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    11N60CFD Search Results

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    11N60CFD Price and Stock

    Infineon Technologies AG SPP11N60CFDHKSA1

    MOSFET N-CH 600V 11A TO220-3
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    DigiKey SPP11N60CFDHKSA1 Tube 500
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    Infineon Technologies AG SPW11N60CFDFKSA1

    MOSFET N-CH 650V 11A TO247-3
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    DigiKey SPW11N60CFDFKSA1 Tube
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    Rochester Electronics SPW11N60CFDFKSA1 4,585 1
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    Rochester Electronics LLC SPW11N60CFDFKSA1

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey SPW11N60CFDFKSA1 Bulk 160
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    Farnell SPW11N60CFDFKSA1 Each 154
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    Infineon Technologies AG SPP11N60CFDXKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N60CFDXKSA1 Tube 500
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    Mouser Electronics SPP11N60CFDXKSA1
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    EBV Elektronik SPP11N60CFDXKSA1 16 Weeks 500
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    Farnell SPP11N60CFDXKSA1 Each 21 Weeks, 1 Days 1
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    Rochester Electronics SPP11N60CFDXKSA1 553 1
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    Infineon Technologies AG SPI11N60CFDHKSA1

    MOSFET N-CH 650V 11A TO262-3
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    DigiKey SPI11N60CFDHKSA1 Tube
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    Find more 11N60CFD price and stock on Findchips.com

    11N60CFD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60CFD

    Abstract: SPW11N60CFD 11N60C
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C

    11N60CFD

    Abstract: SPI11N60CFD SPP11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD

    11n60cfd

    Abstract: SPW11N60CFD 11N6
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6

    11n60cfd

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618

    11n60cfd

    Abstract: PG-TO-220-3-1 SPP11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11n60cfd PG-TO-220-3-1 SPP11N60CFD

    11N60C

    Abstract: 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11N60C 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1

    11n60cfd

    Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172
    Text: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD

    11N60C

    Abstract: 11N60CFD
    Text: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C 11N60CFD

    Ultra Low rds

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD Ultra Low rds

    11N60C

    Abstract: 11n60cfd SPW11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11N60C 11n60cfd SPW11N60CFD

    11N60CFD

    Abstract: SPW11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 009-134-A 11N60CFD SPW11N60CFD

    11N60C

    Abstract: D8172
    Text: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44  11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C D8172

    11N60CFD

    Abstract: SPP11N60CFD 11N60CF 11N60C
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD P-TO220-3-1 Q67040-S4618 11N60CFD 11N60CFD SPP11N60CFD 11N60CF 11N60C

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPP11N60CFD PG-TO220-3-1 PG-TO220-3-1 Q67040-S4618 11N60CFD

    11N60C

    Abstract: 11N60CFD 11N60 11N60CF SPI11N60CFD 11N6 SPP11N60CFD D11A SPP11N60
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPI11N60CFD PG-TO262 PG-TO220 11N60CFD 11N60C 11N60CFD 11N60 11N60CF SPI11N60CFD 11N6 SPP11N60CFD D11A SPP11N60

    11n60cfd

    Abstract: transistor D55
    Text: 11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 " 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd transistor D55