S-385 Bulk 1
    • 1 $10.2
    • 10 $10.2
    • 100 $10.2
    • 1000 $10.2
    • 10000 $10.2
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    Avnet Americas MTMM-134-11-S-S-385 Bulk 1 Weeks 1
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    Mouser Electronics MTMM-134-11-S-S-385
    • 1 $8.36
    • 10 $7.92
    • 100 $5.9
    • 1000 $3.81
    • 10000 $2.65
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    Master Electronics MTMM-134-11-S-S-385
    • 1 -
    • 10 $11.09
    • 100 $7.09
    • 1000 $4.31
    • 10000 $4.31
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    Sager MTMM-134-11-S-S-385 117 1
    • 1 $10.2
    • 10 $9.42
    • 100 $6.34
    • 1000 $5.59
    • 10000 $5.59
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    JRH Electronics MTMM-102-11-S-S-385

    PIN HEADER, BOARD-TO-BOARD, 2 MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTMM-102-11-S-S-385 Bulk 1
    • 1 $1.73
    • 10 $1.73
    • 100 $1.73
    • 1000 $0.67273
    • 10000 $0.67273
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    Samtec Inc MTMM-102-11-S-S-385

    CONN HEADER VERT 2POS 2MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTMM-102-11-S-S-385 Bulk 1
    • 1 $0.95
    • 10 $0.95
    • 100 $0.95
    • 1000 $0.95
    • 10000 $0.95
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    Avnet Americas MTMM-102-11-S-S-385 Bulk 1
    • 1 $0.62
    • 10 $0.62
    • 100 $0.45
    • 1000 $0.35
    • 10000 $0.35
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    Mouser Electronics MTMM-102-11-S-S-385
    • 1 $0.62
    • 10 $0.62
    • 100 $0.45
    • 1000 $0.35
    • 10000 $0.16
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    Newark MTMM-102-11-S-S-385 Bulk 1
    • 1 $0.775
    • 10 $0.679
    • 100 $0.585
    • 1000 $0.427
    • 10000 $0.354
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    Master Electronics MTMM-102-11-S-S-385
    • 1 -
    • 10 -
    • 100 $0.7308
    • 1000 $0.4179
    • 10000 $0.2603
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    Sager MTMM-102-11-S-S-385 2,150 1
    • 1 $0.95
    • 10 $0.95
    • 100 $0.59
    • 1000 $0.37
    • 10000 $0.33
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    1SS385 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS385 Toshiba Japanese - Diodes Original PDF
    1SS385 Toshiba shottky barrier diode Original PDF
    1SS385 Toshiba DIODE (HIGH SPEED SWITCHING) Scan PDF
    1SS385 Toshiba DIODE Scan PDF
    1SS385F Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS385(F) Unknown Silicon Diode Scan PDF
    1SS385FV Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS385FV,L3F Toshiba America Electronic Components SMALL-SIGNAL SCHOTTKY BARRIER DI Original PDF
    1SS385,LF(CT Toshiba America Electronic Components SMALL-SIGNAL SCHOTTKY BARRIER DI Original PDF
    1SS385TE85LF Toshiba 1SS385TE85LF - Diode Small Signal Schottky 15V 0.1A 3-Pin SSM T/R Original PDF

    1SS385 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385F 1SS385F

    1SS385

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385 1SS385

    VR101

    Abstract: 1SS385FV
    Text: 1SS385FV 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS385FV ○ 高速スイッチング用 単位: mm 0.22±0.05 電 電 圧 VRM 15 V 圧 VR 10 V せ ん 頭 順 電 流 IFM 200* mA 平 均 整 流 電 流 IO 100*


    Original
    PDF 1SS385FV 100mA VR101 1SS385FV

    1SS385

    Abstract: 1-2S1B
    Text: 1SS385 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS385 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF 2 = 0.23V (標準)


    Original
    PDF 1SS385 100mA 1SS385 1-2S1B

    1SS385FV

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR


    Original
    PDF 1SS385FV 1SS385FV

    Untitled

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385F 100mA

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385F 1SS385F

    Untitled

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR


    Original
    PDF 1SS385

    Untitled

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385

    Untitled

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR


    Original
    PDF 1SS385FV

    Untitled

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum peak forward current IFM 200 * mA Average forward current IO 100 * mA IFSM


    Original
    PDF 1SS385FV

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385F 1SS385F

    1SS385

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385 1SS385

    Untitled

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA l Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385 100mA

    1SS385

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR


    Original
    PDF 1SS385 1SS385

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385F 1SS385F

    1SS385FV

    Abstract: No abstract text available
    Text: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Ultra-small package 1.2±0.05 0.32±0.05 Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 0.8±0.05 Rating 0.4 Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385FV 1SS385FV

    1SS385

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA l Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS385 1SS385

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 <; <; 3 » R F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA • Ultra-Small Package 0.85 ±0.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS385F

    Untitled

    Abstract: No abstract text available
    Text: 1SS385 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS38 5 HIGH SPEED SWITCHING. • • U nit in mm 1. 6± 0.2 Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ip = 5mA Small Package ,0.8 ± 0.1 HO dö MAXIMUM RATINGS (Ta = 25°C) oo i—i


    OCR Scan
    PDF 1SS385 1SS38

    marking CS TOSHIBA

    Abstract: No abstract text available
    Text: 1SS385 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING. • • 1 SS385 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 1 .6 Í0.2 Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ip = 5mA Small Package , 0 .8 ± 0.1 HO + ’I oo LD i- “i o M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS385 SS385 marking CS TOSHIBA

    xl marking

    Abstract: 1SS385F
    Text: TOSHIBA 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F Unit in mm HIGH SPEED SWITCHING 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vjr = 0.23 V Typ. @Ijr = 5 mA Ultra-Small Package M A X IM U M RATINGS (Ta = 25°C) RATING UNIT


    OCR Scan
    PDF 1SS385F xl marking 1SS385F

    7N09

    Abstract: No abstract text available
    Text: 1SS385F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA Ultra-Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    PDF 1SS385F 7N09

    toshiba diode 3D

    Abstract: 1SS385
    Text: 1SS385 TOSHIBA TOSHIBA DIODE 1SS385 HIGH SPEED SWITCHING. • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE U nit in mm Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5mA Small Package MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse Voltage


    OCR Scan
    PDF 1SS385 toshiba diode 3D 1SS385