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    Power Integrations 1SD536F2-1MBI3600U4D-120

    Gate Drivers ONLY for FUJI 1MBI3600U4D-120 module
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    Power Integrations 1SD536F2-1MBI3600U4D-170

    Gate Drivers ONLY for FUJI 1MBI3600U4D-170 module
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    Richardson RFPD 1SD536F2-1MBI3600U4D-170 1
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    1MBI3600U4D Datasheets Context Search

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    1MBI3600U4D-170

    Abstract: tr 18650 catalog ic inverter welding machine 1MBI3600U4D IC7200 TERMINAL M4 1mbi3600u
    Text: 1MBI3600U4D-170 IGBT Modules IGBT MODULE U series 1700V / 3600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply


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    PDF 1MBI3600U4D-170 1MBI3600U4D-170 tr 18650 catalog ic inverter welding machine 1MBI3600U4D IC7200 TERMINAL M4 1mbi3600u

    1MBI3600U4D-120

    Abstract: tr 18650 18650 TERMINAL M4 1mbi3600u
    Text: 1MBI3600U4D-120 IGBT Modules IGBT MODULE U series 1200V / 3600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply


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    PDF 1MBI3600U4D-120 1MBI3600U4D-120 tr 18650 18650 TERMINAL M4 1mbi3600u

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


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    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    fuji igbt transistor modules

    Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200
    Text: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high


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    PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現!


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    PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120