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    14400A Search Results

    14400A Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    51722-10214400ABLF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 2P 144S Right Angle Header. Visit Amphenol Communications Solutions
    51966-10014400ABLF Amphenol Communications Solutions PwrBlade®, Power Connectors, 144S Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51967-10014400AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 144S Vertical Receptacle. Visit Amphenol Communications Solutions
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    14400A Price and Stock

    Sensata Circuit Breakers R11-4-4.00A-R01CV-V

    CIR BRKR MAGHYDR 4A 250VAC 65VDC
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    DigiKey R11-4-4.00A-R01CV-V Tray 71 1
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    RS R11-4-4.00A-R01CV-V Bulk 12 Weeks 3
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    Master Electronics R11-4-4.00A-R01CV-V
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    Sager R11-4-4.00A-R01CV-V 1
    • 1 $25.03
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    • 100 $20.38
    • 1000 $16.14
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    Sensata Circuit Breakers PP11-4-4.00A-OC-V

    CIR BRKR MAG-HYDR
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    DigiKey PP11-4-4.00A-OC-V Bulk 2 1
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    RS PP11-4-4.00A-OC-V Bulk 12 Weeks 3
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    Master Electronics PP11-4-4.00A-OC-V 36
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    Sager PP11-4-4.00A-OC-V 1
    • 1 $25.03
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    • 100 $20.38
    • 1000 $16.14
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    Sensata Circuit Breakers R11-4-4.00A-B06CV-V

    CIR BRKR MAG-HYDR 4A ROCKER
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    DigiKey R11-4-4.00A-B06CV-V Bulk 1 1
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    RS R11-4-4.00A-B06CV-V Bulk 12 Weeks 3
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    Master Electronics R11-4-4.00A-B06CV-V 8
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    Skyworks Solutions Inc 515ACAM614400AAG

    XTAL OSC VCXO 6.1440MHZ LVPECL
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    DigiKey 515ACAM614400AAG 50
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    Mouser Electronics 515ACAM614400AAG
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    Skyworks Solutions Inc 515ACAM614400AAGR

    XTAL OSC VCXO 6.1440MHZ LVPECL
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    DigiKey 515ACAM614400AAGR Reel 1,000
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    Mouser Electronics 515ACAM614400AAGR
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    14400A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DCR1080G22

    Abstract: DCR1080G18 DCR1080G20
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.3 August 2007 LN25531 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs * Higher dV/dt selections available


    Original     		PDF DCR1080G22 DS5227-1 LN25531) 4400A DCR1080G20 DCR1080G18 DCR1080G22 DCR1080G18 DCR1080G20

    dcr1080

    Abstract: No abstract text available
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.0 FEBRUARY 2005 LN23798 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs High Power Drives


    Original     		PDF DCR1080G22 DS5227-1 LN23798) 4400A DCR1080G22 DCR1080G20 DCR1080G18 dcr1080

    Untitled

    Abstract: No abstract text available
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.1 May 2005 LN23941 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs High Power Drives


    Original     		PDF DCR1080G22 DS5227-1 LN23941) 4400A DCR1080G22 DCR1080G20 DCR1080G18

    Magnetic Field Sensor

    Abstract: max 232 DM-232
    Text: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is


    Original     		PDF DM-232 DM-232 M-118 4400A/m Magnetic Field Sensor max 232

    DCR1080G22

    Abstract: dcr1080
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.2 JULY 2006 LN24663 FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies


    Original     		PDF DCR1080G22 DS5227-1 LN24663) 4400A DCR1080G22 DCR1080G20 DCR1080G18 dcr1080

    ic 4800

    Abstract: FZ2400R17KF6B2 FZ2400R17KF6-B2 fz 79 1500 4500 igbt
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF FZ2400R17KF6B2 ic 4800 FZ2400R17KF6B2 FZ2400R17KF6-B2 fz 79 1500 4500 igbt

    ic 4800

    Abstract: IGBT module FZ 1200
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung


    Original     		PDF FZ246B2 ic 4800 IGBT module FZ 1200

    95A sensor hall

    Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
    Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 14400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the 14400A/AL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF 4400A/AL 576-Word MSM514400A/AL cycles/16ms, cycles/128ms MSM514400A/AL b724240

    814400a

    Abstract: MB814400A
    Text: March 1992 Edition 1.0 DATA SHEET FUJITSU : M B 8 14400A-60/-70/-80 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu M B 14400A is a fully decoded C M O S Dynamic RA M D R A M that contains 4,194,304 memory cells accessible in 4 -b it increments. T h e M B 14400A features a f a s t pag e’ mode of


    OCR Scan     		PDF 4400A-60/-70/-80 14400A 024-b 14400Ain F26001S MB814400A-60 MB814400A-70 MB814400A-80 814400a MB814400A

    AZL-70

    Abstract: No abstract text available
    Text: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The 14400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the


    OCR Scan     		PDF TC514400APL/AJL/ASJL/AZL 300/350mil) tolTC514400APL/AJL/ASJIVAZL. a512K TC514400APL/AJ L/AZL-70, L/AZL-80 AZL-70

    514400A

    Abstract: M514400A 514400AZ
    Text: 14400A S e rie s -14400AL Series Low Power Version 14400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory 14400AJ/A LJ/A LSJ Series • DESCRIPTION The Hitachi 14400A is a C M O S dynamic RAM organized 1,048,576 word x


    OCR Scan     		PDF HM514400A ----------------HM514400AL HM514400ASL 576-Word 20-pin 514400A M514400A 514400AZ

