08051J2R2BBT Search Results

08051J2R2BBT Price and Stock

Filter by Manufacturer


Kyocera AVX Components 08051J2R2BBTTR CAP THIN FILM 2.2PF 100V 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	08051J2R2BBTTR	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.62006	Buy Now
Avnet Americas	08051J2R2BBTTR	Reel		8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.6216	Buy Now
	08051J2R2BBTTR	Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.4788	Buy Now
Mouser Electronics	08051J2R2BBTTR					1 - 10 - 100 - 1000 - 10000 $0.489	Get Quote
Newark	08051J2R2BBTTR	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.506	Buy Now
Bristol Electronics	08051J2R2BBTTR		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components	08051J2R2BBTTR		4,467			1 $1.1004 10 $1.1004 100 $1.1004 1000 $1.1004 10000 $0.3851	Buy Now
Richardson RFPD	08051J2R2BBTTR				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	08051J2R2BBTTR	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 08051J2R2BBTTR-M CAP THIN FILM 2.2PF 100V 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	08051J2R2BBTTR-M	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.69216	Buy Now
Kyocera AVX Components 08051J2R2BBTTR-3 CAP THIN FILM 2.2PF 100V 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	08051J2R2BBTTR-3	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.64272	Buy Now
Kyocera AVX Components 08051J2R2BBTTR\\M Cap Ceramic 2.2pF 100V C0G 0.1pF SMD 0805 125?C T/R - Tape and Reel (Alt: 08051J2R2BBTTR\\M)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	08051J2R2BBTTR\\M	Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.6072	Buy Now
Newark	08051J2R2BBTTR\\M	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.639	Buy Now
Richardson RFPD	08051J2R2BBTTR\\M				3,000	1 - 10 - 100 - 1000 - 10000 $0.62	Buy Now
Kyocera AVX Components 08051J2R2BBTTR\M Silicon RF Capacitors / Thin Film 100V 0.12pF .1pFTol ThinFilm 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	08051J2R2BBTTR\M					1 - 10 - 100 - 1000 - 10000 $0.618	Get Quote

Find more 08051J2R2BBT price and stock on Findchips.com

08051J2R2BBT Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
08051J2R2BBTTR	AVX	Thin-Film Chip Capacitor	Original	PDF
08051J2R2BBTTR3	AVX	Capacitors - Thin Film Capacitors - CAP THIN FILM 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTR3	AVX	Thin Film Capacitors, Capacitors, CAP THIN FILM 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTR\3	Kyocera AVX Components	Thin Film Capacitor 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTR\3	Kyocera AVX Components	Thin Film Capacitor 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTRM	AVX	Thin Film Capacitors, Capacitors, CAP THIN FILM 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTRM	AVX	Capacitors - Thin Film Capacitors - CAP THIN FILM 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTR\M	Kyocera AVX Components	Thin Film Capacitor 2.2PF 100V 0805	Original	PDF
08051J2R2BBTTR\M	Kyocera AVX Components	Thin Film Capacitor 2.2PF 100V 0805	Original	PDF

08051J2R2BBT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm
marking WB4 Abstract: NIPPON CHEMI nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	PDF	MRF377H MRF377HR3 MRF377HR5 MRF377H marking WB4 NIPPON CHEMI nippon capacitors
845 motherboard circuit Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5 Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	PDF	MRF377/D MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0603HC-10NXJB Coilcraft Rogers 3006 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
capacitor 0805 avx Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23 Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to	Original	PDF	MRF21010/D MRF21010 capacitor 0805 avx MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
panasonic inverter dv 707 manual Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594	Original	PDF
Transistor J438 Abstract: MRF21010 100B102JW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010S Transistor J438 100B102JW
2DS1047 Abstract: nippon capacitors Nippon chemi Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	PDF	MRF377 MRF377R3 MRF377R5 MRF377 2DS1047 nippon capacitors Nippon chemi
MRF21010 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100
MRF21010R1 Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	PDF	MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Transistor J182 Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	PDF	MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA
Untitled Abstract: No abstract text available Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	PDF	MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3

MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B
MRF377HR3 Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	PDF	MRF377HR3 MRF377HR5 NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
10ACPR Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010LR1 MRF21010LSR1 10ACPR
100B220GW Abstract: 100B100GW Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100R3 MRF9100SR3 100B220GW 100B100GW
capacitor 2200 micro M Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking
MRF377 Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	PDF	MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
MRF21010 Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking Text: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 MRF21010 MRF21010LSR1 Vishay Capacitor marking
capacitor 2200 micro M Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	PDF	MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M MRF21010LSR1 08053G105ZATEA MRF21010
MOTOROLA SCR 1725 Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1	Original	PDF	DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

Privacy Settings

08051J2R2BBT Search Results

08051J2R2BBT Price and Stock

Kyocera AVX Components 08051J2R2BBTTR

Kyocera AVX Components 08051J2R2BBTTR-M

Kyocera AVX Components 08051J2R2BBTTR-3

Kyocera AVX Components 08051J2R2BBTTR\\M

Kyocera AVX Components 08051J2R2BBTTR\M

08051J2R2BBT Datasheets (9)

08051J2R2BBT Datasheets Context Search

Untitled

C-XM-99-001-01

marking WB4

845 motherboard circuit

capacitor 0805 avx

panasonic inverter dv 707 manual

Transistor J438

2DS1047

MRF21010

Untitled

MRF21010R1

2a258 transistor

Transistor J182

Untitled

MRF21010

MRF377HR3

10ACPR

100B220GW

capacitor 2200 micro M

MRF377

MRF21010

capacitor 2200 micro M

MOTOROLA SCR 1725

Untitled