2SC5540
Abstract: TA-1682
Text: Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).
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ENN6280
2SC5540
10GHz
S21e2
2SC5540]
2SC5540
TA-1682
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2SC5540
Abstract: TA-1682
Text: Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : ⏐S21e⏐2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).
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ENN6280
2SC5540
10GHz
S21e2
2SC5540]
2SC5540
TA-1682
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TA-2425
Abstract: 2SC5537 ENN6340 26GHz
Text: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
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ENN6340
2SC5537
S21e2
2SC5537]
TA-2425
2SC5537
ENN6340
26GHz
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2SC5578
Abstract: No abstract text available
Text: Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).
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ENN6297
2SC5578
2048B
2SC5578]
2SC5578
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2SC5537
Abstract: ic 723 cn
Text: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).
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ENN6340
2SC5537
S21e2
2SC5537]
2SC5537
ic 723 cn
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2SA60
Abstract: 2SA608N 2SC536N IT00504 IT00498 2SC536
Text: Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N]
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ENN6324
2SA608N/2SC536N
2SA608N/2SC536N]
2SA608N
2SA60
2SA608N
2SC536N
IT00504
IT00498
2SC536
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A12199
Abstract: a1294 A1296 A12941 A12200 Tuners A1295 LC72122V SSOP20 a12947
Text: 注文コードNo.N 6 1 1 3 A No. N 6 1 1 3 A 10700 開発速報 No.※6113 とさしかえてください。 LC72122V 新 CMOS LSI ポータブル機器向け 電子同調用PLL周波数シンセサイザ 低電圧 1.8V~3.6V 動作のPLL周波数シンセサイザLSIでありTV (VHF)/FM/AMポータブルチューナを容易
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LC72122V
10250MHz
240MHz
510MHz
412MHz
75kHz)
SSOP20
10700TS
B8-4970/11499TS
A12199
a1294
A1296
A12941
A12200
Tuners
A1295
LC72122V
SSOP20
a12947
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2SC5577
Abstract: No abstract text available
Text: Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN6281
2SC5577
100ns
2048B
2SC5577]
2SC5577
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2sc5578
Abstract: No abstract text available
Text: Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).
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ENN6297
2SC5578
2048B
2SC5578]
2sc5578
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2SC5502
Abstract: No abstract text available
Text: Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.1dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
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ENN6279
2SC5502
S21e2
2SC5502]
2SC5502
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2SC5577
Abstract: 10A800
Text: Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN6281
2SC5577
100ns
2048B
2SC5577]
2SC5577
10A800
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IC 4558 test circuit
Abstract: 2SC5541 of ic 7660
Text: Ordering number:ENN6337 NPN Epitaxial Planar Silicon Transistor 2SC5541 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=2GHz . · High gain : ⏐S21e⏐2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ.
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ENN6337
2SC5541
S21e2
13GHz
2SC5541]
IC 4558 test circuit
2SC5541
of ic 7660
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2SC5539
Abstract: TA-2427
Text: Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions • Low noise : NF=1.1dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7.5GHz typ.
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ENN6341
2SC5539
S21e2
2SC5539]
2SC5539
TA-2427
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2SC5388
Abstract: 2SC5388 equivalent 2sc-5388 2sc5388 TRANSISTOR transistor 2SC5388 TA-1738 d 6283 ic ENN6283 6283 ic 62832
Text: Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features Package Dimensions • High speed Adoption of MBIT process . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN6283
2SC5388
2039D
2SC5388]
2SC5388
2SC5388 equivalent
2sc-5388
2sc5388 TRANSISTOR
transistor 2SC5388
TA-1738
d 6283 ic
ENN6283
6283 ic
62832
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2SC5539
Abstract: No abstract text available
Text: Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.1dB typ f=1GHz . · High gain : ⏐S21e⏐2=12dB typ (f=1GHz). · High cutoff frequency : fT=7.5GHz typ.
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ENN6341
2SC5539
S21e2
2SC5539]
2SC5539
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2SC5502
Abstract: 62792
Text: Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.1dB typ f=1GHz . · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
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ENN6279
2SC5502
S21e2
2SC5502]
2SC5502
62792
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