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    Kyocera AVX Components 08055C103KAT2P

    CAP CER 10000PF 50V X7R 0805
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    Kyocera AVX Components 08055C103KAT2M

    CAP CER 10000PF 50V X7R 0805
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    Kyocera AVX Components 08055C103KAT4H

    CAP CER SMD
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    Kyocera AVX Components 08055C103KAT7A

    CAP CER SMD
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    Kyocera AVX Components 08055C103KAT2A

    Multilayer Ceramic Capacitor, 0.01 uF, 50 V, ? 10%, X7R, 0805 [2012 Metric] - Tape and Reel (Alt: KGM21NR71H103KT)
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    08055C103KAT Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    08055C103KAT1A AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-7 PLATED-NI/SN Original PDF
    08055C103KAT2A AVX General Specifications Original PDF
    08055C103KAT2A AVX Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes Original PDF
    08055C103KAT2A AVX Multilayer Ceramic Chip Capacitor Original PDF
    08055C103KAT2A AVX Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Capacitor, Ceramic Chip, 0805, 50V, X7R Temp, 10, 000pF, +/-10% Tolerance Scan PDF
    08055C103KAT2M AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-7 PLATED-NI/SN Original PDF
    08055C103KAT2P AVX Ceramic Capacitors, Capacitors, CAP CER 10000PF 50V 10% X7R 0805 Original PDF
    08055C103KAT4A AVX General Specifications Original PDF
    08055C103KAT4A AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Original PDF
    08055C103KAT7A AVX General Specifications Original PDF
    08055C103KAT9A AVX General Specifications Original PDF
    08055C103KATMA AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-7 PLATED-NI/SN Original PDF
    08055C103KATME AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-7 PLATED-NI/SN Original PDF
    08055C103KATNA AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-7 PLATED-NI/SN Original PDF
    08055C103KATRA AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Original PDF
    08055C103KATSA AVX CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Original PDF

    08055C103KAT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DAC5674 EVM User’s Guide September 2003 Wireless Infrastructure Products SWRU007 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original
    PDF DAC5674 SWRU007 SN74LVC04A DAC5674 4-Sep-2003

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNOA914 – March 2013 LP38798EVM User's Guide The LP38798EVM evaluation board is designed to demonstrate the capabilities of the LP38798SD-ADJ high performance LDO voltage regulator. It is intended to provide a flexible circuit configurations and


    Original
    PDF SNOA914 LP38798EVM LP38798SD-ADJ

    CMC 707 schematic diagram

    Abstract: HELA-10B HELA-10 600w class d circuit diagram schematics 08055C103KAT2A HELA-10A HELA-10C HELA-10D 10 watt power amplifier chassis schematic diagram an-60-009
    Text: AN-60-009 EA-7193 Application Note on HELA-10: HIGH IP3, WIDE BAND, LINEAR POWER AMPLIFIER Mini-Circuits Engineering Department P.O. Box 350166 Brooklyn, NY 11235 AN-60-009 Rev.: D M118643 07/23/08 File name: AN60009.doc This document and its contents are the property of Mini-Circuits


    Original
    PDF AN-60-009 EA-7193 HELA-10: AN-60-009 M118643 AN60009 HELA-10, HELA-10 CMC 707 schematic diagram HELA-10B 600w class d circuit diagram schematics 08055C103KAT2A HELA-10A HELA-10C HELA-10D 10 watt power amplifier chassis schematic diagram

    1210YD106KAT2A

    Abstract: MP1527DR 08055C103KAT2A 08055C472KAT2A EC01 EV0034 MBR0520L MP1527
    Text: EV0034 2A, 1.3MHz Step-Up Converter The Future of Analog IC Technology EVALUATION BOARD DESCRIPTION FEATURES The EV0034 is a MP1527 evaluation board configured to provide a regulated 12V output at up to 300mA from a 2.6V input or higher. The output voltage is adjustable from VIN to 25V by


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    PDF EV0034 EV0034 MP1527 300mA 1210YD106KAT2A MP1527DR 08055C103KAT2A 08055C472KAT2A EC01 MBR0520L

    C0603X7R500-102KNE

    Abstract: C0805X7R160-105KNE how to test smd MOSFET with digital multimeter R101-R103 lug thermistor ntc lug p26 smd S4 SMD diode mark smd schottky diode s4 smd schottky diode s4 SOD-123
    Text: ISL6308EVAL1: Three Phase Buck Converter with Integrated High Current 5-12V Drivers Application Note July 11, 2005 AN1199.0 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low


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    PDF ISL6308EVAL1: AN1199 ISL6308EVAL1 C0603X7R500-102KNE C0805X7R160-105KNE how to test smd MOSFET with digital multimeter R101-R103 lug thermistor ntc lug p26 smd S4 SMD diode mark smd schottky diode s4 smd schottky diode s4 SOD-123

    C49-C54

    Abstract: 12V 10A voltage regulators 805 smd code capacitor ntc lug SMD capacitors CODES C0805COG500-101JNE R38-R42 transistor SMD p12 transistor SMD p23 BAV99TA-T
    Text: ISL6310EVAL1Z: Two Phase Buck Converter with Integrated High Current 5V to 12V Drivers Application Note December 12, 2006 AN1197.1 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low


