Untitled
Abstract: No abstract text available
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
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diode 104
Abstract: No abstract text available
Text: Package Drawing 104-ball FBGA Unit: mm 14.56 ± 0.1 0.2 S B 15.18 ± 0.1 INDEX MARK 0.2 S A 0.10 S 1.05 ± 0.1 S 0.40 ± 0.05 0.10 S B φ0.12 M S A B 1.27 104-φ0.50 ± 0.05 INDEX MARK 12.7 A 2.0 12.0 0.8 ECA-TS2-0206-01
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104-ball
ECA-TS2-0206-01
diode 104
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playstation 3
Abstract: playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA
Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor
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512Mb
E0428E60
playstation 3
playstation
SONY PLAYSTATION 3
playstation controller
XDR Rambus
DDR2-667
DDR2-800
DDR333
DDR400
104BA
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MX29GL256
Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes
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AT49SV163D
48-Pin
48-Ball
S29AS016J
EN29SL800
S29AS00gest
MX29GL256
28F512P30 Numonyx
M29W256G
28F00AP30
w25q128
MX25L6445
28F00AM29EW
M29DW127G
28F128P30
PF38F3040M0Y3D
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Rambus XDR
Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.
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512Mb
x16-bit
GDDR3-1600
DDR3-1333
64MB/system
DDR2-667
DDR2-1066
Rambus XDR
DDR3-1333
XDR Rambus
DDR2 x32
ELPIDA DDR3
XDR DRAM
DDR2-667
DDR2-800
DDR333
DDR400
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014701 b
Abstract: 8x4Mx16
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E31
014701 b
8x4Mx16
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8x4Mx16
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E20
8x4Mx16
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PF38F4060M0Y3DF
Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
Text: product line card Numonyx NOR flash memory Numonyx NOR flash memory for wireless applications A wide selection of NOR plus RAM multi-chip package offerings, and NOR only packages N u m on y x M S t r a t a f l a s h ® C e l l u l a r M e m or y NOR Density
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1024Mb
PF58F0062M0Y1BF
105ball
PF58F0033M0Y0BF
x1x16
80Ball
M36A0W5040B/
M36A0W5030B/
PF38F4060M0Y3DF
PF38F3040
PF38F5060M0Y0CF
m36w0r6050u
PF48F6000M0Y1BH
M36W0R5040
PF38F5070M0Y1EE
M36W0T5040
Pf38f3050m0y0Ce
PF38F3050M0Y3DF
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010 s
Abstract: No abstract text available
Text: EDX5116ACSE Package Drawing 104-ball FBGA Unit: mm 14.56 ± 0.1 0.2 S B 15.18 ± 0.1 INDEX MARK 0.2 S A 0.10 S 1.05 ± 0.1 S 0.40 ± 0.05 0.10 S B φ0.12 M S A B 1.27 104-φ0.50 ± 0.05 INDEX MARK 12.7 A 2.0 12.0 0.8 ECA-TS2-0177-01 Preliminary Data Sheet E0881E10 Ver. 1.0
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EDX5116ACSE
104-ball
ECA-TS2-0177-01
E0881E10
010 s
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Numonyx admux
Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
Text: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit
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10x10
512Mbit-1Gbit
128-256Mbit
104-Ball
512Mb
133Mhz
133Mhz
Numonyx admux
JZ58F0101M0Y0GE
SCSP M18
JZ58F0085M0Y0GF
numonyx nand flash
Intel nor flash
1024-Mbit
PSRAM
Numonyx StrataFlash M18
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Rambus XDR
Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E40
Rambus XDR
XDR Rambus
EDX5116ADSE-3C-E
8x4Mx16
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XDR Rambus
Abstract: EDX5116ACSE xdr elpida
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
E0881E20
XDR Rambus
xdr elpida
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XDR DRAM
Abstract: ODF10 K4Y54044UF
Text: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81
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K4Y5416
256Mbit
XDR DRAM
ODF10
K4Y54044UF
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EDX5116ADSE-3C-E
Abstract: EDX5116ADSE
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E30
EDX5116ADSE-3C-E
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K4Y50024UC
Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
K4Y50024UC
K4Y50044UC
K4Y50084UC
K4Y50164UC
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104BA
Abstract: No abstract text available
Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary
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K4Y5002
512Mbit
dev37
104BA
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EDX5116ACSE
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
M01E0107
E0881E10
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E40
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Untitled
Abstract: No abstract text available
Text: Preliminary K4Y5016 /08/04/02 4UC XDRTM DRAM 512Mbit XDRTM DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y5016
512Mbit
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XDR Rambus
Abstract: 8H001
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
E0643E40
XDR Rambus
8H001
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E30
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EDX5116ACSE-3C-E
Abstract: EDX5116ACSE X5116
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
M01E0107
E0881E20
EDX5116ACSE-3C-E
X5116
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DQ15d
Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E40
DQ15d
EDX5116ADSE-3C-E
x5116
E1033E40
T21at
8x4Mx16
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