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    Text: SSS2N90A Advanced Power MOSFET FEATURES BVDgs - 900 V • Avalanche Rugged Technology 7.0 Q ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 1-5 A ■ Improved Gate Charge ■ Extended Safe Operating Area T 0 -2 2 0 F ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V


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