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    1NS14 Price and Stock

    Vishay Intertechnologies NS1\41R000FE12

    Wirewound Resistors - Through Hole 1ohm 1% Axial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NS1\41R000FE12
    • 1 $8.34
    • 10 $8.13
    • 100 $6.72
    • 1000 $5.37
    • 10000 $5.37
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    Vishay Intertechnologies NS1/41R500FE12

    Wirewound Resistors - Through Hole NS-1/4 1.5 1% E12 e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NS1/41R500FE12
    • 1 $4.4
    • 10 $4.06
    • 100 $3.12
    • 1000 $2.36
    • 10000 $2.33
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    Vishay Intertechnologies NS1/41R400FE12

    Wirewound Resistors - Through Hole NS-1/4 1.4 1% E12 e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NS1/41R400FE12
    • 1 $4.4
    • 10 $4.06
    • 100 $3.12
    • 1000 $2.36
    • 10000 $2.33
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    Vishay Intertechnologies NS1/41R470FE12

    Wirewound Resistors - Through Hole NS-1/4 1.47 1% E12 e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NS1/41R470FE12
    • 1 $4.4
    • 10 $4.06
    • 100 $3.12
    • 1000 $2.36
    • 10000 $2.33
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    Vishay Intertechnologies NS1/41R690FE12

    Wirewound Resistors - Through Hole NS-1/4 1.69 1% E12 e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NS1/41R690FE12
    • 1 $4.4
    • 10 $4.06
    • 100 $3.12
    • 1000 $2.36
    • 10000 $2.33
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    1NS14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N33A

    Abstract: 1n250 diode 1N34* diode diode 1n34 1N254 1N255 "general diode corporation" 1N1117 1N339 1N348
    Text: 3869720 G E N ER A L DIODE C O R P 860 00322 GENERAL DIODE CORP ñb D T'-Ö/'V/ D eT| 301^750 0000355 0 STUD MOUNTED SILICON POWER RECTIFIERS & TYPE \ IV \ \\ % 1N24S 1N248A, B 1N249 1N249A,B 1N250 DO-5 Do-5 Do-5 Do-5 Do-5 50 50 100 100 200 1N250A, B 1N253


    OCR Scan     		PDF 1N248 1N248A, 1N249 1N249A, 1N250 1N250A, 1N253 1N254 1N255 1N25S 1N33A 1n250 diode 1N34* diode diode 1n34 "general diode corporation" 1N1117 1N339 1N348

    2n5385

    Abstract: 1NS14
    Text: 3 8 7 5 0 ^ G E SOL ID STAT e ”01 DE | 3075001 001^401 0 7~ - J 3 * / ) TIP 31 Series NPN POWER TRANSISTORS 4 0 -1 0 0 V O L T S 3 A M P , 40 W A T T S COMPLEMENTARY TO THE TIP32 SERIES The TIP31 Series power transistors are designed for use in general purpose amplifier and switching applications.


    OCR Scan     		PDF TIP32 TIP31 2n5385 1NS14

    GL393

    Abstract: GL-393 GL339 GL-393-A 12N2222 GL393A transistor k 4212 GL339A 1N914 wv1 transistor
    Text: GL339/339A LOW POWER, LOW OFFSET VOLTAGE QUAD COMPARATORS Description Pin Configuration The GL339 consists of four independent precision voltage com­ parators designed specifically to operate from a single power supply Operation from split power supplies is also possible and


    OCR Scan     		PDF GL339/339A GL339 10-Comparator GL393 0004b03 GL393 GL-393 GL-393-A 12N2222 GL393A transistor k 4212 GL339A 1N914 wv1 transistor

    TE 2556

    Abstract: Triangle Microwave modulators IC S 2556
    Text: HA-2556 3 HAS» » 57MHz, Wideband, Four Quadrant, Voltage Output Analog Multiplier November 1996 Features Description • High Speed Voltage Output. 450V/us The HA-2556 is a monolithic, high speed, four quadrant, analog m ultiplier constructed in the Harris Dielectrically


    OCR Scan     		PDF HA-2556 57MHz, HA-2556 52MHz 57MHz -50dB S13N4) TE 2556 Triangle Microwave modulators IC S 2556