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514100ASJL/AFIL60/70/80 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC514100A SJL/A FTL is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514100A SJL/A FTL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC514100ASJL/AFIL60/70/80 TC514100A

    tc511000aj

    Abstract: No abstract text available
    Text: TOSHIBA THM362020AS/ASG -60/70/S0 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 14400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as


    OCR Scan     		PDF THM362020AS/ASG -60/70/S0 THM362020A TC514400ASJ TC511000BJ/AJ THM362020AS/ASG THM362020AS/ASQ-60 THM362020AS/ASG-70 4400A tc511000aj

    mt4c4001

    Abstract: MT4C4001-6 TC51440 20PIN MT4C4001-10 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10
    Text: 235 - 4M CMOS X íiSícffl m % ît £ °C TRAC max (ns) TRCY (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 4) Í TCAD min (ns) 2 0 P I N ¡if. TAH min (ns! TP min (ns) TWCY min (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) I DD max (raA) À I DD STANDBY


    OCR Scan     		PDF 20PIN MN424400ASJ/AL/ATT/ATTR-07 IK/128 MN424400ASJ/AL/ATT/ATTR-08 MT4C4001-10 IK/16 TC514402AP/AJ/ASJ-70 TC514402AP/AJ/ASJ-80 mt4c4001 MT4C4001-6 TC51440 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10

    ZIP20-P-400A

    Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
    Text: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE 14400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The 14400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC514400ASJ/AZ/AFT-60/70/80 TC514400ASJ/AZ/AFT TC514400/ASJ/ 512KX4 cJOc5724Ã ZIP20-P-400A toshiba a75 TSOP26-P-300 TC514400ASJ

    EJ350

    Abstract: No abstract text available
    Text: O K I semiconductor 14400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 14400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process


    OCR Scan     		PDF MSM514400A/AL_ 576-Word 14400A/A 576-w 26-pin 20pin uMSM514400A/AL MSM514400A/AL" EJ350

    Untitled

    Abstract: No abstract text available
    Text: 1 ,0 4 8 ,5 7 6 W O R D PRELIMINARY y . 4 BIT D Y N A M I C R A M D ESC R IP TIO N The 14400AP/AJ/ASJ/AZ is the ne’.v generation dynamic HAM organized 1,048,576 words by 4 bits. The 14400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well


    OCR Scan     		PDF TC514400AP/AJ/ASJ/AZ TC514400A 3QQ/350mil) TC514400AP/AJ/ASJ/AZ. a512K TC514400AP/AJ/ASJ/AZâ TC514400AP/AJ/ASJ/AZ-80

    512kx4

    Abstract: SOJ26-P-350 1024X1024X4
    Text: 4400AP/AJ/ASJ/AZ-80 j g g g g P/AJ/ASJ/AZ-10 m Ë È Mm ê s M S ii* ® S m PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The 14400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well


    OCR Scan     		PDF 4400AP/AJ/ASJ/AZ-80 P/AJ/ASJ/AZ-10 TC514400AP/AJ/ASJ/AZ 300/350mil) 512KX4 TC514400AP/AJ/ASJ/AZ-- TC514400AP/AJ/ASJ/AZ-80 TC514400AP/AJ/ASJ/AZ-10 SOJ26-P-350 1024X1024X4

    Untitled

    Abstract: No abstract text available
    Text: 14400A S e rie s -14400AL Series Low Power Version 14400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random A c ce s s Memory HM 14400AJ/AU/ALSJ Series • DESCRIPTION The Hitachi 14400A is a C M O S dynamic RAM organized 1,048,576 word x


    OCR Scan     		PDF HM514400A --------------------------HM514400AL HM514400ASL 576-Word 514400AJ/AU/ALSJ 20-pin

    56G1

    Abstract: HB56G18B-8A HM514400
    Text: HB56G18 Series 1,048,576-Word x B-Bit High Density Dynamic RAM Module • DESCRIPTION The H856G18 is a 1M x 8 dynamic RAM module, mount­ ed two 4 Mbit DRAM 14400AS sealed in SOJ pack­ age. An outline of the HB56G18 is 30-pin single in-line pack­ age (socket type).


    OCR Scan     		PDF HB56G18 HB56G18B-7A HB56G18B-8A HB56G18B-10A 30-pin HB56G18GB-7A HB56G18GB-8A HB56G18GB- 576-Word 56G1 HM514400

    HY514400-80

    Abstract: hitachi 1k x 4 HM514402 HM514402A-7 20PIN HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001
    Text: - 233 4M CMOS w % tt £ CC TRAC max ns) A D y n a m i c &• > y n R A M (1 0 4 8 5 7 6 x 4 ) tt 2 0 P I N m 7, TRCY min (ns) TCAD min (ns) TAI-i min (ns) TP mi n (ns) TCCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) Â I DD STANDBY


    OCR Scan     		PDF 20PIN HM514400AJ/S/Z/17R-Ã HM514400AJ/S/Z/T/R-7 HM514400AJ/S/Z/T/H-8 IK/16 KM44C1000A-10 KM44C1000AL-7 IK/128 KM44C1000AL-8 HY514400-80 hitachi 1k x 4 HM514402 HM514402A-7 HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: . - - IU 11 14400APL/AJL/ASJL/AZL-70, 14400APL/AJL/ASJL/AZL-80 14400APL/AJL/ASJL/AZL-10 PRELIMINARY 1,048,576 WORD x 4 BIT DYNAM IC RAM DESCRIPTION The 14400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as


    OCR Scan     		PDF TC514400APL/AJL/ASJL/AZL-70, TC514400APL/AJL/ASJL/AZL-80 TC514400APL/AJL/ASJL/AZL-10 TC514400APL/AJL/ASJL/AZL 300/350mil) TC514400APL/AJL/ASJL/AZL. a512K