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Rochester Electronics LLC T4160NSN7PQB QORIQ, 64B POWER ARCH, 16X 1.5GH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T4160NSN7PQB	Bulk			1	1 $832.94 10 $832.94 100 $832.94 1000 $832.94 10000 $832.94	Buy Now
NXP Semiconductors T4160NSN7PQB IC MPU QORIQ T4 1.8GHZ 1932BGA
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DigiKey	T4160NSN7PQB	Bulk			12	1 - 10 - 100 $815.99585 1000 $815.99585 10000 $815.99585	Buy Now
Avnet Americas	T4160NSN7PQB	Tray		18 Weeks	12	1 - 10 - 100 $697.7426 1000 $697.7426 10000 $697.7426	Buy Now
Mouser Electronics	T4160NSN7PQB					1 - 10 - 100 $769.31 1000 $769.31 10000 $769.31	Get Quote
Newark	T4160NSN7PQB	Bulk			12	1 - 10 $801.54 100 $755.41 1000 $755.41 10000 $755.41	Buy Now
Rochester Electronics	T4160NSN7PQB		60		1	1 $800.9 10 $800.9 100 $752.85 1000 $680.77 10000 $680.77	Buy Now

Avnet Silica	T4160NSN7PQB			20 Weeks	12	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	T4160NSN7PQB			20 Weeks	12	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors T4160NSE7PQB IC MPU QORIQ T4 1.8GHZ 1932BGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T4160NSE7PQB	Bulk			12	1 - 10 - 100 $857.6983 1000 $857.6983 10000 $857.6983	Buy Now
Avnet Americas	T4160NSE7PQB	Tray		18 Weeks	12	1 - 10 - 100 $734.4448 1000 $734.4448 10000 $734.4448	Buy Now
Mouser Electronics	T4160NSE7PQB					1 - 10 - 100 $799.48 1000 $799.48 10000 $799.48	Get Quote
Newark	T4160NSE7PQB	Bulk			12	1 - 10 $843.71 100 $795.15 1000 $795.15 10000 $795.15	Buy Now
Avnet Silica	T4160NSE7PQB			20 Weeks	12	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC T4160NSE7QTB QORIQ, 64B POWER ARCH, 16X 1.67G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T4160NSE7QTB	Bulk			1	1 $1095.97 10 $1095.97 100 $1095.97 1000 $1095.97 10000 $1095.97	Buy Now
	T4160NSE7QTB	Bulk			1	1 $1095.97 10 $1095.97 100 $1095.97 1000 $1095.97 10000 $1095.97	Buy Now
NXP Semiconductors T4160NSE7QTB IC MPU QORIQ T4 1.8GHZ 1932BGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T4160NSE7QTB	Tray			12	1 - 10 - 100 $1065.7042 1000 $1065.7042 10000 $1065.7042	Buy Now
Avnet Americas	T4160NSE7QTB	Tray		18 Weeks	12	1 - 10 - 100 $918.0894 1000 $918.0894 10000 $918.0894	Buy Now
Mouser Electronics	T4160NSE7QTB					1 - 10 - 100 $948.43 1000 $948.43 10000 $948.43	Get Quote
Newark	T4160NSE7QTB	Bulk			12	1 - 10 $1054.67 100 $993.97 1000 $993.97 10000 $993.97	Buy Now
Rochester Electronics	T4160NSE7QTB		83		1	1 $1053.82 10 $1053.82 100 $990.59 1000 $895.75 10000 $895.75	Buy Now

