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    1SS38 Price and Stock

    Toshiba America Electronic Components 1SS387,L3F

    DIODE GEN PURP 80V 100MA ESC
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    DigiKey 1SS387,L3F Cut Tape 101,782 1
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    1SS387,L3F Digi-Reel 101,782 1
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    1SS387,L3F Reel 88,000 8,000
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    Mouser Electronics 1SS387,L3F 479,379
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    Bristol Electronics 1SS387,L3F 3,117
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    TTI 1SS387,L3F Reel 8,000
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    Toshiba America Electronic Components 1SS383(TE85L,F)

    DIODE ARR SCHOTT 40V 100MA USQ
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    DigiKey 1SS383(TE85L,F) Reel 21,000 3,000
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    Mouser Electronics 1SS383(TE85L,F) 3,566
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    Newark 1SS383(TE85L,F) Cut Tape 2,995 5
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    Chip1Stop 1SS383(TE85L,F) Cut Tape 731
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    EBV Elektronik 1SS383(TE85L,F) 19 Weeks 3,000
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    Toshiba America Electronic Components 1SS384TE85LF

    DIODE ARR SCHOTT 10V 100MA USQ
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    DigiKey 1SS384TE85LF Cut Tape 12,990 1
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    1SS384TE85LF Digi-Reel 12,990 1
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    1SS384TE85LF Reel 12,000 3,000
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    Mouser Electronics 1SS384TE85LF 9,168
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    Toshiba America Electronic Components 1SS382TE85LF

    DIODE ARRAY GP 80V 100MA USQ
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    DigiKey 1SS382TE85LF Reel 12,000 3,000
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    Mouser Electronics 1SS382TE85LF 4,247
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    Bristol Electronics 1SS382TE85LF 3,465
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    Quest Components 1SS382TE85LF 2,772
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    EBV Elektronik 1SS382TE85LF 13 Weeks 1
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    Win Source Electronics 1SS382TE85LF 145,900
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    ROHM Semiconductor 1SS380TE-17

    DIODE GEN PURP 35V 100MA UMD2
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    DigiKey 1SS380TE-17 Cut Tape 6,949 1
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    1SS380TE-17 Digi-Reel 6,949 1
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    1SS380TE-17 Reel 6,000 3,000
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    Mouser Electronics 1SS380TE-17 69,161
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    Verical 1SS380TE-17 36,000 455
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    1SS380TE-17 10,658 455
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    Newark 1SS380TE-17 Cut Tape 8,876 5
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    Bristol Electronics 1SS380TE-17 6,000 34
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    1SS380TE-17 1,000 34
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    Quest Components 1SS380TE-17 37,326
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    1SS380TE-17 3,200
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    1SS380TE-17 2,400
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    1SS380TE-17 2,048
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    TTI 1SS380TE-17 Reel 33,000 3,000
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    Avnet Asia 1SS380TE-17 24 Weeks 3,000
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    Avnet Silica 1SS380TE-17 13 Weeks 3,000
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    Chip1Stop 1SS380TE-17 Cut Tape 760
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    Win Source Electronics 1SS380TE-17 60,000
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    1SS38 Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS380 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Diode Original PDF
    1SS380 Kexin Switching Diode Original PDF
    1SS380 ROHM Switching Diode Original PDF
    1SS380 TY Semiconductor Switching Diode - SOD-323 Original PDF
    1SS380 Weitron Surface Mount Switching Diode Original PDF
    1SS380TE-17 ROHM DIODE SWITCHING DIODE 40V 0.1A 2UMD2 T/R Original PDF
    1SS380VMFHTE-17 Rohm Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - 1SS380VMFH IS THE HIGH RELIABILI Original PDF
    1SS380VMTE-17 ROHM Semiconductor 1SS380VM IS LOW IR SW Original PDF
    1SS381 Kexin VHF Tuner Band Switch Applications Original PDF
    1SS381 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SS381 TY Semiconductor VHF Tuner Band Switch Applications - SOD-523 Original PDF
    1SS381 Toshiba Silicon diode for VHF tuner band switch applications Scan PDF
    1SS381,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - RF - DIODE RF SWITCH 30V 100MA ESC Original PDF
    1SS381TH3T Toshiba 1SS381TH3T - Diode PIN Switch 30V 2-Pin ESC Original PDF
    1SS381TL3FT Toshiba 1SS381 - DIODE RF SWITCH 30V 100MA S-MINI Original PDF
    1SS381TPH3 Toshiba 1SS381TPH3 - Diode PIN Switch 30V 2-Pin ESC T/R Original PDF
    1SS381(TPH3,F) Toshiba 1SS381 - Diode PIN Switch 30V 2-Pin ESC T/R Original PDF
    1SS381TPH3F Toshiba 1SS381TPH3F - Diode PIN Switch 30V 2-Pin ESC T/R Original PDF
    1SS381TPL3 Toshiba 1SS381TPL3 - Diode PIN Switch 30V 2-Pin ESC T/R Original PDF
    1SS381TPL3F Toshiba 1SS381TPL3F - Diode PIN Switch 30V 2-Pin ESC T/R Original PDF

