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    Abstract: No abstract text available
    Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF bbS3R31 0D30727 OT223 BUK482-60A QD3D731 bb53T31 D03D732 OT223.