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    1024K 16 Search Results

    1024K 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C010-200DM/B Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-55DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    27C010-120DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    70T3509MS133BPI Renesas Electronics Corporation 1024K x 36 Sync, 3.3V/2.5V Dual-Port RAM Visit Renesas Electronics Corporation
    70T3509MS133BP Renesas Electronics Corporation 1024K x 36 Sync, 3.3V/2.5V Dual-Port RAM Visit Renesas Electronics Corporation
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    1024K 16 Price and Stock

    Samtec Inc PMSD-10-24-K-16.00-D-LUS

    Cable Assembly Discrete Wire 0.406m 24AWG 20 POS Discrete Wire Housing to 20 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: PMSD-10-24-K-16.00)
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    Master Electronics PMSD-10-24-K-16.00-D-LUS
    • 1 $27.26
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    Samtec Inc PMSS-10-24-K-16.00-D-LUS

    Cable Assembly Discrete Wire 0.406m 24AWG 10 POS Discrete Wire Housing to 10 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: PMSS-10-24-K-16.00)
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    Samtec Inc PMSS-10-24-K-16.00-D-LDS

    Cable Assembly Discrete Wire 0.406m 24AWG 10 POS Discrete Wire Housing to 10 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: PMSS-10-24-K-16.00)
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    Dynapar HS35R1024K16J

    Encoder, Heavy Duty, Hollow Shaft, 1-1/4in Bore, 1024 PPR, 8 pin M12 Termination | Dynapar HS35R1024K16J
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    RS HS35R1024K16J Bulk 2 Weeks 1
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    PennEngineering (PEM) AES1024K166CSI

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    DB Roberts AES1024K166CSI
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    Find more 1024K 16 price and stock on Findchips.com

    1024K 16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EDI9G361024C

    Abstract: No abstract text available
    Text: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy


    Original     		EDI9G361024C 1024K EDI9G361024C 9G361024C EDI9G361024C15MNC PDF

    A29800UV-70F

    Abstract: a29800uv-70if A29800TV-70I A29800TV-70F a29800um-70f A29800TV-70IF A29800UV70F A29800 A29800UV-55 A29800UV-70I
    Text: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001


    Original     		A29800 1024K XX11h XX03h A29800UV-70F a29800uv-70if A29800TV-70I A29800TV-70F a29800um-70f A29800TV-70IF A29800UV70F A29800UV-55 A29800UV-70I PDF

    Q11L

    Abstract: 70P3337 CQX 89 IDT70P3307 IDT70P3337 RM-576 Q15L tbl17 BW1R q11r
    Text: PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ 18Mb Density 1024K x 18 – Also available 9Mb Density (512K x 18) QDR-II x 18 Burst-of-2 Interface – Commercial: 233MHz, 250MHz


    Original     		IDT70P3307 IDT70P3337 1024K/512K 1024K 233MHz, 250MHz 18/9Mb IDT70P3307/70P3337 Q11L 70P3337 CQX 89 IDT70P3307 IDT70P3337 RM-576 Q15L tbl17 BW1R q11r PDF

    Q13L

    Abstract: 70P3337 CQX 89 IDT70P3307 IDT70P3337 diode d5r 70P3307
    Text: PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM Features ◆ 18Mb Density 1024K x 18 – Also available 9Mb Density (512K x 18) QDR-II x 18 Burst-of-2 Interface – Commercial: 233MHz, 250MHz Separate, Independent Read and Write Data Ports


    Original     		IDT70P3307 IDT70P3337 1024K/512K 1024K 233MHz, 250MHz de024 70P3337 drw17 Q13L CQX 89 IDT70P3307 IDT70P3337 diode d5r 70P3307 PDF

    CY62157EV30

    Abstract: CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		CY62158EV30 1024K CY62157EV30 CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI PDF

    Untitled

    Abstract: No abstract text available
    Text: LE25S81A Advance Information http://onsemi.com 8M-bit 1024K8 Serial Flash Memory 1. Overview The LE25S81A is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration. It uses a single power supply. While making the most of the features inherent to a serial flash memory device, the LE25S81A is


    Original     		LE25S81A 1024Kï LE25S81A 1024K PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2261 LE25S80QH Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25S80QH is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the


    Original     		A2261 LE25S80QH 1024K LE25S80QH A2261-23/23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2262A LE25S81FD Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25S81FD is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the


    Original     		A2262A LE25S81FD 1024K LE25S81FD A2262-23/23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2263 LE25U81AFD Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25U81AFD is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 2.5V power supply. While making the most of the


    Original     		A2263 LE25U81AFD 1024K LE25U81AFD A2263-23/23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2199 LE25U81AQE CMOS LSI 8M-bit 1024K x 8 Serial Flash Memory http://onsemi.com Overview The LE25U81AQE is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 2.5V power supply. While making the most of the