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    PDF ISL6310EVAL1Z: AN1197 ISL6310EVAL1Z C49-C54 12V 10A voltage regulators 805 smd code capacitor ntc lug SMD capacitors CODES C0805COG500-101JNE R38-R42 transistor SMD p12 transistor SMD p23 BAV99TA-T

    capacitor a 475v smd

    Abstract: capacitor 475v smd erj6enf1002v 1210YD226KAT2A B340A-13 EV2351DQ-00A MP2351 QFN10 erj-6enf1002v panasonic ceramic capacitor
    Text: EV2351DQ-00A 4.75V to 23V Input, 1.5A Output Step-Down DC/DC Converter The Future of Analog IC Technology EVALUATION BOARD - INITIAL RELEASE GENERAL DESCRIPTION FEATURES The EV2351DQ-00A is the Evaluation Board for MPS’ MP2351 Step-Down DC/DC Converter. It


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    PDF EV2351DQ-00A EV2351DQ-00A MP2351 capacitor a 475v smd capacitor 475v smd erj6enf1002v 1210YD226KAT2A B340A-13 QFN10 erj-6enf1002v panasonic ceramic capacitor

    Untitled

    Abstract: No abstract text available
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


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    PDF MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    C-XM-99-001-01

    Abstract: pep cxm MRF21010
    Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm

    Switchcraft 712A Instruction

    Abstract: D6541
    Text: 71M6541 Demo Board REV 3.0 User’s Manual Rev 4.0; 12/12 Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time.


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    PDF 71M6541 71M6601) Switchcraft 712A Instruction D6541

    LM556 PWM

    Abstract: lm556 application notes LM324AM diode U3d LM556 timer diode U3d on led driver board schematic LED astable multivibrator RD-168 ic lm324am datasheet
    Text: National Semiconductor RD-168 Applications Design Center November 2008 1.0 Design Specifications Inputs Output #1 VinMin=6V Vout1=20V VinMax=12V Iout1=0.1A The ambient light adaptive LED driver automatically adjusts display brightness for changing ambient light conditions, providing a more viewable display with better contrast. The design drives five series connected LEDs from an input voltage


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    PDF RD-168 CSP-9-111S2) CSP-9-111S2. LM556 PWM lm556 application notes LM324AM diode U3d LM556 timer diode U3d on led driver board schematic LED astable multivibrator RD-168 ic lm324am datasheet

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


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    PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    MC74HC125D

    Abstract: KP-3216MGCK OTQ-64 cr08051002jtr Berg Stick 3x1 CR0805-1003JTR PROG08SZ MC33172D MC34063AD MC68HC908LJ12
    Text: M68ICS08LJUM/D M68ICS08LJ In-Circuit Simulator User’s Manual metrowerks A Motorola Company Copyright. 2001. Metrowerks Corp. ALL RIGHTS RESERVED The reproduction and use of this document and related materials are governed by a license agreement between Metrowerks Corp. and its licensee. Consult that license agreement before use of any portion of


    Original
    PDF M68ICS08LJUM/D M68ICS08LJ MC74HC125D KP-3216MGCK OTQ-64 cr08051002jtr Berg Stick 3x1 CR0805-1003JTR PROG08SZ MC33172D MC34063AD MC68HC908LJ12

    capacitor 0805 avx

    Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original
    PDF MRF21010/D MRF21010 capacitor 0805 avx MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    3x1 berg connector

    Abstract: mx045 TG110-S050N5 CONN RJ 45 MOD RJ45 berg melf smd 1n914 MX045 cts oscillator TG110-S050N2 LXT971A schematic checklist of lxt971a
    Text: Intel LXD972M Transceiver Demo Board Board Rev A1 Preliminary User’s Guide October 2004 Document Number: 303125 Revision Number: 002 Revision Date: October 22, 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY


    Original
    PDF LXD972M TP6-14, TP31-33 74LVC244 SN74LVC244ADW LXT977/LXT972M LQFP48C) 74LVX14 TC74LVX14FN 3x1 berg connector mx045 TG110-S050N5 CONN RJ 45 MOD RJ45 berg melf smd 1n914 MX045 cts oscillator TG110-S050N2 LXT971A schematic checklist of lxt971a

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage


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    PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    PDF

    Transistor J438

    Abstract: MRF21010 100B102JW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21010 MRF21010S Transistor J438 100B102JW

    AN1211

    Abstract: smd schottky diode s4 SOD-123 1211 transistor PDF DOWN LOAD c0805x7r500-223kne c1206x7r160 smd diode S7 R50 SOT23 SMD code P32 23 smd ntc lug p28 smd
    Text: ISL8103EVAL1: Three Phase Buck Converter with Integrated High Current 5-12V Drivers Application Note January 3, 2006 AN1211.0 Author: Nasser A. Ismail Introduction The progress in many parts of modern power systems such as DDR/Chipset core voltage regulators, high current low


    Original
    PDF ISL8103EVAL1: AN1211 ISL8103EVAL1 smd schottky diode s4 SOD-123 1211 transistor PDF DOWN LOAD c0805x7r500-223kne c1206x7r160 smd diode S7 R50 SOT23 SMD code P32 23 smd ntc lug p28 smd

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010

    MRF21010

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21010 MRF21010LR1 MRF21010LSR1

    MRF21010R1

    Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


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    PDF MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


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