    1SS38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking s3

    Abstract: smd transistor s3 1SS388
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02


    Original
    PDF 1SS388 OD-523 07max 77max Marking s3 smd transistor s3 1SS388

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage


    Original
    PDF 1SS383 OT-343

    1SS381

    Abstract: No abstract text available
    Text: 1SS381 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS381 ○ VHF チューナバンドスイッチ用 単位: mm • 2 端子超小型外囲器なので超高密度実装ができチューナの小型化に適 しています。


    Original
    PDF 1SS381 1SS381

    Untitled

    Abstract: No abstract text available
    Text: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm z Compact 2-pin package – ideal for high-density mounting z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


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    PDF 1SS387

    Untitled

    Abstract: No abstract text available
    Text: Switching Diode 1SS380 Dimensions Unit : mm Applications High speed switching Land size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 2.5±0.2 1.7±0.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability 2.1 0.8MIN. 1.25±0.1 UMD2


    Original
    PDF 1SS380 OD-323 SC-90/A R1120A

    S3 marking DIODE

    Abstract: 1SS388 J-STD-020D TEMA
    Text: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-523 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOD-523 Dim. MECHANICAL DATA • Case: SOD-523 Plastic


    Original
    PDF 1SS388 OD-523 OD-523 J-STD-020D 2002/95/EC S3 marking DIODE 1SS388 J-STD-020D TEMA

    1ss388

    Abstract: marking 724 diode
    Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 O Top View Marking Code: "O" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


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    PDF 1SS388 OD-523 OD-523 1ss388 marking 724 diode

    Untitled

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original
    PDF 1SS382 100mA

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


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    PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS387 Features • • • • • • • Halogen free available upon request by adding suffix "-HF" High speed switching diode


    Original
    PDF 1SS387 OD-52

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS388 Features • • • • • • • Halogen free available upon request by adding suffix "-HF" High speed switching diode


    Original
    PDF 1SS388 OD-523,

    low-leakage silicon diode

    Abstract: 1SS380 diode construction diodes silicon diode umd23
    Text: Diodes Low-leakage switching diode 1SS380 FApplications Low leakage switching FExternal dimensions Units: mm FFeatures 1) High reliability. 2) Small surface mounting type. (UMD2) 3) The typical reverse current is extremely low of 40pA. FConstruction Silicon epitaxial planar


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    PDF 1SS380 low-leakage silicon diode 1SS380 diode construction diodes silicon diode umd23

    1SS388GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 1SS388GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.1 Ampere APPLICATION * Low current rectification and high speed switching SC-79/SOD-523 FEATURE * Extremely small surface mounting type. SC-79/SOD-523 * Io=200mA guaranteed despite size


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    PDF 1SS388GP SC-79/SOD-523 SC-79/SOD-523) 200mA 200mA) 1SS388GP

    BAT54M3T5G

    Abstract: 419C-02 MMVL3700T1
    Text: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40


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    PDF 1SS383T1 SC-82AB 419C-02 BAT54CXV3T5 SC-89 463C-03 RB751S40T1 BAT54XV2T1 RB520S30T1 RB521S30T1 BAT54M3T5G 419C-02 MMVL3700T1

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original
    PDF 1SS382 1SS382

    S3 marking DIODE

    Abstract: smd diode code s3 SMD MARKING CODE A12 A12 smd smd code a12 diode IR 100 8K A12 diode Marking Code s3 diode Smd diode s3 marking A12
    Text: 1SS388 150mW, SMD High Speed Switching Diode Small Signal Diode SOD-523 B Features C Fast switching device Trr<4.0nS A Surface device type mounting Moisture sensitivity level 1 D Matte Tin(Sn) lead finish Pb free version,RoHS compliant Green compound (Halogen free) with suffix "G" on


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    PDF 1SS388 150mW, OD-523 OD-523F MIL-STD-202, C/10s S3 marking DIODE smd diode code s3 SMD MARKING CODE A12 A12 smd smd code a12 diode IR 100 8K A12 diode Marking Code s3 diode Smd diode s3 marking A12

    1SS382

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)


    Original
    PDF 1SS382 1SS382

    1SS385F

    Abstract: No abstract text available
    Text: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


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    PDF 1SS385F 1SS385F

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o


    OCR Scan
    PDF 1SS384 SS384

    Untitled

    Abstract: No abstract text available
    Text: 1SS388 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS388

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 <; <; 3 » R F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA • Ultra-Small Package 0.85 ±0.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS385F

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS381 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS381 Unit in mm VHF TUNER B A N D SWITCH APPLICATIONS • Small Package • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.6il (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS381 SS381 0014g

    1SS382

    Abstract: No abstract text available
    Text: TOSHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)


    OCR Scan
    PDF 1SS382 961001EAA2' 1SS382

    1SS384

    Abstract: EL marking
    Text: 1SS384 TOSHIBA TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) )Ijr = 5mA M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS384 961001EAA2' 1SS384 EL marking