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    HA1930A

    Abstract: 1N5471A 1N545 ha1930 s4si
    Text: CHIP DIODES UHF I VHF TUNING DIODES HI6H Q FOR MANY UHF-V H F USES LOWEST LEAKAGE HIGH 0 TYPE RATIO C2/C30 mm/ma* 04 0 SO MHz mm T YPE NO. TO O R D E R AD D " C H IP " HYPERABRUPT HIGH 0 ABRUPT GOOD 0 RATIO Q4 e C2/C3I min/m* 59 MHz min RATIO TYPE NO RATIO


    OCR Scan     		PDF C2/C30 1NS141 1NS143 HA1916A HAI918A I919A SOS441 C3/C20 C4/C29 HA1930A 1N5471A 1N545 ha1930 s4si

    HA1120

    Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
    Text: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf


    OCR Scan     		PDF C2/C20 C2/C10 C2/C30 50MHi SQ1213A G702A SQ1214A sai21 C20/pf HA1120 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 S01718 DIODO 10 W

    1NS14

    Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
    Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S


    OCR Scan     		PDF SQ1213A MV83Z MV833 MVB34 MV835 MVS36 MV837 MV838 MVB40 1NS14 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    IN5448A

    Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
    Text: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS


    OCR Scan     		PDF C2/C20 MV1620 VI824 MVI124 MV1I32 MV1I34 VI136 MV1842 MV1I58 C3/C28 IN5448A 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652

    HA1930

    Abstract: No abstract text available
    Text: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE


    OCR Scan     		PDF C2/C20 C2/C30 C4/C25 SQ1213A SQ1714 SQ1215A G702A C20/pf HA1930

    1N4810

    Abstract: 1N5470A 1N5140 1N5143 1N5145 1N5146 1N5696A 1N5698A 1N5699A 1N5700A
    Text: C 0 D I SEMICONDUCTOR INC 2TE D B 1 7 7 5 M 7 G GDGGbSfl 1 B i C O D I T -0 7 -ll Voltage-Variable C apacitan ce Timing Diodes CODI's voltage variable capacitor (W C ) product line is one of the broadest, h ig h -q u a lity lines in the industry. COOI otters W C s with tow leakage, ultra - high Q, high reverse


    OCR Scan     		PDF 177SM7G T-07-1I tC3344 VVC3345 VVC3346 VVC3347 VVC3298 WC3311 VVC3324 WC3299 1N4810 1N5470A 1N5140 1N5143 1N5145 1N5146 1N5696A 1N5698A 1N5699A 1N5700A

    1H5108

    Abstract: No abstract text available
    Text: IH5108 IH5108 HARRIS S E M I C O N D U C T O R 8-Channel Fault Protected CMOS Analog Multiplexer October 1997 GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for


    OCR Scan     		PDF IH5108 IH5108 HI548 IH5108s IH5053 IH5108s. 1H5108

    G603A

    Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
    Text: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted


    OCR Scan     		PDF 000036b T-07-19 C2/C20 C2/C30 C4/C25 SQ1213A G702A SQ1214A G603A S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A

    1NS14

    Abstract: ir0004 1M11A S01217A HA1I34A SQ1214A SQ1215A 2S0 765 MV18S VI634
    Text: C Æ ISO elect HERMETICALLY SEALED G L A S S PA C K A G ED TUNING DIO DES A B R U P T - H Y P E R A B R U P T Uf E L E C T R IC A L CH A R A CTER ISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS Otode Cap. (CT)* £10% 94V/1 MHi TYPE Pf NO


    OCR Scan     		PDF C2/C20 C2/C30 50MHI C4/C25 S01213A SQ1214A SQ1215A S01715 1NS14 ir0004 1M11A S01217A HA1I34A 2S0 765 MV18S VI634

    1N5450A

    Abstract: MV1644 MV1624 MV1636 MV1641 1N5140 1N5470A
    Text: •MOTOROLA SC -CDIODES/OPTO} 636.7255 MOTOROLA 34 SC DET|b3b?5S5 <D I O D E S / O P T O 34C 003ai0D t | ~ 38100 D 1—I f ' SILICON TUNING DIODE DICE continued) 1C5139 DIE NO. — SERIES LINE SOURCE — DV61 This die provides performance equal to or better than that of


    OCR Scan     		PDF 003ai0D 1C5139 1N5139 1N5140 1N5141 1N5142 1N5143 1N5144 1N5145 1N5146 1N5450A MV1644 MV1624 MV1636 MV1641 1N5470A

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


    OCR Scan     		PDF