ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
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AN9321
Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75831SK8
MS-012AA
HUFA75831Slopment.
AN9321
HUFA75831SK8
HUFA75831SK8T
MS-012AA
TB370
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PDF
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rs808
Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
Text: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76112SK8
HUF76112SK8
725pF
rs808
HUF76112SK8T
AN7254
AN7260
AN9321
AN9322
MS-012AA
TB334
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g7n60b3d
Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
g7n60b3d
igbt g7n60b3d
G7N60B3
HGT1S7N60B3DS9A
RHRD660
2MH22
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AN9321
Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features
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ISL9N312ASK8T
ISL9N312ASK8
MS-012AA
AN9321
AN9322
ISL9N312ASK8T
MS-012AA
TB334
N312AS
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUF75831SK8
MS-012AA
HUF75831SK8
MS-012AA
75831SK8
HUF75831SK8T.
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏
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HUF76132SK8
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UT28F256
Abstract: UT28F256-FP UT28F256LV RH00VK 39BASE-0101 PPI-1004 UTRH00SC 39BASE Aeroflex UTMC UT28F64/LV Datasheet
Text: Standard Products UT28F64/LV and UT28F256/LV PROMs Programming User Guide Legacy Products July 2001 PROM PROGRAMMING FLOW FOR UT28F64, UT28F256, UT28F64LV and UT28F256LV PROM for Legacy Products The UT28F64 and UT28F256 are 5-volt parts. The UT28F64LV and UT28F256LV are 5-volt parts that have been characterized for
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UT28F64/LV
UT28F256/LV
UT28F64,
UT28F256,
UT28F64LV
UT28F256LV
UT28F64
UT28F256
UT28F256-FP
RH00VK
39BASE-0101
PPI-1004
UTRH00SC
39BASE
Aeroflex UTMC
UT28F64/LV Datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: RURD4120S9A_F085 March 2009 Data Sheet 4A, 1200V Ultrafast Diodes Features The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics trr < 70ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RURD4120S9A
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RHRD660
Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Text: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
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RHRD640,
RHRD650,
RHRD660,
RHRD640S,
RHRD650S,
RHRD660S
175oC
O-251
O-252
RHRD660
rhr660
rhr650
RHRD650
RHRD640S
RHRD660S
RHRD660S9A
RHR640
RHRD640
RHRD650S
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rs808
Abstract: 725P AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
Text: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET [ /Title HUF7 6112S K8 /Subject (7.5A, 30V, 0.026 Ohm, NChannel, Logic Level Power MOSFET) /Autho r () /Keywords (7.5A, 30V, 0.026 Ohm, NChannel,
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HUF76112SK8
6112S
HUF76112SK8
rs808
725P
AN7254
AN9321
AN9322
HUF76112SK8T
MS-012AA
TB334
pspice model gate driver
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ACE-Q101
Abstract: No abstract text available
Text: RURD4120S9A_F085 Data Sheet March 2009 4A, 1200V Ultrafast Diodes Features The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics trr < 70ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RURD4120S9A
TA49036.
ACE-Q101
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UR4120
Abstract: TA49036 RURD4120 RURD4120S RURD4120S9A
Text: RURD4120, RURD4120S Data Sheet Title UR 120, RD 20S bt A, 00V rafa odes utho eyrds A, 00V rafa wer pes, wer File Number 3641.3 4A, 1200V Ultrafast Diodes Features The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics trr < 70ns). They have low
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RURD4120,
RURD4120S
RURD4120
RURD4120S
UR4120
TA49036
RURD4120S9A
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Untitled
Abstract: No abstract text available
Text: LM26420 www.ti.com SNVS579F – FEBRUARY 2009 – REVISED MARCH 2013 LM26420/LM26420Q Dual 2.0A, High Frequency Synchronous Step-Down DC-DC Regulator Check for Samples: LM26420 FEATURES DESCRIPTION • • • • The LM26420 regulator is a monolithic, high
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LM26420
SNVS579F
LM26420/LM26420Q
LM26420X)
55MHz
LM26420Y)
LM26420Q
AEC-Q100
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AN7254
Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370
Text: HUF75531SK8 TM Data Sheet April 2000 File Number 4848 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75531SK8
MS-012AA
75531SK8
AN7254
AN9321
AN9322
HUF75531SK8
HUF75531SK8T
MS-012AA
TB370
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HX8340B
Abstract: HX8340-B mx 362-0
Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8340-B
176RGB
224October,
225October,
HX8340B
mx 362-0
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PDF
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Untitled
Abstract: No abstract text available
Text: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75531SK8
MS-012AA
HUFA75531SK8
MS-012AA
75531SK8
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152oC
Abstract: 900E1 212e7
Text: HUFA75831SK8 TM Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75831SK8
MS-012AA
HUFA75831SK8
MS-012AA
75831SK8
152oC
900E1
212e7
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ITF86172SK8T
Abstract: MS-012AA TB370
Text: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)
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ITF86172SK8T
MS-012AA)
6400S
ITF86172SK8T
MS-012AA
TB370
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g7n60
Abstract: G7N60B3
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
g7n60
G7N60B3
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software LM26420, LM26420-Q0, LM26420-Q1 SNVS579G – FEBRUARY 2009 – REVISED JULY 2014 LM26420/LM26420-Q0/Q1 Dual 2-A, High Frequency Synchronous Buck Regulator 1 Features 3 Description
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LM26420,
LM26420-Q0,
LM26420-Q1
SNVS579G
LM26420/LM26420-Q0/Q1
LM26420
16-pin
20-pin
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AN7254
Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Text: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V
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ITF86130SK8T
MS-012AA)
AN7254
AN7260
ITF86130SK8T
MS-012AA
TB370
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PDF
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mosfet 4953
Abstract: 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9
Text: HUFA75531SK8 Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75531SK8
MS-012AA
75531SK8
mosfet 4953
4953 mosfet
m 4953
mw 4953
AN9321
HUFA75531SK8
HUFA75531SK8T
MS-012AA
TB370
151E9
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PDF
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AN7254
Abstract: AN7260 ITF86130SK8T MS-012AA TB370
Text: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4798.5 Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V
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ITF86130SK8T
MS-012AA)
AN7254
AN7260
ITF86130SK8T
MS-012AA
TB370
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PDF
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