IBM038329PQ6256
Abstract: IBM038329NQ6256
Text: IBM038329PQ6256 x 16FP, 2WE. IBM038329NQ6256 x 16EDO, 2WE. Preliminary IBM038329PQ6 IBM038329NQ6 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on positive edge of system clock. • Internal pipelined operation; column address
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IBM038329PQ6256
IBM038329NQ6256
16EDO,
IBM038329PQ6
IBM038329NQ6
100Mhz
cycles/16ms
cycles/128msined
MMDV03DSU-01
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015161LJ3A-50
Abstract: IBM015160256 IBM015161256
Text: IBM015160256 x 16FP, 2WE. IBM015161256 x 16EDO, 2WE. IBM015160 IBM015161 256K X 16 DRAM Features • 256K x 16 DRAM • 66MHz EDO performance • Performance: • Non-Persistent WPBM mode Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CE
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IBM015160256
IBM015161256
16EDO,
IBM015160
IBM015161
66MHz
110ns
SOJ-40
015161LJ3A-50
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diode Lz 66
Abstract: IBM038329NQ6256 IBM038329PQ6256 IBM038329NP6B
Text: IBM038329PQ6256 x 16FP, 2WE. IBM038329NQ6256 x 16EDO, 2WE. IBM038329NL6B IBM038329NP6B 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on positive edge of system clock. • Internal pipelined operation; column address
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IBM038329PQ6256
IBM038329NQ6256
16EDO,
IBM038329NL6B
IBM038329NP6B
cycles/16ms
diode Lz 66
IBM038329NP6B
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IBM025161
Abstract: IBM025161LG5D-6 BM025 IBM025161LG5D-6H IBM025170 ibm025161lg5d-60 ibm025171 IBM025161LG5D60 IBM025170LG5D-60 IBM025171NG5D-60
Text: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:
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IBM025160256
IBM025171256
16EDO,
IBM025170256
IBM025161256
IBM025160
IBM025170
IBM025161
IBM025171
IBM025161LG5D-6
BM025
IBM025161LG5D-6H
IBM025170
ibm025161lg5d-60
ibm025171
IBM025161LG5D60
IBM025170LG5D-60
IBM025171NG5D-60
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IBM025161LG5D60
Abstract: vram dual port IBM025161 IBM025170 "Video RAM" BM025 ibm025170lg5 IBM025161LG5D-6H IBM025171256 IBM025160256
Text: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:
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IBM025160256
IBM025171256
16EDO,
IBM025170256
IBM025161256
IBM025160
IBM025170
IBM025161
IBM025171
IBM025161LG5D60
vram dual port
IBM025161
IBM025170
"Video RAM"
BM025
ibm025170lg5
IBM025161LG5D-6H
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IBM025160
Abstract: IBM025160256 IBM025161 IBM025161256 IBM025170256 IBM025171256 IBM025171N
Text: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:
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IBM025160256
IBM025171256
16EDO,
IBM025170256
IBM025161256
IBM025160
IBM025170
IBM025161
IBM025171
IBM025160
IBM025161
IBM025171N
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5116 ram
Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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16-Bit
HYB5116165BSJ
HYB5118165BSJ
HYB5118165BSJ-50)
HYB5118165BSJ-60)
HYB51181
165BSJ-50/-60/-70
16-EDO
P-SOJ-42
5116 ram
HYB5118165BSJ-50
HYB5116165BSJ-50
HYB5116165BSJ-60
HYB5116165BSJ-70
HYB5118165BSJ-60
HYB5118165BSJ-70
TRAC-70
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5116 ram
Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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16-Bit
HYB5116165BSJ
HYB5118165BSJ
HYB5118165BSJ-50)
HYB5118165BSJ-60)
HYB51181
165BSJ-50/-60/-70
16-EDO
P-SOJ-42
5116 ram
Q67100-Q1107
HYB5116165BSJ-50
HYB5116165BSJ-60
HYB5116165BSJ-70
HYB5118165BSJ-50
HYB5118165BSJ-60
HYB5118165BSJ-70
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Untitled
Abstract: No abstract text available
Text: M O S E L VITELIC V53C16258L H IG H PERFORMANCE 3 .3 VOLT2 5 6 K X 16EDO PAG E M ODE CMOS DYNAMIC RAM PRELIM INARY 40 45 50 60 Max. RAS Access Time, Irac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (^ aa) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (1pC)
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V53C16258L
16EDO
16-bit
40-pin
40/44L-pin
V53C16258L
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )
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16-Bit
Y//77777/
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mt4lc4m16r6
Abstract: No abstract text available
Text: PRELIMINARY 4 M E G x 16 EDO DRAM I^ IIC R D N MT4LC4M16R6 DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x l6 pinout, timing, functions and package • 12 row, 10 column addresses • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-compatible
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096-cycle
MT4LC4M16R6
50-Pin
MT4LC4M16R6TG-5
mt4lc4m16r6
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5116 RAM
Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)
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16-Bit
5116165BSJ
5118165BSJ
HYB3118165BSJ-50)
HYB3118165BSJ-60)
I/01-I/016
16-EDO
777777yÃ
5116 RAM
bsj7
siemens fog
mug 14 431
TNC 24 mk 2
HYB3116165BSJ-50
HYB3116165BSJ-60
HYB3116165BSJ-70
HYB3118165BSJ-50
HYB3118165BSJ-60
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)
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HYB3116165BSJ-60)
HYB3116165BSJ-70)
HYB5118165BSJ
HYB5116165BSJ
35b05
DG71b30
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time
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OCR Scan
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PDF
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16-Bit
5116165BSJ
5118165BSJ
5118165BSJ-50)
5118165BSJ-60)
5118165BSJ-7EDO
E35hQ5
165BSJ-50/-60/-70
16-EDO
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