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    13004 TRANSISTOR Search Results

    13004 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13004 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 13005

    Abstract: 13005 TRANSISTOR 13005 2 transistor 13005 13005 2 13004 TRANSISTOR 13005 A 13005 equivalent PC 13005 TRANSISTOR transistor 13005 CIRCUIT
    Text: MJE13004 NPN MJE13005 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13004 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 4.0 Collector current (Pulse)


    Original     		PDF MJE13004 MJE13005 O-220 transistor 13005 13005 TRANSISTOR 13005 2 transistor 13005 13005 2 13004 TRANSISTOR 13005 A 13005 equivalent PC 13005 TRANSISTOR transistor 13005 CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: 130-04 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF

    13005 2 transistor

    Abstract: transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol VcBO : K S E 13004 : KSE13005 Collector Emitter Voltage


    OCR Scan     		PDF KSE13004/13005 KSE13005 KSE13004 13005 2 transistor transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2

    13005 2 transistor

    Abstract: transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005
    Text: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • H igh S p eed Sw itching • Suitable for Sw itching Regulator and M otor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C o lle cto r Base Voltage : K S E 13004


    OCR Scan     		PDF KSE13004/13005 O-220 KSE13004 13005 2 transistor transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005

    13005 ballast

    Abstract: 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications
    Text: Î- 1 TELEFUNKEN ELECTRONIC 17E D • fi^aODTb DGCHbaS 0 TE 13004 TE 13005 electronic Creative "fe c h n o to g « T-33MI Silicon NPN Power Transistors A p p lications; Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF T-33MI S64542 13005 ballast 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications

    BR 13005

    Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
    Text: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF Q02e14Sb T-33-U ooaci42b T-33-11 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004

    Transistors 13005 D

    Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
    Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use


    OCR Scan     		PDF tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K

    EB 13005

    Abstract: Transistors 13005 D MJE13004
    Text: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.


    OCR Scan     		PDF MJE13004/13005 MJE13004 MJE13005 MJE13004-MJE13005 T-33-73 EB 13005 Transistors 13005 D MJE13004

    13005 2 transistor

    Abstract: 13005a transistor 13005 13005 TRANSISTOR MJE13005A transistor 13005 CIRCUIT transistor E 13005 13004 TRANSISTOR tr 13005 13005 A
    Text: r c G o n ia 7 i D EV ELO PM EN T DATA T his data sheet contains advance information and MJE 13004 MJE 13005 specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE 25E D -T -S 3 -J 3 * SILICON DIFFU SED PO W ER T R A N SIST O R S High-voltage, high-speed glass passivated npn power transistor in a T 0 -2 2 0 envelope intended for use


    OCR Scan     		PDF T-53-I3 T0-220 O-220AB. june1988 S3T31 T-33-73 200/iH 13005 2 transistor 13005a transistor 13005 13005 TRANSISTOR MJE13005A transistor 13005 CIRCUIT transistor E 13005 13004 TRANSISTOR tr 13005 13005 A

    13005 2 transistor

    Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
    Text: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage


    OCR Scan     		PDF TD13004 TD13005 TD13ig T02S1 T0252 13005 2 transistor D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT

    E13005

    Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR
    Text: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications


    OCR Scan     		PDF TE13004 TE13005 VaE13004 E13005 LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: MJE13004, MJE13005 HARRIS S E n i C O N D S E CT OR File N u m b e r 1 8 4 0 SbE T> m 43Q5271 ÜG4Gflflfl f i d *H AS - 3 5 - I S 4-A SwttchM ajiW Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


    OCR Scan     		PDF MJE13004, MJE13005 43Q5271 T0-22QAB MJE13004 MJE13005 0040flc

    BUV93

    Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
    Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated


    OCR Scan     		PDF OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


    OCR Scan     		PDF

    ksd 250v 10a

    Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623


    OCR Scan     		PDF OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072

    2SC102 transistor

    Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558

    Belcanto ST 3010

    Abstract: atakassette Belcanto ST 3001 Stern Radio VEB Kombinat service-mitteilungen robotron stern elite Sonneberg Phonett
    Text: SERVICE-MITTEILUNGEN V E B INDUSTRIE V E RTR IEB RU ND FU NK UND FE RN SE H EN r a d i o -television AUSGABE: S E IT E AUGUST 1 - ö Import* Zu dan BandgeräteImporten des Jahres '1974- gehören auch die ungarischen Stereo-Kassetten-Tonbandgeräte MK-!»2/MK'lt3


    OCR Scan     		PDF III/18/379 Belcanto ST 3010 atakassette Belcanto ST 3001 Stern Radio VEB Kombinat service-mitteilungen robotron stern elite Sonneberg Phonett

    MHT1810

    Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534

    2N5576

    Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
    Text: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


    OCR Scan     		PDF diff15 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N5576 MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    MP2143

    Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235

    RT3062

    Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685