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Kyocera AVX Components 100B1R0BW500XT1K CAP CER 1PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B1R0BW500XT1K	Cut Tape	15,802		1	1 $8.81 10 $6.135 100 $4.7107 1000 $4.13106 10000 $4.13106	Buy Now
	100B1R0BW500XT1K	Digi-Reel	15,802		1	1 $8.81 10 $6.135 100 $4.7107 1000 $4.13106 10000 $4.13106	Buy Now
	100B1R0BW500XT1K	Reel	3,000		1,000	1 - 10 - 100 - 1000 $3.94965 10000 $3.79935	Buy Now
Avnet Americas	100B1R0BW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R0BW500XT1K					1 $6.27 10 $4.75 100 $3.61 1000 $2.97 10000 $2.88	Get Quote
Richardson RFPD	100B1R0BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.21 10000 $1.72	Buy Now
Kyocera AVX Components 100B1R0BW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B1R0BW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R0BW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R0BW500XC100		172			1 $6.65 10 $5.77 100 $4.43 1000 $3.76 10000 $3.69	Buy Now
Richardson RFPD	100B1R0BW500XC100		355		100	1 - 10 - 100 $3.57 1000 $2.16 10000 $1.69	Buy Now
Kyocera AVX Components 100B1R0BWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R0BWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R0BWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R0BWN500XT					1 - 10 - 100 - 1000 $3.64 10000 $3.64	Get Quote
Kyocera AVX Components 100B1R0BW500XTV MLC A/B/R - Bulk (Alt: 100B1R0BW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R0BW500XTV	Bulk		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R0BW500XTV					1 - 10 - 100 - 1000 $2.84 10000 $2.84	Get Quote
Kyocera AVX Components 100B1R0BW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R0BW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R0BW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R0BW500XT		139			1 $4.54 10 $3.91 100 $2.93 1000 $2.93 10000 $2.93	Buy Now
Newark	100B1R0BW500XT	Bulk			500	1 - 10 - 100 - 1000 $4.26 10000 $4.26	Buy Now
TTI	100B1R0BW500XT	Reel	500		500	1 - 10 - 100 - 1000 $2.87 10000 $2.87	Buy Now
Richardson RFPD	100B1R0BW500XT		500		500	1 - 10 - 100 - 1000 $2.21 10000 $1.72	Buy Now

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100B1R0BW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B1R0BW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111		Original	PDF
100B1R0BW500XT1K		American Technical Ceramics	Ceramic Capacitor 1PF 500V P90 1111		Original	PDF

100B1R0BW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
100B0R1BW Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
A113 Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1
100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW
MRF5S21045N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N
mosfet 1412 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 DS03-202RFPP mosfet 1412
MW4IC2020NBR1 Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR Text: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020 MW4IC2020MBR1 MW4IC2020GMBR1 Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020GMBR1 MW4IC2020MBR
ATC capacitor 100b Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130
A113 Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1	Original	PDF	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1
100B100JW500X Abstract: AGR09090EF JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A
A113 Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station	Original	PDF	MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 A113 AN1987 MW4IC2020GMBR1
gsm signal amplifier Abstract: 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 1, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 gsm signal amplifier 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
Untitled Abstract: No abstract text available Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1
MRF5S21045N Abstract: No abstract text available Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	PDF	MRF9130L MRF9130LR3 MRF9130LSR3
MW4IC2020NBR1 Abstract: A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020N MW4IC2020N MW4IC2020NBR1 MW4IC2020GNBR1 A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	PDF	AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)
Johanson Technology Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology
733W Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W
Motorola 506 Abstract: No abstract text available Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC	Original	PDF	MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 Motorola 506
MRF9130L Abstract: MRF9130LR3 MRF9130LSR3 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	PDF	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 MRF9130LSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	PDF	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	PDF	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3
100B1R0BW Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1

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100B1R0BW Price and Stock

Kyocera AVX Components 100B1R0BW500XT1K

Kyocera AVX Components 100B1R0BW500XC100

Kyocera AVX Components 100B1R0BWN500XT

Kyocera AVX Components 100B1R0BW500XTV

Kyocera AVX Components 100B1R0BW500XT

100B1R0BW Datasheets (2)

100B1R0BW Datasheets Context Search

100B0R1BW

A113

100B0R5BW

MRF5S21045N

Untitled

mosfet 1412

MW4IC2020NBR1

ATC capacitor 100b

A113

100B100JW500X

A113

gsm signal amplifier

Untitled

MRF5S21045N

Untitled

MW4IC2020NBR1

Untitled

Johanson Technology

733W

Motorola 506

MRF9130L

Untitled

Untitled

100B1R0BW