Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2048KX Search Results

    2048KX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T 9722

    Abstract: Diode T 9722 EDI8G322048C
    Text: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package


    Original     		EDI8G322048C 2048Kx32 01581USA EDI8G322048C T 9722 Diode T 9722 PDF

    bq4017

    Abstract: bq4017Y
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit 36-Pin bq4017 bq4017Y PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70 PDF

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    bq4017

    Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit BQ4017MC-70 bq4017Y BQ4017YMC-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    bq4017

    Abstract: bq4017Y
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017Y PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    bq4017

    Abstract: bq4017Y
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017Y PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory


    OCR Scan     		EDI8G322048C 2048KX32 322048C 2048K 1024Kx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: h bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ g ral control c ircu itry and lith iu m


    OCR Scan     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K PDF

    Untitled

    Abstract: No abstract text available
    Text: ^E D I _ EDI8F82048C Electronic Dvtions Inc. Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM 2048Kx8 bit CMOS Static based on sixteen 128Kx8 Static RAMs mounted on a multi- Random Access Memory


    OCR Scan     		EDI8F82048C EDI8F82048C 2048Kx8 128Kx8 150ns EDI8F82048LP) EDI8F82048C70BSC EDI8F82048C85BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: m o EDI8G322048C i 2043Kx32 SRAMModtÉe ElfC TB O N C D O C N SN C . 2048Kx32Static RAM CMOS> High SpeedModule Features The EDI8G322048C is a high speed 64 megabit Static 2048Kx32 bit CMOS Static RAM module organized as 2048K words by 32 bits. This Random Access Memory


    OCR Scan     		EDI8G322048C 2043Kx32 2048Kx32Static EDI8G322048C 2048Kx32 2048K 1024Kx4 EDI8G322M8C EDI8G322048C20MMC EDI8G322048C25MMC PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium


    OCR Scan     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K 0003b11 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >• D a ta re te n tio n in th e absence of pow er T h e CM OS bq4017 is a n o n v o latile 16,777,216-bit sta tic RAM org an ized a s 2,09 7 ,1 5 2 w o rd s b y 8 b its. T h e in te g r a l c o n tro l c irc u itry a n d l it h ­


    OCR Scan     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit PDF

    A18E

    Abstract: A18E 40
    Text: bq4017/bq4017Y U IM IT R O O E - 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lith ­


    OCR Scan     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K A18E A18E 40 PDF

    D1581

    Abstract: OQ10 EDI8G322048C
    Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory


    OCR Scan     		EDI8G322048C 2048KX32 EDI8G322048C20MMC EDI8G322048C25MMC EDI8G322048C35MMC I8G322048C D1581 OQ10 EDI8G322048C PDF

    IC 4017 B

    Abstract: No abstract text available
    Text: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 w ords by 8 b its. The in te g ral control circu itry an d lith ­


    OCR Scan     		4017Y 2048Kx8 bq4017 216-bit bq4017/bq4017Y 2048K IC 4017 B PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1471 CYM1481 'is CYPRESS 1024KX 8 SRAM Module 2048KX 8 SRAM Module SEMICONDUCTOR Features Functional Description • High-density 8-/16-megabit SRAM modules T h e CYM 1471 an d CYM1481 are highp erform ance 8 -m egabit and 16-megabit static R A M m odules organized as 1024K


    OCR Scan     		CYM1471 CYM1481 8-/16-megabit CYM1460/CYM1461 1024KX 2048KX -120C 1471L PF--120C 1471PS--120C PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K x 8 SRAM Module 2048Kx 8 SRAM Module Features F unctional D escription • High-density 8-/16-megabit SRAM modules T he CYM1471 an d CYM 1481 are highperform ance 8-m egabit and 16-megabit static R A M m odules organized as 1024K


    OCR Scan     		CYM1471 CYM1481 1024K 2048Kx 8-/16-megabit CYM1471 16-megabit 1024K 2048K 1471L PDF