D150N
Abstract: D150*h02l D150NH02L JESD97 STD150NH02L STD150NH02L-1 STD150NH02LT4 D150NH
Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A 3 3 2 1 • RDS(on) * Qg industry’s benchmark
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STD150NH02L-1
STD150NH02L
STD150NH02L
D150N
D150*h02l
D150NH02L
JESD97
STD150NH02L-1
STD150NH02LT4
D150NH
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STD150NH02LT4
Abstract: D150Nh02l D150N
Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A 3 3 2 1 • RDS(on) * Qg industry’s benchmark
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STD150NH02L-1
STD150NH02L
STD150NH02L
STD150NH02L-1
STD150NH02LT4
D150Nh02l
D150N
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D150*h02l
Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark
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STD150NH02L-1
STD150NH02L
STD150NH02L
STD150NH02L-1
D150*h02l
D150N
d150nh02
STD150
STD150NH02L-1 DPAK
0181G
D150Nh02l
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D150*h02l
Abstract: D150Nh02l D150N JESD97 STD150NH02L STD150NH02L-1 STD150NH02LT4 d150nh02
Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A 3 3 2 1 • RDS(on) * Qg industry’s benchmark
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STD150NH02L-1
STD150NH02L
STD150NH02L
D150*h02l
D150Nh02l
D150N
JESD97
STD150NH02L-1
STD150NH02LT4
d150nh02
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SCHEMATIC WITH IGBTS
Abstract: GE200NB60S JESD97 STGE200NB60S
Text: STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat STGE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current
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STGE200NB60S
STGE200NB60S
SCHEMATIC WITH IGBTS
GE200NB60S
JESD97
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STGE200NB60S
Abstract: GE200NB60S JESD97 M1113
Text: STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat STGE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current
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STGE200NB60S
STGE200NB60S
GE200NB60S
JESD97
M1113
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lighter ignitor
Abstract: Zener z FLC01 FLC01-200D C8010
Text: FLC01-200D Application Specific Discretes A.S.D.TM FIRE LIGHTER CIRCUIT FEATURES SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY 150A @ tp = 10µs
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FLC01-200D
FLC01
lighter ignitor
Zener z
FLC01-200D
C8010
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thyristor st 108
Abstract: Thyristor pulse transformer sensor FLC 100 thyristor pin diagram thyristor firing circuit HV transformer basic thyristor firing circuit thyristor st 3 c047 USE OF TRANSISTOR ignition
Text: FLC02-200D Application Specific Discretes A.S.D.TM FIRE LIGHTER CIRCUIT FEATURES SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY 150A @ tp = 10µs
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FLC02-200D
FLC02
thyristor st 108
Thyristor pulse transformer
sensor FLC 100
thyristor pin diagram
thyristor firing circuit
HV transformer
basic thyristor firing circuit
thyristor st 3
c047
USE OF TRANSISTOR ignition
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marking 2U diode
Abstract: gas cooker circuit ignitor FLC01-200D lighter ignitor marking 2U 20 diode Ignition Transformer FLC01 de3f hv transformer
Text: FLC01-200D Application Specific Discretes A.S.D.TM FIRE LIGHTER CIRCUIT FEATURES SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY 150A @ tp = 10µs
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FLC01-200D
FLC01
marking 2U diode
gas cooker circuit ignitor
FLC01-200D
lighter ignitor
marking 2U 20 diode
Ignition Transformer
de3f
hv transformer
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Untitled
Abstract: No abstract text available
Text: V23990-K430-F60-PM target datasheet MiniSKiiP 3 PACK 1200V/150A MiniSKiiP®3 housing Features ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Target Applications Schematic ● Servo Drives ● Industrial Motor Drives ● UPS Types
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V23990-K430-F60-PM
200V/150A
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Untitled
Abstract: No abstract text available
Text: F212R6A150SC target datasheet flowPACK 2 1200V/150A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT4 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F212R6A150SC-M440E
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F212R6A150SC
200V/150A
30-F212R6A150SC-M440E
30-F212R6A150SC01-M440E10
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Untitled
Abstract: No abstract text available
Text: F206R6A150SB target datasheet flowPACK 2 600V/150A Features flow2 housing ● Inverter, blocking diodes ● Built-in thermistor ● IGBT3 technology for low saturation losses Target Applications Schematic ● Power Regeneration Types ● 30-F206R6A150SB-M445E
