Untitled
Abstract: No abstract text available
Text: Product Specification 108-1422 15Jul08 Rev E Surface Mount Matched Impedance Connector 1. SCOPE 1.1. Content | This specification covers performance, tests and quality requirements for the Tyco Electronics Surface Mount Matched Impedance Connector MICTOR for board to board applications using two design
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15Jul08
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1081-4-2
Abstract: No abstract text available
Text: 501-252 Qualification Test Report 15Jul08 Rev C Surface Mount Matched Impedance Connector 1. INTRODUCTION 1.1. Purpose | | Testing was performed on the Tyco Electronics Surface Mount, Matched Impedance Connector MICTOR* to determine its conformance to the requirements of Product Specification 108-1422 Rev. E.
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15Jul08
24Sep97
13Dec98.
1081-4-2
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Part Marking STMicroelectronics TSSOP8
Abstract: M95256
Text: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes
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M95256-W
M95256-R
M95256-DR
M95256-DF
256-Kbit
M95256-W
M95256DR
M95256-DF
200-year
Part Marking STMicroelectronics TSSOP8
M95256
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ansi-y14.5m-1994
Abstract: 74333 DG2517
Text: DG2517, DG2518 Vishay Siliconix 3-Ω, High Bandwidth, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2517, DG2518 are low-voltage dual single-pole/ double-throw monolithic CMOS analog switches. Designed to operate from 1.8 V to 5.5 V power supply, the DG2517,
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DG2517,
DG2518
DG2518
ansi-y14.5m-1994
74333
DG2517
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Untitled
Abstract: No abstract text available
Text: 77\&ifc REO SLEEVE ë fë n -2 /. M W AY/tt -S f T - 1 Ml/iATIQIiPtA JK ¿ IZ h l 10 3 L 5 *2<é> - 8 ITISO^ I C1 REVISED ECR-05-006866 Y.Y I D.M ~ 9 '¿tu »M M 0 3 0 -1 2-, ¿>3 ~ 3 . O- > # 15JUL ’05 « ¡ ^ m a t s f i a T . " ' È -3 'S . 7 9 E
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71509I
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Untitled
Abstract: No abstract text available
Text: r ” 1 1 I 2 RECOMMENDED HOLE PATTERN POS 1 POS 2 NOTE 2 ROW B .200 5 . 08 MAX ROW A 1 , 02 TYP PO S 2 1 NDTE 2 T O L , NDN-ACCUM , A A NDTE 3— •NOTE 5 / X ./ \ nr NO TE 6 v7 mot'l. code NOTE 1 tolerances unless otherwise specified 1/23/8S linear S.LOW 15JUL96
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1/23/8S
15JUL96
15JUL96
1SJUL96
15JUL
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Untitled
Abstract: No abstract text available
Text: 4 THIS ORAWING IS UNPUBLISHED. COPYRIGHT | | RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 3 I AUG .2006. LOC ALL RIGHTS RESERVED. R E V ISIO N S DW P LTR DESCRIPTION F1 ACCEPTED DATE OWN BH WK 15JUL09 REVISED EC R— 0 9 —0 1 5 8 9 8 APVD
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15JUL09
336mm
182mm
600mm
590mm
603mm
371mm
240mm
31MAR2000
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GR-1217-CORE
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S 00 CONTACT DESCRIPTION LTR REV PER EC 0S1 2 - 0 3 1 8 - 0 4 DATE DWN APVD 15JUL05 BC GS DIMENSION
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TR-NWT-001217
31MAR2000
15JUL05
GR-1217-CORE
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR DESCRIPTION REVISED PER DATE EC 0 S 1 4 - 0 4 5 6 - 0 4 APVD DWN 15JULY05 BM JL F O R U S E WI T H, I N T E R C O M P R G - 1 1 / U T Y P E C A B L E ,
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15JULY05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R AW IN G S U N P U B L IS H E D . CO PYR IG H T R E LE A S E D FO R PU B LIC A TIO N BY ^ C O EDECTRO NICS CO RPO RATIO N . R EVISIONS A L L R IG H T S R E S E R V E D . G LTR D E S C R IP T IO N DATE 15JUL09 REV PER ECR 0 9 - 0 2 6 4 7 2
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15JUL09
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. 2 3 1 RELEASED FOR PUBLICATION Y TYCO ELECTRONICS CORPORATION. L INTERNATIONAL RIGHTS RESERVED. DESCRIPTION 15JUL09 HMR CR REVISED PER E C Q -0 9 -0 1 6430 O PT IO N A L MO UN TIN G HO LES 0 4 .1 1 [ 0 . 1 6 2 ] THR U ^ P 2 PLC
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ECO-09-016430
15JIJL09
