1MX4
Abstract: HYB314400BJ/BJL-50/-60/-70
Text: 1Mx4-Bit Dynamic RAM HYB314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB314400BJ/BJL-50/-60/-70
P-SOJ-26/20
GPJ05626
1MX4
HYB314400BJ/BJL-50/-60/-70
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Untitled
Abstract: No abstract text available
Text: UPD424400LA-80L 1/2 IL08 * C-MOS 4M (1,048,576WORDx4)-BIT DYNAMIC RAM - TOP VIEW - I/O1 1 GND 26 I/O2 2 25 I/O4 WE IN 3 24 I/O3 RAS IN 4 23 CAS A9 IN 5 IN 22 OE IN A0 IN 9 18 A8 IN A1 IN 10 17 A7 IN A2 IN 11 16 A6 IN A3 IN 12 15 A5 IN 14 A4 IN 13 V DD (+5V)
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UPD424400LA-80L
576WORDx4
1024x4
1024x1024x4
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A302 w3
Abstract: aa z8b
Text: TOSHIBA MOS MEMORY PRODUCTS TC514410J/Z-80» TC514410J/Z-10 DESCRIPTION’ The TC514410J/Z i s th e new g e n e r a t i o n dynamic RAM o r g a n i z e d 1 , 0 4 8 , 5 7 6 w ords by 4 b its. The TC514410J/Z u t i l i z e s TOSHIBA'S CMOS S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s
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TC514410J/Z-80»
TC514410J/Z-10
TC514410J/Z
514410J/Z
TC514410J/Z-80,
TC514410J/M
A302 w3
aa z8b
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TC51440ASJ
Abstract: No abstract text available
Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC514410ASJ-60/70/80
TC514410ASJ
300mil)
TC5144100/
512KX4
TC51440ASJ
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4007J S 1 MEG X 4 DRAM I^IICRON 1 MEG x 4 DRAM DRAM FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Single +3.3V ±0.3V power supply Low power, 0.25mW standby; 115mW active, typical JEDEC-standard pinout and packages
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MT4LC4007J
115mW
024-cycle
128ms
150nA
25-35ns
GD12D4Q
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced
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TC51V4400ASJL/AFTL80
TC51V
4400ASJL/AFTL
TC51V4400ASJL/AFTL
TC51V4400/
512KX4
QQE542fl
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siemens FLH
Abstract: 514400 514400J-10 514400J-80 514400J
Text: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80
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023SbOS
siemens FLH
514400
514400J-10
514400J-80
514400J
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WV-103
Abstract: Z80 application note dynamic ram
Text: * This is advanced information a n d s p e cifications are subject to change w i t h o u t notice. 1,048,576 W O R D x 4 BIT DYNAMIC RAM DESCRIPTION T h e T C 5 1 4 4 1 0 J / Z is the n e w g e n e r a t i o n dynamic R A M o r g anized 1 , 0 4 8 , 5 7 6 w o r d s by 4
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TC51441OJ/Z-60
TC51441OJ/Z-10
WV-103
Z80 application note dynamic ram
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TC514400
Abstract: TCWP
Text: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4
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TC514400J/Z
TC514400J/Z-80
TC514400J/Z--10
TC514400
TCWP
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Untitled
Abstract: No abstract text available
Text: MT4C4001 J S 1 MEG X 4 DRAM (MICRON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process
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MT4C4001
024-cycle
MT4C4001J)
128ms
MT4C4001J
20/26-Pin
001217T
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 314405BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Hyper Page Mode - EDO • Performance: ^RAC RAS access time
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314405BJ/BJL-50/-60/-70
P-SOJ-26/20-5
85max
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SMD MARKING CODE RAC
Abstract: No abstract text available
Text: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 514405BJ/BJL-50/-60/-70 Preliminary Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO • Performance: -50 -60 -70 fRAC RAS access time
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514405BJ/BJL-50/-60/-70
P-SOJ-26/20-5
181B1
SMD MARKING CODE RAC
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TC51440ASJ-70
Abstract: TC51440ASJ TC51440ASJ-60
Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASI utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC514410ASJ-60/70/80
TC514410ASJ
TC514410ASI
300mil)
TC51440ASJ-70
TC51440ASJ
TC51440ASJ-60
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TC5144
Abstract: No abstract text available
Text: 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514402J/Z
TC514402J/Z.
