Untitled
Abstract: No abstract text available
Text: SM53616100UP3UU October 1996 Rev 2A SMART Modular Technologies SM53616100UP3UU 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616100UP3UU is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line
|
Original
|
PDF
|
SM53616100UP3UU
SM53616100UP3UU
64MByte
64-megabyte
72-pin,
SM536161002P3UU
SM536161004P3UU
16Mx1
64MByte
|
Untitled
Abstract: No abstract text available
Text: SMART SM5363210U4P5UU Modular Technologies Preliminary 128MByte 32M x 36 DRAM Module - 16Mx1 based 72-pin SIMM, Buffered Features Part Numbers • • • • • • • • • • SM536321004P5UU SM536321014P5UU Configuration : Parity Access Time :
|
Original
|
PDF
|
SM5363210U4P5UU
128MByte
16Mx1
72-pin
SM536321004P5UU
SM536321014P5UU
70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
|
Untitled
Abstract: No abstract text available
Text: SMART SM5361640P4PUUU Modular Technologies March 16, 1998 64MByte 16M x 36 DRAM Module - 16Mx4 based 72-pin SIMM, Parity with Voltage Regulators Features • • • • • • • • • • • Standard : JEDEC (5.0V FPM only) Configuration : Parity
|
Original
|
PDF
|
SM5361640P4PUUU
64MByte
16Mx4
72-pin
50/60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
16Mx9
|
Untitled
Abstract: No abstract text available
Text: SMART SM5363240U4PUUU Modular Technologies October 24, 1997 128MByte 32M x 36 DRAM Module - 16Mx4 based 72-pin SIMM, Parity Features Part Numbers • • • • • • • • • • • SM536324004PUUU SM536324014PUUU Standard : JEDEC (5.0V FPM only)
|
Original
|
PDF
|
SM5363240U4PUUU
128MByte
16Mx4
72-pin
SM536324004PUUU
SM536324014PUUU
50/60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
|
Untitled
Abstract: No abstract text available
Text: SM53632100UP5UU October 1996 Preliminary A SMART Modular Technologies SM53632100UP5UU 128MByte 32M x 36 CMOS DRAM Module General Description Features The SM53632100UP5UU is a high performance, 128-megabyte dynamic RAM module organized as 32M words by 36 bits, in a 72-pin, leadless, single-in-line
|
Original
|
PDF
|
SM53632100UP5UU
SM53632100UP5UU
128MByte
128-megabyte
72-pin,
SM536321002P5UU
SM536321004P5UU
16Mx1
|
Untitled
Abstract: No abstract text available
Text: SMART SM5361640U4PUUU Modular Technologies October 24, 1997 64MByte 16M x 36 DRAM Module - 16Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM536164004PUUU SM536164014PUUU Standard : JEDEC (5.0V FPM only) Configuration
|
Original
|
PDF
|
SM5361640U4PUUU
64MByte
16Mx4
72-pin
SM536164004PUUU
SM536164014PUUU
60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
|
Untitled
Abstract: No abstract text available
Text: SMART SM5361640U4PXUU Modular Technologies December 16, 1998 Revision History • December 16, 1998 Modified DC characteristics on page 4. • August 9, 1998 Datasheet Released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
|
Original
|
PDF
|
SM5361640U4PXUU
64MByte
16Mx4
72-pin
|
Untitled
Abstract: No abstract text available
Text: SMART SM5361640F4P4UU Modular Technologies July 15, 1998 Revision History • July 15, 1998 Modified pin designations on page 2. • April 28, 1998 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
|
Original
|
PDF
|
SM5361640F4P4UU
64MByte
16Mx4
72-pin
|
Untitled
Abstract: No abstract text available
Text: SMART SM5363240P4PUUU Modular Technologies March 16, 1998 128MByte 32M x 36 DRAM Module - 16Mx4 based 72-pin SIMM, Parity with Voltage Regulators Features • • • • • • • • • • • Standard : JEDEC (5.0V FPM only) Configuration : Parity
|
Original
|
PDF
|
SM5363240P4PUUU
128MByte
16Mx4
72-pin
50/60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
16Mx9
|
Untitled
Abstract: No abstract text available
Text: SMART SM5361640U4PLUU Modular Technologies April 24, 1998 64MByte 16M x 36 DRAM Module - 16Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM536164004PLUU SM536164014PLUU Standard : JEDEC (5.0V FPM only) Configuration
|
Original
|
PDF
|
SM5361640U4PLUU
64MByte
16Mx4
72-pin
SM536164004PLUU