    Original     		ENA2199 LE25U81AQE 1024K LE25U81AQE 1024K A2199-22/22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2269 LE25S81QE Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25S81QE is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the


    Original     		A2269 LE25S81QE 1024K LE25S81QE A2269-23/23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2286 LE25U81AMC Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K x 8 Serial Flash Memory Overview The LE25U81AMC is a SPI bus flash memory device with a 8M bit (1024K x 8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 2.5V power supply. While making the most of the


    Original     		A2286 LE25U81AMC 1024K LE25U81AMC 1024K A2286-23/23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2260 LE25S80FD Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25S80FD is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the


    Original     		A2260 LE25S80FD 1024K LE25S80FD A2260-23/23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2262 LE25S81FD Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25S81FD is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the


    Original     		A2262 LE25S81FD 1024K LE25S81FD A2262-23/23 PDF

    AS6C1616

    Abstract: TSOPI
    Text: APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM PACKAGE OUTLINE DIMENSION 48-pin 12mm x 20mm TSOP-I Package Outline Dimension APRIL/2010 V1.b ALLIANCE MEMORY


    Original     		AS6C1616 1024K 48-pin APRIL/2010 AS6C1616 TSOPI PDF

    SST32HF32A2

    Abstract: No abstract text available
    Text: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF32A2 SST32HF32A32Mb Flash + 16Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – 2M x16 Flash + 1024K x16 PSRAM • Single 2.7-3.3V Read and Write Operations


    Original     		SST32HF32A2 SST32HF32A32Mb 1024K SST32HF64A2/B2 S71299 S71261-01-000 SST32HF32A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPF16512A 16-channel MIDI Synthesizer with 1024K-byte ROM Preliminary SEP. 03, 2003 Version 0.1 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.


    Original     		SPF16512A 16-channel 1024K-byte PDF

    23383-C

    Abstract: No abstract text available
    Text: N16L163WC2C NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com Advance Information 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 16 bit Overview Features The N16L163WC2C is an integrated memory


    Original     		N16L163WC2C 1024K N16L163WC2C 23383-C 23383-C PDF

    Untitled

    Abstract: No abstract text available
    Text: I 1 MEGABIT CM O S STATIC RAM MODULE IDT7M624S Integrated D evice Technology. Inc FEATURES: DESCRIPTION: • High-density 1024K-bit CMOS static RAM module The IDT7M624 is a 1024K-bit high-speed CMOS static RAM constructed on a multi-layered ceramic substrate using 16


    OCR Scan     		IDT7M624S 1024K-bit IDT7M624 IDT7187 lntoa64K IDT7187s 624S1 IDT7M624 MIL-STD-883, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 M EG ABIT CM O S STATIC RAM PLASTIC M O DULE ADVANCE IDT7MB624 Integrated Devicelechnology. Inc FEATURES: DESCRIPTION: • High-denslty 1024K-bit CMOS static RAM module The IDT7MB624 is a 1024K-bit high-speed CMOS static RAM constructed on an epoxy laminate substrate using 16 IDT7187


    OCR Scan     		IDT7MB624 1024K-bit IDT7187 40-pln, 40-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K x 8 SRAM Module 2048Kx 8 SRAM Module Features F unctional D escription • High-density 8-/16-megabit SRAM modules T he CYM1471 an d CYM 1481 are highperform ance 8-m egabit and 16-megabit static R A M m odules organized as 1024K


    OCR Scan     		CYM1471 CYM1481 1024K 2048Kx 8-/16-megabit CYM1471 16-megabit 1024K 2048K 1471L PDF

    8M624

    Abstract: No abstract text available
    Text: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or


    OCR Scan     		16-BIT) IDT8M624S IDT8M612S 1024K/512K-bit IDT8M624S/IDT8M612S IDT71256 IDT8M624S) 8M624 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 MEGABIT 128K x 8 REGISTERED/BUFFERED/ LATCHED CMOS STATIC RAM SUBSYSTEMS IDT7M824 FAMILY FEATURES: DESCRIPTION: • High-density 1024K-bit (128K x 8-bit) CMOS static RAM modules with registered/buffered/latched addresses and l/Os The IDT7M824 fam ily is a set of 1024K-bit (128K x 8-bit) high­


    OCR Scan     		1024K-bit -15mA 64-pin, IDT49C802 IDT49C802 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1024K x 1 CMOS STATIC RAM MODULE IDT7MC4001 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Th e ID T7M C 4001 is a 1024K x 1 high-speed static RAM module with separate I/O . Th e m odule is constructed on a co­ fired ceram ic substrate using four 256K x 1 static RAMs in


    OCR Scan     		1024K IDT7MC4001 30-pin 500mV IDT7MC4001 7MC4001 PDF