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    05D250 Search Results

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    05D250 Price and Stock

    Samtec Inc FJ-05-D-25.00-4

    CABLE FFC/FPC 5POS 1MM 25"
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    DigiKey FJ-05-D-25.00-4 Bulk 1
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    Mouser Electronics FJ-05-D-25.00-4
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    Avnet Abacus FJ-05-D-25.00-4 6 Weeks 1
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    Samtec Inc IDSD-05-D-25.00

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-05-D-25.00 Bulk 1
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    Mouser Electronics IDSD-05-D-25.00
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    Samtec Inc IDSD-05-D-25.00-G

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-05-D-25.00-G Bulk 1
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    Avnet Americas IDSD-05-D-25.00-G Bulk 1
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    Mouser Electronics IDSD-05-D-25.00-G
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    Master Electronics IDSD-05-D-25.00-G
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    Samtec Inc IDSS-05-D-25.00-T

    SLIM BODY SINGLE-ROW IDC SOCKET
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    DigiKey IDSS-05-D-25.00-T Bulk 1
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    Mouser Electronics IDSS-05-D-25.00-T
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    Master Electronics IDSS-05-D-25.00-T
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    Sager IDSS-05-D-25.00-T 1
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    Samtec Inc HCSS-05-D-25.00-01

    IDC SOCKET AND TERMINAL CABLE AS
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    DigiKey HCSS-05-D-25.00-01 Bulk 1
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    Avnet Americas HCSS-05-D-25.00-01 Bulk 1
    • 1 $8.62
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    Mouser Electronics HCSS-05-D-25.00-01
    • 1 $8.62
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    Master Electronics HCSS-05-D-25.00-01
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    Find more 05D250 price and stock on Findchips.com

    05D250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2505 Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters


    Original     		PDF 05D2505 5SYA1114-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters


    Original     		PDF 05D2501 CH-5600

    GTO ABB

    Abstract: 05d2505
    Text: Key Parameters VRRM = 2500 IFAVM = 420 IFRMS = 670 IFSM = 8.5 VF0 = 1.70 rF = 0.62 VDClink = 1500 V A A kA V Fast Recovery Diode 5SDF 05D2505 mΩ V Doc. No. 5SYA 1114-03 July 98 •Patented free-floating silicon technology •Low on-state and switching losses


    Original     		PDF 05D2505 CH-5600 GTO ABB 05d2505

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 2500 IFAVM = 490 IFRMS = 770 IFSM = 8.5 VF0 = 1.40 rF = 0.52 VDClink = 1100 V A A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 July 98 Features •Patented free-floating silicon technology •Low switching losses


    Original     		PDF 05D2501 CH-5600

    KA 490

    Abstract: 85103 DIODE
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5x103 1.4 0.52 1100 V A A V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO


    Original     		PDF 05D2501 5SYA1112-03 CH-5600 KA 490 85103 DIODE

    RCD snubber

    Abstract: 05d2505
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V Fast Recovery Diode 5SDF 05D2505 mΩ V Doc. No. 5SYA 1114-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters


    Original     		PDF 05D2505 CH-5600 RCD snubber 05d2505

    ABB Semiconductors

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters


    Original     		PDF 05D2501 5SYA1112-03 CH-5600 ABB Semiconductors

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		PDF 01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


    OCR Scan     		PDF 15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV

    FSV 052

    Abstract: No abstract text available
    Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan     		PDF 05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052