Untitled
Abstract: No abstract text available
Text: F ECO-12-018934 05NOV12 CWR OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE
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ECO-12-018934
05NOV12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER IEC60 603-13 A
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UL94-V0
IEC60
12EMPERATURE:
05-NOV-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STEEL TIN PLATED QUALITY CLASS: 3 AS PER CECC 75 301-802 A ENVIRONMENTAL
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UL94-V0
05-NOV-12
07-DEC-09
19-NOV-09
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MARKING 402M
Abstract: M55342/01
Text: E/H Military M/D55342 www.vishay.com Vishay Dale Thin Film QPL MIL-PRF-55342 Qualified Thin Film Resistor, Surface Mount Chip FEATURES Actual Size M55342/02 Thin Film Mil chip resistors feature all sputtered wraparound termination for excellent adhesion and dimensional
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M/D55342)
MIL-PRF-55342
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MARKING 402M
M55342/01
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4630DY www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4630DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4136DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4136DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4463CDY www.vishay.com Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4463CDY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 MAX TEMPERATURE: 220°C 10 S COLOR: WHITE CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING/ STEEL TIN PLATED QUALITY CLASS: 3 AS PER IEC 60 603-13
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UL94-V0
05-NOV-12
07-DEC-09
19-NOV-09
01-OCT-09
29-NOV-06
30-MAR-04
14-JUN-99
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK FLAMABILITY RATING: UL94-V0 CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER CECC 75 301-802
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UL94-V0
E323964
23-FEB-12
05-AUG-10
07-DEC-09
19-NOV-09
06-JAN-14
05-NOV-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 C B TECHNICAL CHARACTERISTICS PIN 9 A MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER CECC 75 301-802
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UL94-V0
E323964
06-JAN-14
05-NOV-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER IEC60 603-13 A ENVIRONMENTAL
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UL94-V0
IEC60
20-NOV-12
05-NOV-12
23-FEB-12
07-DEC-09
19-NOV-09
21-SEP-09
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4160DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4160DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4186DY www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4186DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4425DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4425DDY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4483ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4483ADY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 C B TECHNICAL CHARACTERISTICS PIN 9 A MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER CECC 75 301-802
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UL94-V0
05-NOV-12
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VOM1271
Abstract: VOM1271T M1271 Vo1263 mosfet Application Notes
Text: VOM1271 www.vishay.com Vishay Semiconductors Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay FEATURES • Open circuit voltage at IF = 10 mA, 8.4 V typical 1 • Short circuit current at IF = 10 mA, 15 A typical 4 • Isolation test voltage 4500 VRMS
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VOM1271
i179066
VOM1271
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VOM1271T
M1271
Vo1263
mosfet Application Notes
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Untitled
Abstract: No abstract text available
Text: UBQ10A05L04 DESCRIPTION UBQ10A05L04 is a ultra low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by electrostatic discharge ESD ,cable discharge
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UBQ10A05L04
UBQ10A05L04
QFN-10
006REF
020BSC
15REF
05-Nov-12
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Untitled
Abstract: No abstract text available
Text: SQD50N05-11L www.vishay.com Vishay Siliconix Automotive N-Channel 50 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 50 RDS(on) () at VGS = 10 V 0.011 RDS(on) () at VGS = 4.5 V 0.015 ID (A) 50 Configuration TrenchFET Power MOSFET
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SQD50N05-11L
AEC-Q101
O-252
SQD50N05-11L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4465ADY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4465ADY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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69847
Abstract: No abstract text available
Text: SPICE Device Model Si4778DY www.vishay.com Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si4778DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
69847
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4497DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si4497DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 MAX TEMPERATURE: 220°C 10 S COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER IEC60 603-13
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UL94-V0
IEC60
E323964
25VOLTAGE:
06-JAN-14
05-NOV-12
23-FEB-12
26-OCT-10
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Untitled
Abstract: No abstract text available
Text: Drg No. C U 76340Y M ETRIC 7 6 5 4 3 2 1 28.51 2-4-1008 Rov G A3 55.00 0D 30.50 / l_ i THREAD F HEAT SHRINK BOOT TO SUIT 22 AWG WIRE MAX. NOTE 1. FRONT SHELL AVAILABLE IN THE FOLLOWING POLARISATIONS - N,A,B,C,D. 2. BACKSHELLS AVAILABLE IN VARIOUS SIZES PER CONTACT CONFIGURATION.
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OCR Scan
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76340Y
T4924.
BBAI1330.
CU76340Y
CU76339Y)
ov-12
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