18N60 Search Results

18N60 Price and Stock

Filter by Manufacturer


STMicroelectronics STB18N60DM2 MOSFET N-CH 600V 12A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB18N60DM2	Cut Tape	1,660		1	1 $3.36 10 $2.192 100 $3.36 1000 $1.24002 10000 $1.24002	Buy Now
	STB18N60DM2	Digi-Reel	1,660		1	1 $3.36 10 $2.192 100 $3.36 1000 $1.24002 10000 $1.24002	Buy Now
	STB18N60DM2	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.14846 10000 $1.14846	Buy Now
Mouser Electronics	STB18N60DM2		1,344			1 $3.03 10 $2.04 100 $1.45 1000 $1.09 10000 $1.07	Buy Now
Newark	STB18N60DM2	Cut Tape	1,648		1	1 $2.77 10 $2.34 100 $1.91 1000 $1.43 10000 $1.43	Buy Now
STMicroelectronics	STB18N60DM2		1,344		1	1 $2.97 10 $2 100 $1.42 1000 $1.17 10000 $1.17	Buy Now
TME	STB18N60DM2				1	1 $2.43 10 $2.01 100 $1.54 1000 $1.3 10000 $1.3	Get Quote

Avnet Silica	STB18N60DM2		2,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip-Germany GmbH	STB18N60DM2		399			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STB18N60DM2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STD18N60M6 MOSFET N-CH 600V 13A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD18N60M6	Digi-Reel	1,612		1	1 $2.25 10 $1.444 100 $2.25 1000 $0.72039 10000 $0.72039	Buy Now
	STD18N60M6	Cut Tape	1,612		1	1 $2.25 10 $1.444 100 $2.25 1000 $0.72039 10000 $0.72039	Buy Now
Mouser Electronics	STD18N60M6		2,387			1 $1.43 10 $1.02 100 $0.814 1000 $0.655 10000 $0.605	Buy Now
STMicroelectronics	STD18N60M6		2,387		1	1 $1.38 10 $1 100 $0.8 1000 $0.68 10000 $0.68	Buy Now
TME	STD18N60M6		2,321		1	1 $2.22 10 $2 100 $1.59 1000 $1.47 10000 $1.47	Buy Now
Avnet Silica	STD18N60M6		2,500	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STD18N60M6			15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STB18N60M2 MOSFET N-CH 600V 13A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB18N60M2	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.03669 10000 $1.03669	Buy Now
Avnet Americas	STB18N60M2	Reel	1,000	16 Weeks	1,000	1 - 10 - 100 - 1000 $0.95 10000 $0.89412	Buy Now
Mouser Electronics	STB18N60M2		1,401			1 $2.26 10 $1.74 100 $1.25 1000 $0.978 10000 $0.95	Buy Now
STMicroelectronics	STB18N60M2		1,501		1	1 $2.22 10 $1.71 100 $1.23 1000 $1.02 10000 $1.02	Buy Now
Avnet Silica	STB18N60M2		4,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STB18N60M2		2,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STB18N60M2		5,970			1 - 10 - 100 $1.2986 1000 $1.0551 10000 $1.0551	Buy Now
Vishay Siliconix SIHA18N60E-GE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA18N60E-GE3	Cut Tape	974		1	1 $4.15 10 $2.732 100 $4.15 1000 $1.58022 10000 $1.58022	Buy Now
STMicroelectronics STP18N60DM2 MOSFET N-CH 600V 12A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP18N60DM2	Tube	880		1	1 $3.34 10 $3.34 100 $3.34 1000 $1.14087 10000 $1.06238	Buy Now
Mouser Electronics	STP18N60DM2		1,390			1 $1.78 10 $1.44 100 $1.18 1000 $1.06 10000 $1.06	Buy Now
STMicroelectronics	STP18N60DM2		1,390		1	1 $1.74 10 $1.41 100 $1.16 1000 $1.05 10000 $1.05	Buy Now
TME	STP18N60DM2				1	1 $2.45 10 $2.2 100 $1.75 1000 $1.63 10000 $1.63	Get Quote
ComSIT USA	STP18N60DM2		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	STP18N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP18N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 18N60 price and stock on Findchips.com

18N60 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
18N-60	Inmet	ATTENUATOR	Scan	PDF
18N-60F	Inmet	ATTENUATOR	Scan	PDF
18N60G-T47-T	Unisonic Technologies	POLARHV HIPERFET POWER MOSFET	Original	PDF
18N60L-T47-T	Unisonic Technologies	POLARHV HIPERFET POWER MOSFET	Original	PDF
18N60-T47-T	Unisonic Technologies	POLARHV HIPERFET POWER MOSFET	Original	PDF