UL94V-0
POB3A15S
P0B3A18S
PCB3A06S
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Untitled
Abstract: No abstract text available
Text: 4 THIS 3 DRAWING IS UNPUBLISHED. COPYRIGHT 2009 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 AUG .2 0 0 6 . R E V IS IO N S ALL RIGHTS RESERVED. p LTR DESCRIPTION A D non REVISED. ECR—0 9 —01 6224 DATE DWN APVD 15JUL09 FY WK D & 0 0 .9 2 + 0 .0 5
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15JUL09
762/zm
048/rm
27/xm
APA46
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION LOC CM ALL RIGHTS RESERVED. By - REVISIONS D IS T 00 LTR DESCRIPTION REVISED PER DATE DWN HMR SM 15JUL1 1 ECO-11-013373 APVD D D C C TYP [.5 2 0 ] L L B MATERIAL: Û CON N ECTOR-NYLON U L 9 4 V - 2 WHITE .
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ECO-11-013373
15JUL1
--DEC--2004
--DEC--2004
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Untitled
Abstract: No abstract text available
Text: 37.20 AMP LOGO 32.51 R0.64 2 PLC 27.43 D 03.05 2 PLC + R2.54 2 PLC RECOMMENDED PANEL CUTOUT 32.51 NOTES: 1. MATERIAL: HOUSING: THERMOPLASTIC, UL 9 4 V - 0 RATED, COLOR: IVORY. CONTACT: PHOSPHOR BRONZE, THICKNESS=0.3mm. SHELL: SPCC-SD, THICKNESS=0.5mm. HOOK: BRASS, THICKNESS=0.5mm.
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SPEC10
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TSTS710
Abstract: No abstract text available
Text: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack age. Their glass lenses provide a very high radiant
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TSTS710.
D-74025
15-Jul-96
TSTS710
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telefunken ha 880
Abstract: No abstract text available
Text: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.
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TSHA620
TSHA620.
TSHA520.
I5-JuI-96
15-JuI-96
telefunken ha 880
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LT 5203
Abstract: a5201
Text: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.
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TSHA520.
l5-Jul-96
LT 5203
a5201
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Untitled
Abstract: No abstract text available
Text: Tem ic BPV22NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 22N F is a high speed and high sensitive PIN photo diode in a plastic package with a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on G aA s and G aA lA s on GaAIAs IR
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BPV22NF
l5-Jul-96
15-Jul-96
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K423
Abstract: CI 8426
Text: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR
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BPV23NF
15-Jul-96
K423
CI 8426
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Untitled
Abstract: No abstract text available
Text: Tem ic TSUS540. S e m i c o n d u c t o r s GaAs Infrared Emitting Diodes in 0 5 mm T-13A Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally
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TSUS540.
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: Temic BPW34 S e m i c o n d u c t o r s Silicon PIN Photodiode Description T h e B P W 3 4 is a h ig h s p e e d a n d h ig h se n s itiv e P IN p h o to d io d e in a m in ia tu re fla t p la stic p a ck a g e . Its lo p v iew c o n stru c tio n m a k e s it id eal a s a lo w c o st re p la c e m e n t o f
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BPW34
15-Jul-96
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TSTA7100
Abstract: No abstract text available
Text: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant
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TSTA7100
TSTA7100
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant
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TSTA7100
15-Jul-96
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BPW20R
Abstract: No abstract text available
Text: BPW20R Temic S e m i c o n d u c t o r s Silicon PN Photodiode Description B P W 2 0 R is a p la n a r S ilico n P N p h o to d io d e in a h e rm e ti c ally se a le d s h o rt T O - 5 c ase , e sp e c ia lly d e sig n e d fo r h ig h p re c isio n lin e a r a p p lic atio n s.
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BPW20R
15-Jul-96
BPW20R
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