Avnet Silica	T4160NSE7QTB			20 Weeks	12	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	T4160NSE7QTB		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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160NS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
200n60 Abstract: robot control Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	200N60B 160ns 227TM 728B1 200n60 robot control
Datasheet CD4008 Abstract: cd4008 CD4008BMS IOH15 Text: CD4008BMS S E M I C O N D U C T O R CMOS 4-Bit Full Adder With Parallel Carry Out November 1994 Features Pinout • High-Voltage Type 20V Rating CD4008BMS TOP VIEW • 4 Sum Outputs Plus Parallel Look-ahead Carry-Output • High-Speed Operation - Sum In-To-Sum Out, 160ns	Original	PDF	CD4008BMS 160ns 100nA Datasheet CD4008 cd4008 CD4008BMS IOH15
Untitled Abstract: No abstract text available Text: Memory Module Specifications KHX1600C9D3K4/16GX 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)	Original	PDF	KHX1600C9D3K4/16GX 64-Bit DDR3-1600 240-Pin 160ns KHX1600C9D3K4/16GX 64-bit
Untitled Abstract: No abstract text available Text: Advance Technical Information IXFH160N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 150V 160A Ω 9.0mΩ 160ns TO-247 Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	PDF	IXFH160N15T2 160ns O-247 160N15T2 4-10-A
Untitled Abstract: No abstract text available Text: Memory Module Specifications KHX1866C9D3/4G 4GB 512M x 64-Bit DDR3-1866 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin) 36ns (min.)	Original	PDF	KHX1866C9D3/4G 64-Bit DDR3-1866 240-Pin 160ns 64-bit
Untitled Abstract: No abstract text available Text: Memory Module Specifications KHX16C9B1B/4 4GB 512M x 64-Bit DDR3-1600 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin) 36ns (min.)	Original	PDF	KHX16C9B1B/4 64-Bit DDR3-1600 240-Pin 160ns 64-bit DDR3-1600
Untitled Abstract: No abstract text available Text: High-Speed Load Response, Non-Isolated Type POL DC-DC Converter Ultra Small Size, Able to drive the Latest Digital LSI with High-Speed Load Response! NEW RoHS BELLNIX Compliance High Response T=160ns 12A BSV-H Series High accuracy Output Accuracy ±1 High-Speed Load Response, Step Down DC-DC Converter	Original	PDF	160ns 5S12R0H BDD2008
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	200N60B 160ns 227TM IXGN200N60B 405B2
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH150N17T2 IXFT150N17T2 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 175V 150A Ω 12.0mΩ 160ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings	Original	PDF	IXFH150N17T2 IXFT150N17T2 160ns O-247 150N17T2
Untitled Abstract: No abstract text available Text: BELLNIX High Speed Load Response, Non-isolated Type POL DC-DC Converter NEW RoHS BELLNIX Compliance Fast response High accuracy T=160ns ±１％ Low Cost Ultra small type and responds to latest Digital LSI 9.5A BSV-HE Series High speed response, Output accuracy ±1% step down DC-DC converter	Original	PDF	160ns C147F C222F
XBM-DN32S Abstract: Keyence PLC KV 40 R XBE-DC32A XBM-DN16S Keyence PLC KV 40 T XBE-DC16A basic plc ladder diagram PLC S7 200 use encoder siemens S7-200 cpu 224xp XBM-DR16S Text: LS new compact-type Programmable Logic Controller XGB series LS PLC XGB series 1. Main Feature High Performance CPU processing speed : 160ns / Step Max. 480 I/O control with 64-point I/O: soon to be released Max. 10K Step program capacity Expanded application with floating-point arithmetic	Original	PDF	160ns 64-point S7-200 224XP) K120S XBF-DV04A XBF-AM03A XBF-RD04A XBF-TC04A DC24V XBM-DN32S Keyence PLC KV 40 R XBE-DC32A XBM-DN16S Keyence PLC KV 40 T XBE-DC16A basic plc ladder diagram PLC S7 200 use encoder siemens S7-200 cpu 224xp XBM-DR16S
ddr3 Abstract: No abstract text available Text: Memory Module Specifications KHX1600C9D3K3/12GX 12GB 4GB 512M x 64-Bit x 3 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)	Original	PDF	KHX1600C9D3K3/12GX 64-Bit DDR3-1600 240-Pin 160ns KHX1600C9D3K3/12GX 64bit ddr3
DDR3-2400 Abstract: Kingston 16gb Text: Memory Module Specifications KHX24C11K4/16X 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-2400 CL11 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)	Original	PDF	KHX24C11K4/16X 64-Bit DDR3-2400 240-Pin 160ns KHX24C11K4/16X 64-bit CL11-12-12 Kingston 16gb
SODIMM DDR3 Mechanical Dimensions Abstract: SODIMM ddr3 8gb DDR3 Mechanical Dimensions DDR3 SDRAM Document ddr3 so-dimm 204 Text: Memory Module Specifications KHX1600C9S3K2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1600 CL9 204-Pin SODIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)	Original	PDF	KHX1600C9S3K2/8GX 64-Bit DDR3-1600 204-Pin 160ns KHX1600C9S3K2/8GX 64-bit DDR3-1600MHz DDR3-1333 CL7-7-7-20 SODIMM DDR3 Mechanical Dimensions SODIMM ddr3 8gb DDR3 Mechanical Dimensions DDR3 SDRAM Document ddr3 so-dimm 204

