1N6264
Abstract: No abstract text available
Text: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM
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1N6264
1N6264
DS300276
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QRB1134
Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6
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1N6264
1N6265
BPW36
BPW37
BPW38
CNY28
CNY29
CNY36
CQX14
CQX15
QRB1134
H22A2
QRB1113
QRB1114
QRD1114
LED55C
QSE113
QSC112
QSE157
QSE158
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ir diode 940 nm
Abstract: LED55B LED56 LED55C LED56F 1N6264 1N6265 CQX14 CQX15 CQX16
Text: Optoelectronics Hermetic Light Emitting Diodes Part Number PO @ 100 mA IF mW min max VF @ 100 mA IF (V) max IR @ 3 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp TO-46 Diode Package (Convex Lens) 1N6264 6.00 – 1.7 10 16 940
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1N6264
CQX14
CQX16
LED55B
LED55C
LED56
1N6265
CQX15
ir diode 940 nm
LED55B
LED56
LED55C
LED56F
1N6264
1N6265
CQX14
CQX15
CQX16
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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IRF 548
Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39
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1N5333B
1N914
2N5886
30WQ04FN
1N5335B
1SMB15AT3
2N6027
30WQ06FN
1N5336B
2N6028
IRF 548
irf 1244
IRF 547
IRF 725
irf 846
IRF 024
fsc 2n7000
IRF 850
irf818
iRF 800
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L14F1 phototransistor datasheet
Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
L14F1 phototransistor datasheet
L14F1 PHOTOTRANSISTOR
phototransistor 3 pin L14F1
Phototransistor L14F1
l14f1 ir phototransistor
T1 L14F1
Phototransistor L14G3
L14F1 PHOTOTRANSISTOR PIN
opto transistor moc 12v
LED 55 with L14F1 phototransistor
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4n35 optocoupler spice model
Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
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TS-16949
ISO-14001,
4n35 optocoupler spice model
L14F1 phototransistor datasheet
MOC3043-M spice model
H11F1 SPICE MODEL
h11D1 spice
MOC3010 spice
L14F1 PHOTOTRANSISTOR
slotted optocouplers
DARLINGTON phototransistor l14f1
spice MOC3011
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LED55B
Abstract: LED55C LED56
Text: Hermetic Light Emitting Diodes TO-46 Diode Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) Part Number 5 PO @ 100 mA IF VF @ 100 mA IF (mW) (V) min max max IR @ 3 V VR (µA)
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1N6264
CQX14
CQX16
LED55B
LED55C
LED56
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255
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1N6264
1N6264
940nm
ST1332
74bbasi
000b3
ST1002
ST1007
ST1003
ST1006
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ST10M
Abstract: No abstract text available
Text: E O 8 GaAs INFRARED EMITTING DIODE P?ßfLiCTBSiiCS 1N6264 The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. ST1332 • Good optical to mechanical alignment SYMBOL A j»b «D &C, e «. rt i k L » INCHES MAX. MIN 255 ,01S .021 .230 ,iac .<86 .100 NOM.
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1N6264
1N6264
940nm
ST1332
ST16Q4
ST1007
ST1006
ST10M
ST1004
ST10M
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t 935
Abstract: 1r 10e T935
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. SEATING a FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A <£b 40 e 01 h MAX MILLIMETERS
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1N6264
1N6264
940nm
ST1332
ST1604
t 935
1r 10e
T935
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Untitled
Abstract: No abstract text available
Text: Emitter Specifications _ 1N6264,1N6265 Infrared Em itter G allium Arsenide Infrared Em itting D iode The 1X6264 and 1N6265 Series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy. They are ideally
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1N6264
1N6265
1X6264
1N6265
1N6264,
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LM 8105
Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
6N139
740L6001
740L6010
LM 8105
SD318
AN6610
5354A
B1134
SE773
CPL-2503
B1133
SE158
6363t
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se113
Abstract: No abstract text available
Text: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135
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H22A2
H22A3
H22A4
H22A5
H22A6
1N6264
1N6265
1N6266
BPW36
BPW37
se113
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ic 6264
Abstract: 1N6264A 1N6264
Text: Emitter Specifications _ 1N6264,1N6265 Infrared Emitter Gallium Arsenide Infrared Emitting Diode — * —-rth T h e 1N 6264 a n d 1N 6265 S e rie s a re g a lliu m a rs e n id e , lig h t e m ittin g d io d e s w h ic h e m it n o n - c o h e r e n t, in f r a r e d e n e rg y . T h e y a re id e a lly
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1N6264
1N6265
I00N0M
1N6265
ic 6264
1N6264A
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID 01E STATE Optoelectronic S p ecificatio n s- HARRI S SEIHCOND 19642 D - T4I-M SECTOR 37E D M 43G2E71 G0271QM Infrared Emitter T • 1N 6264 1N6264,1N6265 Gallium Arsenide Infrared — Em itting Diode T T he G E Solid State 1N6264 and 1N6265 Series are gallium arsenide, light
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43G2E71
G0271QM
1N6264
1N6265
1N6265
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MAN-8610
Abstract: CNW82 HLMPD150A CNY17GF-1
Text: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
740L6000
740L6001
740L6011
MAN-8610
CNW82
HLMPD150A
CNY17GF-1
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ORB1134
Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Text: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
6N139
740L6000
740L6001
ORB1134
H11F1 300
CNY17GF-2
cnw85
CQX17
L14LOB
OPB704
MAN4710
1LP6
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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Untitled
Abstract: No abstract text available
Text: QUALITY AND RELIABILITY OF OPTOELECTRONIC COMPONENTS Q U A L IT Y A N D R E L IA B IL IT Y C O S T S T he circuit d esigner m ust be aw are o f the expected reliabilty o f the m any d iffere n t com ponents used. T his allow s control o f life cycle costs, such as w arranty costs, repair costs and dow ntim e costs,
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12min.
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MOC5010
Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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1N6264
1N6265
1N6266
4N25A
4N29A
4N32A
4N38A
L14C2
MOC5010
MOC7811
TIL31A
TIL34A
TIL903-1
OP8815
SCS11C3
h2181
TIL99
TIL143
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TIL145
Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Text: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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1N6264
1N6265
1N6266
H21A1
H21B1
H22A2
TIL145
ge h11a
TIL31A
TIL33A
MOC7811
TIL81
TIL99
TIL903-2
C3012
TIL34A
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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SKE33
Abstract: SKE68A SKE400A ske36 1.SKE180 SKE400
Text: GENERAL SEMICONDUCTOR 3918590 G EN ERAL TS SEM ICO N D U C TO R Ï F| B IIÛ ST O 95D 01983 0 D Q n û 3 / / -J 3 General ^ Semiconductor ^ Industries, Inc. Tr a n s Zo r b ® ^ FEATU RES 1500 watts Peak Pulse Power dissipation Fast Response Available In ranges from 6.8 to 400
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5KE200CA
5KE220CA)
1N6267
1N6303A
SKE400A
TWX910-950-1942
SKE33
SKE68A
SKE400A
ske36
1.SKE180
SKE400
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