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    100N10 Search Results

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    100N10 Price and Stock

    Infineon Technologies AG IAUC100N10S5N040ATMA1

    MOSFET N-CH 100V 100A 8TDSON-34
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    Mouser Electronics IAUC100N10S5N040ATMA1 3,626
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    Rochester Electronics IAUC100N10S5N040ATMA1 8,259 1
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    Infineon Technologies AG BSC100N10NSFGATMA1

    MOSFET N-CH 100V 11.4/90A 8TDSON
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    STMicroelectronics STF100N10F7

    MOSFET N CH 100V 45A TO-220FP
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    DigiKey STF100N10F7 Tube 10,303 1
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    Mouser Electronics STF100N10F7 2,171
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    STMicroelectronics STF100N10F7 2,171 1
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    TME STF100N10F7 1
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    ComSIT USA STF100N10F7 1,000
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    Avnet Silica STF100N10F7 6,900 17 Weeks 50
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    STMicroelectronics ECMF4-40A100N10

    CMC 100MA 4LN SMD ESD
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    DigiKey ECMF4-40A100N10 Reel 6,000 3,000
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    Mouser Electronics ECMF4-40A100N10 526
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    STMicroelectronics ECMF4-40A100N10 526 1
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    Diotec Semiconductor AG DI100N10PQ-AQ

    MOSFET PWRQFN 5X6 100V 0.0045OHM
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    DigiKey DI100N10PQ-AQ Reel 5,000 5,000
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    DI100N10PQ-AQ Digi-Reel 5,000 1
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    Mouser Electronics DI100N10PQ-AQ 4,935
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    TME DI100N10PQ-AQ 1
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    100N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S3 DIODE schottky

    Abstract: 100N1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


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    PDF 100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky 100N1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω


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    PDF 100N10S1 100N10S2 100N10S3

    S3 DIODE schottky

    Abstract: 100N10S1
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)


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    PDF 100N10S1 100N10S2 100N10S3 OT-227 E153432 S3 DIODE schottky

    100N10S2

    Abstract: 100N10S1 pehf
    Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω


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    PDF 100N10S1 100N10S2 100N10S3 100N10S2 100N10S1 pehf

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS 100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


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    PDF IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10

    diode AR S1 99

    Abstract: S3 DIODE schottky 486 smps
    Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient


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    PDF 100N10S1 100N10S2 100N10S3 diode AR S1 99 S3 DIODE schottky 486 smps

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS 100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance


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    PDF STL100N10F7 DocID023656

    100N10F7

    Abstract: No abstract text available
    Text: 100N10F7, 100N10F7, 100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max 100 V 0.008 Ω 100N10F7 100N10F7


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    PDF STD100N10F7, STF100N10F7, STP100N10F7 O-220FP O-220 STD100N10F7 STF100N10F7 O-220FP O-220 100N10F7

    CON AT62B

    Abstract: ISA-A19 ISP1581 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic
    Text: UM10020-01 ISP1581 Scanner Eval Kit User’s Guide September 2002 File name of the previous revision was UM10003-02.pdf User’s Guide Rev 1.2 Revision History: Version Date 1.2 Sep, 2002 1.1 July 2002 1.0 April, 2002 Descriptions Divided the ISP1581 Evaluation Kit User’s Guide UM10003-02.pdf


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    PDF UM10020-01 ISP1581 UM10003-02 UM10019-01 UM10020-01 CON AT62B ISA-A19 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic

    STV6618

    Abstract: TQFP44
    Text: STV6618 Video Switch Matrix for DVDs Main Features • I²C Bus Control ■ 5 Y/CVBS Inputs, 3 Y/CVBS Outputs ■ 3 C Inputs, 1 C Output ■ 2 RGB/YPrPb Inputs, 1 RGB/YPrPb Output ■ 6 dB Gain on all 150 Ω Buffer Outputs ■ Integrated 150 Ω Buffers


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    PDF STV6618 TQFP44 STV6618 TQFP44

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


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    PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDSS 100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 3 4 • Ultra low on-resistance


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    PDF STL100N10F7 DocID023656

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS 100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


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    PDF IXFK100N10 IXFN150N10 O-264 ID120

    100N10NS

    Abstract: BSC100N10NSF IEC61249-2-21 JESD22
    Text: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


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    PDF BSC100N10NSF IEC61249-2-21 100N10NS 100N10NS IEC61249-2-21 JESD22

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    Untitled

    Abstract: No abstract text available
    Text: 100N10F7, 100N10F7, 100N10F7, 100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB 3 Order codes 1 3 VDS RDS on max ID PTOT 80 A


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    PDF STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 O-220FP O-220 STF100N10F7 STB100N10F7 STD100N10F7

    UM10019

    Abstract: isa slot pcb layout CON AT62B D14TEST at62b XC95144 ISA-A19 UM10019-01 ISP1581 AM29F160DB75EC
    Text: UM10019_2 ISP1581 PC Eval Kit User’s Guide December 2002 User’s Guide Rev. 1.3 Revision History: Version Date 1.3 Dec 2002 1.2 Sept 2002 1.1 July 2002 1.0 April 2002 Descriptions Updated Table 9-1. Divided the ISP1581 Evaluation Kit User’s Guide UM10003-02.pdf into


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    PDF UM10019 ISP1581 UM10003-02 UM10019-01 UM10020-01 UM10021-01 isa slot pcb layout CON AT62B D14TEST at62b XC95144 ISA-A19 AM29F160DB75EC

    isa slot pcb layout

    Abstract: XC95144 ISP1581 CON AT62B atapi firmware D14TEST xilinx 8051
    Text: Philips Semiconductors Connectivity July 2002 UM10003-02 ISP1581 Evaluation Kit User’s Guide Rev 1.1 Revision History: Version 1.1 Date July 2002 1.0 March 2002 Descriptions • Changed D14TEST.INF to PHKIT.INF and D14TEST.SYS to PHKIT.SYS. • Updated Section 11.3.


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    PDF UM10003-02 ISP1581 D14TEST ag5144-15PQ160I SOJ-32W isa slot pcb layout XC95144 CON AT62B atapi firmware xilinx 8051

    china tv schematic diagram

    Abstract: npn 100n CVBS to RGB power supply dvd player china Rgb to yprpb video player circuit diagram STV6618 TQFP44
    Text: STV6618 Video Switch Matrix for DVDs Main Features • I²C Bus Control ■ 5 Y/CVBS Inputs, 3 Y/CVBS Outputs ■ 3 C Inputs, 1 C Output ■ 2 RGB/YPrPb Inputs, 1 RGB/YPrPb Output ■ 6 dB Gain on all 150 Ω Buffer Outputs ■ Integrated 150 Ω Buffers


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    PDF STV6618 STV6618 china tv schematic diagram npn 100n CVBS to RGB power supply dvd player china Rgb to yprpb video player circuit diagram TQFP44

    Diode D25 N10 R

    Abstract: Diode D25 N10 P
    Text: XYS HiPerFET Power MOSFETs 100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


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    PDF IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    Untitled

    Abstract: No abstract text available
    Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100


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    PDF O-264 D-68623 100N10 150N10 4bflh25b

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan
    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan
    PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60