Untitled Abstract: No abstract text available Text: Memory Module Specifications KHX1333C9D3B1K2/8G 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1333 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)	Original	PDF	KHX1333C9D3B1K2/8G 64-Bit DDR3-1333 240-Pin 160ns KHX1333C9D3B1K2/8G 64-bit
IXFH150N17T2 Abstract: IXFT150N17T2 ixfh150n17t Text: Advance Technical Information IXFH150N17T2 IXFT150N17T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 175V 150A Ω 12.0mΩ 160ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings	Original	PDF	IXFH150N17T2 IXFT150N17T2 160ns O-247 150N17T2 IXFH150N17T2 IXFT150N17T2 ixfh150n17t
SODIMM DDR3 Mechanical Dimensions Abstract: No abstract text available Text: Memory Module Specifications KHX1333C7S3K2/4G 4GB 2GB 256M x 64-Bit x 2 pcs. DDR3-1333 CL7 204-Pin SODIMM Kit SPECIFICATIONS CL(IDD) 7 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)	Original	PDF	KHX1333C7S3K2/4G 64-Bit DDR3-1333 204-Pin 160ns KHX1300C7S3K2/4G 64-bit DDR3-1333MHz DDR3-1333< SODIMM DDR3 Mechanical Dimensions
Untitled Abstract: No abstract text available Text: High-Speed Load Response, Non-Isolated Type POL DC-DC Converter RoHS Compliance Ultra Small Size, Able to drive the Latest Digital LSI with High-Speed Load Response! High Response T=160ns 12A BSV-H Series Output Accuracy ±3 High-Speed Load Response, Step Down DC-DC Converter	Original	PDF	160ns 3S12R0H BDD2008
DSP320C10I Abstract: DSP320C10 DSP320C10-25 dsp32010 Pin Diagram of ic MC 4086 DSP320 dps320 Text: MICROCHIP TECHNOLOGY INC OS D • Microchip blD3201 DDD4DflS t ■_ DSP320C10 CMOS Digital Signal Processor FEATURES: ■ ■ ■ ■ ■ 160ns instruction cycle max 144 word on-chip data RAM ROMIess version-DSP320C10 1.5K word on-chip program ROM - DSP320CM10	OCR Scan	PDF	blD3201 DSP320C10 160ns version-DSP320C10 DSP320CM10 16-bit 32-bit 160ns 15-bit DSP320C10I DSP320C10 DSP320C10-25 dsp32010 Pin Diagram of ic MC 4086 DSP320 dps320
La 7676 Abstract: No abstract text available Text: CD4008BMS S3 H Ä ls a s CMOS 4-Bit Full Adder With Parallel Carry Out Decem ber 1992 Pinout Features CD4008BMS TOP VIEW • High-Voltage Type 20V Rating • 4 Sum Outputs Plus Parallel Look-ahead Carry-Output • High-Speed Operation - Sum In-To-Sum Out, 160ns	OCR Scan	PDF	CD4008BMS 160ns 100nA La 7676
Untitled Abstract: No abstract text available Text: Semiconductor CD4008BMS C M O S 4-B it Full A d d er W ith Parallel C arry O ut November 1994 Pinout Features • High-Voltage Type 20V Rating CD4008BM S TOP VIEW • 4 Sum Outputs Plus Parallel Look-ahead Carry-Output • High-Speed Operation - Sum In-To-Sum Out, 160ns	OCR Scan	PDF	CD4008BMS CD4008BM 160ns 100nA
Ci 4008 HCF Abstract: HCF4008BC1 Ci 4008 HCC4008BF Text: r= Z S G S -T H O M S O N » M i L i O T i s * ! H C C / H C F 4 0 0 8 B 4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT • 4 SUM OUTPUTS PLUS PARALLEL LOOKAHERD CARRY-OUTPUT ■ HIGH-SPEED OPERATION-SUM IN-TO-SUM O UT 160ns (typ. : CARRY IN-TO-CARRY OUT 50ns (typ.) AT V d d = 10V, C l = 50pF	OCR Scan	PDF	160ns 10OnA HCC4008BF HCF400 245os l60ns HCC/HCF4008B Ci 4008 HCF HCF4008BC1 Ci 4008
Sj31 Abstract: No abstract text available Text: Æ J S G S T H O M S O N K E M I I L i e r a W l g i H C C / H C F 4 8 B 4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT . 4 SUM OUTPUTS PLUS PARALLEL LOOKAHERD CARRY-OUTPUT • HIGH-SPEED OPERATION-SUM IN-TO-SUM OUT 160ns typ. : CARRY IN-TO-CARRY OUT 50ns (typ.) AT V dd = 10 V , C l = 50pF	OCR Scan	PDF	160ns 100nA HCC4008BF HCF4008BIN. ------------------------------------P013H 7R2T237 HCC/HCF4008B PLCC20 Sj31
jeida dram 88 pin Abstract: STI321000C2 Text: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic	OCR Scan	PDF	STI321000C2-xxV STI3210O0C2-60 STI321000CZ-70 STI3210OOC2-8O 120ns 140ns 160ns 88-PIN STI321000C2 jeida dram 88 pin

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160NS Search Results

160NS Price and Stock

Rochester Electronics LLC T4160NSN7PQB

NXP Semiconductors T4160NSN7PQB

NXP Semiconductors T4160NSE7PQB

Rochester Electronics LLC T4160NSE7QTB

NXP Semiconductors T4160NSE7QTB

160NS Datasheets Context Search

200n60

Datasheet CD4008

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XBM-DN32S

ddr3

DDR3-2400

SODIMM DDR3 Mechanical Dimensions

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IXFH150N17T2

SODIMM DDR3 Mechanical Dimensions

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DSP320C10I

La 7676

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Ci 4008 HCF

Sj31

jeida dram 88 pin