18N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS 18N60P
18N60 Abstract: 18N60G-T47-T 18N60L-T47-T 18N60-T47-T 408M power mosfet 600v Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 O-247 18N60L 18N60G 18N60-T47-T QW-R502-221 18N60G-T47-T 18N60L-T47-T 18N60-T47-T 408M power mosfet 600v
IXTV18N60P Abstract: PLUS220SMD Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	PDF	18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD
Untitled Abstract: No abstract text available Text: IXTQ 18N60P IXTT 18N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 18 A ≤ 400 mΩ Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	PDF	18N60P 18N60P O-268 O-268 405B2
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 O-247 QW-R502-221
PLUS220SMD Abstract: No abstract text available Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS 18N60P PLUS220SMD
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 18N60Lat QW-R502-221
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 O-247 18N60L-T47-T 18N60G-T47-T QW-R502-221
N-channel MOSFET to-247 Abstract: PLUS220SMD Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr = = ≤ ≤ 600 V 18 A Ω 400 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS O-247 PLUS220 15lts N-channel MOSFET to-247 PLUS220SMD
18n60 Abstract: 18N60-T47-T 18N60L-T47-T 18N60G-T47-T Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Preliminary Power MOSFET POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 O-247 18N60L 18N60G 18N60-T47-T QW-R502-221 18N60-T47-T 18N60L-T47-T 18N60G-T47-T
18N60 Abstract: 18N60G-T47-T 18N60L-T47-T Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 O-247 18N60L-T47-T 18N60G-T47-T QW-R502-221 18N60G-T47-T 18N60L-T47-T
18N60P Abstract: PLUS220SMD IXFH18N60P 18N60PS 18N60 Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS	Original	PDF	18N60P 18N60PS 18N60P PLUS220SMD IXFH18N60P 18N60PS 18N60
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	18N60P 18N60PS O-247 PLU30 18N60P
18N60 Abstract: 18N60G-T47-T 18N60L-T47-T mosfet 600V N-CHANNEL power mosfet 600v IAR18 Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is	Original	PDF	18N60 18N60 O-247 18N60L-T47-T 18N60G-T47-T QW-R502-221 18N60G-T47-T 18N60L-T47-T mosfet 600V N-CHANNEL power mosfet 600v IAR18

STP18N60M2 Abstract: No abstract text available Text: 18N60M2, 18N60M2, 18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK	Original	PDF	STB18N60M2, STP18N60M2, STW18N60M2 O-220 O-247 STB18N60M2 STP18N60M2 O-220 O-247 STP18N60M2
18N60M2 Abstract: No abstract text available Text: 18N60M2 045Y N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID 18N60M2(045Y) 650 V 0.28 Ω 13 A • Extremely low gate charge	Original	PDF	STF18N60M2 O-220FP O-220FP DocID024730 18N60M2
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Untitled Abstract: No abstract text available Text: 18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation	Original	PDF	STF18N60M2 O-220FP O-220FP DocID024729
Untitled Abstract: No abstract text available Text: 18N60M2, 18N60M2, 18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 D PAK VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A	Original	PDF	STB18N60M2, STP18N60M2, STW18N60M2 O-220 O-247 STB18N60M2 STP18N60M2 O-220 O-247
Untitled Abstract: No abstract text available Text: 18N60M2 045Y N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features VDS @ TJmax RDS(on) max ID 18N60M2(045Y) 650 V 0.28 Ω 13 A • Extremely low gate charge	Original	PDF	STF18N60M2 O-220FP O-220FP DocID024730
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

Privacy Settings

18N60 Search Results

18N60 Price and Stock

STMicroelectronics STB18N60DM2

STMicroelectronics STD18N60M6

STMicroelectronics STB18N60M2

Vishay Siliconix SIHA18N60E-GE3

STMicroelectronics STP18N60DM2

18N60 Datasheets (5)

18N60 Datasheets Context Search

Untitled

18N60

IXTV18N60P

Untitled

Untitled

PLUS220SMD

Untitled

Untitled

N-channel MOSFET to-247

18n60

18N60

18N60P

Untitled

18N60

STP18N60M2

18N60M2

2n60p

Untitled

Untitled

Untitled

7N60B equivalent

STW20N60