Untitled
Abstract: No abstract text available
Text: MEMORY 1 M x 16 BIT HYPE:R pAGE M 0 DE DY NAMIIC R A M MB81 16165B -5 0/-6i0=^ • W l m m r V r R 1 ■ w V r V r . \ r / V CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM ■ DESCRIPTION The Fujitsu 16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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16165B
MB8116165B
16-bit
F9712
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lrct
Abstract: B77S
Text: ProUm m &Ty S p n a . MITSUBISHI LSIs 16165BJ,TP-6,-7,-8,-6S,-7S,-8S HYPEFl PAGE MODE 16777216-BIT 1048576-W QRD BY 16-BIT DYNAMIC RAM P IN C O N F IG U R A T IO N (T O P V IE W ) D E S C R IP T IO N T h is is a ta m ily o f 1 0 4 8 5 7 6 -v o r d
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M5M4V16165BJ
16777216-BIT
048576-W
16-BIT
lrct
B77S
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Untitled
Abstract: No abstract text available
Text: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3
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0A-60L
8160A
B81V16160B-50
B81V16160B-60
16160B-50L
16160B-60L
18160B-50
B81V1816CB-60
B-50L
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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d8430
Abstract: 18165BSJ-60 BST60
Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 16165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time
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16-Bit
3116165BSJ/BST
-5Q/-60/-70
3118165BSJ/BST
3118165BSJ/BST-50)
3118165BSJ/BST-60)
3118165BSJ/BST-70)
3116165BSJ/BST-50)
3116165BSJ/BST-60)
d8430
18165BSJ-60
BST60
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Untitled
Abstract: No abstract text available
Text: 16165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-372A Z Preliminary Rev. 1.0 Dec. 15, 1995 Description The Hitachi 16165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 16165B offers
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HM51W16165B
1048576-word
16-bit
ADE-203-372A
576-word
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: 16165B Series HM51W18165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-541 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi 16165B Series, HM51W18165B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS
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HM51W16165B
HM51W18165B
1048576-word
16-bit
ADE-203-541
576-word
16-bit.
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SIEMENS BST
Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 16165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC
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16-Bit
3116165BSJ/BST
3118165BSJ/BST
3118165BSJ/BST-50)
3118165BSJ/BST-60)
165BSJ/BST
SIEMENS BST
SIEMENS BST t
SIEMENS BST h 35
SIEMENS BST L 35 90
BST70
BST60
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TC51V
Abstract: TC51V16165BFT-70
Text: TOSHIBA m C|C1Ci7E4fl D02fi3flfl T07 m 16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The T C 5 1 V 1 6 1 65B F T is th e H yper P age M o d e (EDO) d yn am ic RAM organized 1 ,0 4 8 ,5 7 6 w o rd s by 16 bits. The TC 5 1 V 1 6 1 6 5 B F T utilizes Toshiba's C M O S silicon g a te p ro ce ss te c h n o lo g y as well as a d vanced circuit te ch n iq u e s to provide
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D02fi3flfl
TC51Y16165BFT-70
TC51V16165BFT
B-136
DR16180695
TC51V16165B
FT-70
B-137
TC51V
TC51V16165BFT-70
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Untitled
Abstract: No abstract text available
Text: TOSHIBA m E|[lcJ7EL4fl D02fl3ûfl T07 • 16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The 16165BFT is the Hyper Page M ode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The 16165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide
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D02fl3Ã
TC51V16165BFT-70
TC51V16165BFT
B-136
DR16180695
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