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F206R6A150SB
00V/150A
30-F206R6A150SB-M445E
30-F206R6A150SB01-M445E10
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Untitled
Abstract: No abstract text available
Text: PBPC1001 - PBPC1007 10A BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Diffused Junction High Current Capability Surge Overload Rating to 150A Peak High Case Dielectric Strength of 1500V Ideal for Printed Circuit Board Application
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PBPC1001
PBPC1007
E95060
MIL-STD-202,
DS21312
PBPC1001-PBPC1007
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2209 TIG074E8 N-Channel IGBT http://onsemi.com 400V, 150A, VCE sat ; 3.8V Single ECH8 Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance Low voltage drive (2.5V)
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ENA2209
TIG074E8
12mm2
A2209-6/6
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Untitled
Abstract: No abstract text available
Text: FZ06 / F0062PA150SA preliminary datasheet flowPHASE0 600V/150A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 3 Target Applications Schematic ● Motor Drive ● UPS
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F0062PA150SA
00V/150A
FZ062PA150SA
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Untitled
Abstract: No abstract text available
Text: FZ06 / F0062PA150SA01 preliminary datasheet flowPHASE0 600V/150A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 3 ● AlN substrate for improved performance Target Applications
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F0062PA150SA01
00V/150A
FZ062PA150SA01
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Untitled
Abstract: No abstract text available
Text: FZ12 / F0122PA150SC preliminary datasheet flowPHASE0 1200V/150A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 4 Target Applications Schematic ● Motor Drive ● UPS
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F0122PA150SC
200V/150A
FZ122PA150SC
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Untitled
Abstract: No abstract text available
Text: UF3001 - UF3007 3.0A ULTRA-FAST RECTIFIER Features Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak Low Reverse Leakage Current Plastic Material: UL Flammability
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OCR Scan
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UF3001
UF3007
DO-201
MIL-STD-202,
10HNI
DS25004
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Untitled
Abstract: No abstract text available
Text: UF3001 - UF3007 3.0A ULTRA-FAST RECTIFIER Features Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak Low Reverse Leakage Current Plastic Material: UL Flammability
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OCR Scan
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PDF
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UF3001
UF3007
IL-STD-202,
DO-201
10QNI
DS25004
UF3001
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SB520S
Abstract: No abstract text available
Text: SB520 - SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak
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OCR Scan
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SB520
SB5100
MIL-STD-202,
SB520-SB5100
SB540
3Ba50
DS23024
SB520S
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Untitled
Abstract: No abstract text available
Text: SB570 -SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features • Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak
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OCR Scan
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PDF
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SB570
-SB5100
DO-201
IL-STD-202,
DS30135
570-S
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Untitled
Abstract: No abstract text available
Text: SB520 -SB5100 5.0A SCHOTTKY BARRIER RECTIFIER Features • Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak
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OCR Scan
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PDF
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SB520
-SB5100
DO-201
IL-STD-202,
DS23024
SB5100
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STPR1505D
Abstract: STPR1520D
Text: STPR1505D - STPR1520D 15A SUPER-FAST GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak Low Reverse Leakage Current
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STPR1505D
STPR1520D
MIL-STD-202,
DS14006
STPR1505D-STPR1520D
STPR1520D
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Untitled
Abstract: No abstract text available
Text: SB520 - SB560 5.0A SCHOTTKY BARRIER RECTIFIER Features • Epitaxial Construction Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak
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OCR Scan
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SB520
SB560
DO-201
MIL-STD-202,
DS23024
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