HYM72V16M636AT6
Abstract: RA12
Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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16Mx64
PC133
16Mx16
HYM72V16M636AT6
16Mx64bits
16Mx16bits
400mil
54pin
168pin
RA12
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RA12
Abstract: No abstract text available
Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The Hyundai HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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32Mx64
PC133
16Mx16
HYM72V32M636T6
32Mx64bits
16Mx16bits
400mil
54pin
168pin
RA12
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Untitled
Abstract: No abstract text available
Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
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32Mx64bits
PC100
16Mx16
HYM72V32M656B
32Mx64bits
16Mx16bits
400mil
54pin
144pin
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pc133 SDRAM DIMM package
Abstract: HYM72V32M636BT6-H
Text: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
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32Mx64bits
PC133
16Mx16
HYM72V32M636B
32Mx64bits
16Mx16bits
400mil
54pin
144pin
pc133 SDRAM DIMM package
HYM72V32M636BT6-H
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RA12
Abstract: HYM72V32M736BLT6-H
Text: 32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B L T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board.
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32Mx72bits
PC133
16Mx16
HYM72V32M736B
32Mx72bits
16Mx16bits
400mil
54pin
144pin
RA12
HYM72V32M736BLT6-H
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HYM72V16M656BTU6
Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656BTU6
8Mx64bits
16Mx16bits
400mil
54pin
144pin
HYM72V16M656TU6-8
HYM72V16M656TU6-P
HYM72V16M656TU6-S
RA12
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Untitled
Abstract: No abstract text available
Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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32Mx64
PC133
16Mx16
HYM72V32M636T6
32Mx64bits
16Mx16bits
400mil
54pin
168pin
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636B L T6 Series DESCRIPTION The HYM72V16M636B(L)T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy
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16Mx64
PC133
16Mx16
HYM72V16M636B
16Mx64bits
16Mx16bits
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mb
16Mx16bit)
111Preliminary
256Mbit
HY5V56F
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hynix nand spare area
Abstract: hy27us08561 HY27US HY27US08561M HY27US16561M hynix nand flash controller reset nand flash HYNIX HY27xSxx121mTxB
Text: HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary 0.1 Renewal Product Group
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HY27SS
HY27US
256Mbit
32Mx8bit
16Mx16bit)
256Mb
hynix nand spare area
hy27us08561
HY27US08561M
HY27US16561M
hynix nand flash controller
reset nand flash HYNIX
HY27xSxx121mTxB
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Untitled
Abstract: No abstract text available
Text: 64MB 90PIN PC133 CL3 SDRAM SO-DIMM With 16M X 16 3.3VOLT TS64MEP6100 Placement Description The TS64MEP6100 is a 16M bit x 32 Synchronous Dynamic RAM high-density memory modules. The TS64MEP6100 consists of 2 pieces of CMOS 16Mx16bits A Synchronous DRAMs in TSOP-II 400mil packages on a
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90PIN
PC133
TS64MEP6100
TS64MEP6100
16Mx16bits
400mil
90-pin
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Untitled
Abstract: No abstract text available
Text: 168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Placement Description The TS32MLS64V6G is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. The TS32MLS64V6G consists of 8 piece of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages and a
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168PIN
PC133
256MB
16Mx16
TS32MLS64V6G
TS32MLS64V6G
16Mx16bits
400mil
168-pin
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HY57V561620F
Abstract: HY57V561620FTP HY57V561620FTP-HI HY57V561620FTP-H
Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mb
16Mx16bit)
111Preliminary
256Mbit
HY57V561620F
HY57V561620FTP
HY57V561620FTP-HI
HY57V561620FTP-H
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HY57V561620F
Abstract: HY57V561620FTP HY57V561620FTP-HI hy57v56 HY57V561620FLTP-6 HY57V561620FTP-6I Hynix sdram HY57V561620
Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mb
16Mx16bit)
256Mbit
HY57V561620F
Page15)
A0-A12
HY57V561620FTP
HY57V561620FTP-HI
hy57v56
HY57V561620FLTP-6
HY57V561620FTP-6I
Hynix sdram
HY57V561620
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 128MB With 16Mx16 CL3 TS16MSS64V6G Description Features The TS16MSS64V6G is a 16M bit x 64 Synchronous Dynamic • RoHS compliant products. RAM high-density memory module. The TS16MSS64V6G • Performance Range: PC133. consists of 4 piece of CMOS 16Mx16bits Synchronous DRAMs
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144PIN
PC133
128MB
16Mx16
TS16MSS64V6G
TS16MSS64V6G
PC133.
16Mx16bits
400mil
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Untitled
Abstract: No abstract text available
Text: 168PIN PC133 Unbuffered DIMM 128MB with 16Mx16 CL3 TS16MLS64V6G Placement Description The TS16MLS64V6G is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MLS64V6G consists of 4 piece of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages and a
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168PIN
PC133
128MB
16Mx16
TS16MLS64V6G
TS16MLS64V6G
16Mx16bits
400mil
168-pin
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RA12
Abstract: No abstract text available
Text: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
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32Mx64bits
PC133
16Mx16
HYM72V32M636B
32Mx64bits
16Mx16bits
400mil
54pin
144pin
RA12
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RA12
Abstract: No abstract text available
Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy
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32Mx64bits
PC100
16Mx16
HYM72V32M656B
32Mx64bits
16Mx16bits
400mil
54pin
144pin
RA12
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HYM72V16M636LT6
Abstract: RA12 hyundai chip id
Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636TU6 Series DESCRIPTION The Hyundai HYM72V16M636TU6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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16Mx64
PC133
16Mx16
HYM72V16M636TU6
16Mx64bits
16Mx16bits
400mil
54pin
168pin
HYM72V16M636LT6
RA12
hyundai chip id
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Untitled
Abstract: No abstract text available
Text: 16Mx72 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M736BFU6 Series DESCRIPTION The HYM72V16M736BFU6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of five 16Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin
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16Mx72
PC133
16Mx16
HYM72V16M736BFU6
16Mx72bits
16Mx16bits
54ball
144pin
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary
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PDF
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HY27SS
HY27US
256Mbit
32Mx8bit
16Mx16bit)
256Mb
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary
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HY27SS
HY27US
256Mbit
32Mx8bit
16Mx16bit)
256Mb
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hy27us08561A
Abstract: hy27us08561 HY27 HY27US 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
Text: HY27US 08/16 561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Apr. 04. 2005 Preliminary
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HY27US
HY27SS
256Mbit
32Mx8bit
16Mx16bit)
256Mb
hy27us08561A
hy27us08561
HY27
48pin-USOP1
hynix hy27
HY27USXX561A
16Mx16Bit
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HY57V561620FTP-H
Abstract: HY57V561620FLTP-6
Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mb
16Mx16bit)
256Mbit
HY57V561620F
256Mbit
HY57V561620FTP-H
HY57V561620FLTP-6
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