512Kx
TC514402J/Z-80
TC514402J/Z--10
TC5144
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514400A
Abstract: ATR80 514400AZ ATR60
Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514400AP/AJ/ASJ-60,-70,-80 TC514400AZ/AFT/ATR-60,-70,-80 TENTATIVE DATA 1,048,576 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The T C 514400A P /A J/A SJ/A Z /A FT /A T R is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6
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TC514400AP/AJ/ASJ-60
TC514400AZ/AFT/ATR-60
14400A
300/350m
TC514400AP/AJ/ASJ-60,
TC514400AZ/AFT/ATR-60,
514400A
ATR80
514400AZ
ATR60
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TC514400APL
Abstract: A2L-70 D3P20-P-300C
Text: PRELIMINARY 1,0 4 8 ,5 7 6 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as
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TC514400APL/AJL/ASJL/AZL
300/350rnil)
TC514400APL/AJL/ASJIVAZL.
a512KX4
TC514400APL/AJL/ASJL/AZLâ
TC514400APL/A
JL/ASJL/AZL-80
TC514400APL
A2L-70
D3P20-P-300C
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Z80 INTERFACING TECHNIQUES
Abstract: TC514 TC514402J CAWR
Text: - ^ ~ 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well
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TC514402J/Z
TC514402J/Z.
512Kx
TC514402J/Z--80
TC514402J/Zâ
Z80 INTERFACING TECHNIQUES
TC514
TC514402J
CAWR
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ROD 486 1024
Abstract: ra5e A476 iprite TC514410J a473 A470
Text: * T h is i s advanced in f o r m a tio n and s p e c i f i c a t i o n s a r e s u b j e c t to change w ith o u t n o t i c e . 1,048,576 W O R D x 4 BIT DYNAMIC RAM DESCRIPTION The TC514410J/Z i s t h e new g e n e r a t i o n dynamic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords by 4
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TC514410J/Z
TC51441
ROD 486 1024
ra5e
A476
iprite
TC514410J
a473
A470
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Untitled
Abstract: No abstract text available
Text: MT4LC4001 J S 1 MEG X 4 DRAM MICRON • TECHNO! OGY. INC 1 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE OPTIONAL SELF REFRESH PIN A SSIG N M EN T (Top View) • Single +3.3V +0.3V power supply • Low power, 0.3mW standby; lOOmW active, typical • Industry-standard x4 pinout, timing, functions and
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MT4LC4001
024-cycle
128ms
150jj
20/26-Pin
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 314405BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO • Performance: -50 -60 -70 ^RAC RAS access time
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OCR Scan
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314405BJ/BJL-50/-60/-70
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The TC514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4
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TC514400J/Z
TC514400J/Zâ
l7240
T-46-23-18
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Untitled
Abstract: No abstract text available
Text: , „„„ 1,048,576 WORD x 4 BIT DYNAMIC RATI * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514402J/Z
TC514402J/Z.
512Kx
TC514402J/Zâ
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514400J
Abstract: No abstract text available
Text: 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION * This is advanced information and specifications are subject to change without notice. The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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OCR Scan
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PDF
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TC514400J/Z
TC514400J/Z.
TC514400J/Zâ
514400J
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC514400J/Z-80, TC514400J / Z - 10 DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400J/Z utilizes T0SHI3A's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and
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TC514400J/Z-80,
TC514400J
TC514400J/Z
V--102
TC514400J/Z-l
TC514400J/Z10
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