SM536164014PLUU
60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
|
Untitled
Abstract: No abstract text available
Text: SM536161002PXSX/4PXSX November 1995 Rev 2 SMART Modular Technologies SM536161002PXSX/4PXSX 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM536161002PXSX/4PXSX is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line
|
Original
|
PDF
|
SM536161002PXSX/4PXSX
SM536161002PXSX/4PXSX
64MByte
64-megabyte
72-pin,
SM536161002PXSX
SM536161004PXSX
16Mx1
74ABT16244)
|
Untitled
Abstract: No abstract text available
Text: SM53616000-6 July 1997 Rev 0 SMART Modular Technologies SM53616000-6 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616000-6 is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
|
Original
|
PDF
|
SM53616000-6
SM53616000-6
64MByte
64-megabyte
72-pin,
16Mx1
396mW
198mW
CM1-9705
|
ca3f
Abstract: No abstract text available
Text: W TSl'BISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM Max. Access time (ns) Type name MH16M09AJ-6 16MX9 ★ 60 MH16M09AJ-7 ★ 70 MH16M09AC J-6 ★ 60 MH16M09ACJ-7 ★ 70 MH16M09ATJ-6 ★ 60 MH16M09ATJ-7 ★ 70 M H16M09AT JA-6 ★ 60 MH16M09ATJA-7 ★
|
OCR Scan
|
PDF
|
16MX9
MH16M09AJ-6
MH16M09AJ-7
MH16M09AC
MH16M09ACJ-7
MH16M09ATJ-6
MH16M09ATJ-7
H16M09AT
MH16M09ATJA-7
M5M4161OOAJ
ca3f
|
irp 540
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The
|
OCR Scan
|
PDF
|
KMM5916000A/AT
16Mx9
KMM5916000A
16Mx1bit
24-pin
30-pin
irp 540
|
|
|
16Mx1bit
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte Preliminary KMM5916000a k Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V ^ Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Samsung KMM5916000AK is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000AK consists of nine CMOS
|
OCR Scan
|
PDF
|
KMM5916000a
16Mx9
KMM5916000AK
16Mx1bit
24-pin
30-pin
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM Type name 16MX9 Max. Access time (ns) MH16M9BDJA-5 50 MH16M9BDJA-6 60 MH16M9BDJA-7 70 MH16M09BTJ-5 50 MH16M09BTJ-6 60 MH16M09BTJ-7 70 I ^t^tM BIT 144i Load memory Outward dimensions Data sheet W x H x D (mm)
|
OCR Scan
|
PDF
|
16MX9
MH16M9BDJA-5
MH16M9BDJA-6
MH16M9BDJA-7
MH16M09BTJ-5
MH16M09BTJ-6
MH16M09BTJ-7
M5M416100BJ
M5M416100BTP
|
dram simm memory module samsung 30-pin 16M
Abstract: No abstract text available
Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin
|
OCR Scan
|
PDF
|
KMM5916100/T
16Mx9
KMM59161QG/T
KM41C16100/T
24-pin
30-pin
KMM5916100/T
KMM5916100-6
KMM5916100-7
dram simm memory module samsung 30-pin 16M
|
GM71C18160AJ7
Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I
|
OCR Scan
|
PDF
|
GM71C1000B-60
GM71C
1OO0BJ-60
1000BZ-60
100OBL-6O
1000BLJ-60
GM71C1000BLZ-60
GM71C18160AJ7
GM71C4260AJ70
GM71C4400BJ60
GM71C4400BJ70
gm71c4100cj60
GM71C1000BJ70
GM76C256ALL-70
GM76C256BLLFW70
GM71C4100BJ70
GM76C88ALFW15
|
"30 pin simm"
Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36
|
OCR Scan
|
PDF
|
KMM53281OOV/VG/VP
KMM5368100G
KMM5368000H/HG
KMM5368100H/HG
KMM5816000T
KMM5816100T
KMM5916000T
KMM5916100T
8Mx32
8Mx36
"30 pin simm"
30-pin simm memory "16m x 8"
KM68512
256K x 8 SRAM dip
30-pin SIMM RAM
30-pin SIMM
30 pin simm
|
1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
|
OCR Scan
|
PDF
|
1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
|
GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
|
OCR Scan
|
PDF
|
GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
|
GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
|
OCR Scan
|
PDF
|
GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
|
KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
|
OCR Scan
|
PDF
|
KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
|
SIMM 1Mx9 30pin
Abstract: simm EDO 72pin KMM51442100ATG KMM532
Text: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16
|
OCR Scan
|
PDF
|
1Mx32
1Mx33
1Mx36
KMM581000CN
KMM5B1020CN
KMM591000CN
KMM591020CN
KMM5321000CV/CVG
KMM5331000C/CG
KMM5361000C2/C2G
SIMM 1Mx9 30pin
simm EDO 72pin
KMM51442100ATG
KMM532
|