SMV1204
Abstract: SMV1200-02 SMV1200-04 SMV1200-05 SMV1200-07 SMV1201-16 SMV1201-20 SMV1204-99 SMV1411
Text: Surface-Mounted Varactor and Multiplier Devices and Capacitors alpha IN] / SEMICONDUCTOR 4AE D 05A5443 0001334 40f l T -& 7-h *A LP Features • ■ ■ ■ ■ Description The traditional quality of Alpha varactor devices is available for volume production operations in the form of
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OT-23
SMV1204-05
SMV1204-99
SMV1204-99.
SMV1204
SMV1200-02
SMV1200-04
SMV1200-05
SMV1200-07
SMV1201-16
SMV1201-20
SMV1411
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Untitled
Abstract: No abstract text available
Text: ALPHA IN»/ SEMICONDUCTOR 4ÛE 1> • 05A5443 D0D1133 7QT ■ ALP " T ‘O ' 1 ^ 7 High Frequency SOT’s Features: ■ Industry Standard Footprint ■ High Frequency Performance ■ ■ ■ Optimized Series Resistance Tape and Reel for Pick & Place 100% DC Tested
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05A5443
D0D1133
SMS3989
SMS3988
SMS1526-20
SMS1526-15
SMS1526-10
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HP STEP RECOVERY DIODES
Abstract: construction of varactor diode varactor diode application "Step Recovery Diode" M92A DVA6735-12 DVA6735-18 DVA6735-24 DVA6736-06 DVA6736-12
Text: A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips - ALPHA INI/ S E U I C O N D U C T O R USE J 05A5443 DDQ1374 Gc14 • ALP Features ■ High Efficiency ■ High Power Handling ■ High Reliability Description Alpha A-Mode diodes are oxide passivated, epitaxial
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05A5443
DVA6738-06
DVA6738-12
DVA6738-18
DVA6738-24
DVA6738-30
HP STEP RECOVERY DIODES
construction of varactor diode
varactor diode application
"Step Recovery Diode"
M92A
DVA6735-12
DVA6735-18
DVA6735-24
DVA6736-06
DVA6736-12
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DDB-4503
Abstract: KA band detector
Text: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction
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T-07-0
05A5443
0D0D373
0a37L,
DDB-4503
KA band detector
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■
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DC-2000
of-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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DMJ3086
Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Text: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages
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DMV3946-000
DMB4500-000
DMB4501-000
DMB6780-000
DMB3000-000
DMB6782-000
DMB3001-000
DMB6781-000
DMB3003-000
DMB3004-000
DMJ3086
DMJ4317
DME4750-000
DMF3068-000
mip 290
dmf5818
DMF6554-000
DME3040-000
DMJ3181-000
DMF3291-000
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DKV3803-30
Abstract: DKV6520 adkv LA 6520 DKV6520-06 DKV6520-12 DKV6525-06 DKV6525-12 dkv3803-23 DKV6522-24
Text: Silicon Hyperabrupt Tuning Diodes DKV6520 Series ALPHA IN] / S E M I C O N D U C T O R 4fiE D 05Ô5443 Q Q D 1 3 n ITI IALP Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts
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DKV6520
CKV2020
DKV3801
DKV3802
DKV3803
DKV3804
QQD13n
DKV3802-26
DKV3802-27
DKV3803-30
adkv
LA 6520
DKV6520-06
DKV6520-12
DKV6525-06
DKV6525-12
dkv3803-23
DKV6522-24
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AD004T2-00
Abstract: AD004T2-11 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS116-59
Text: GaAs MMIC 2 Watt High Linearity Cellular SPDT Switch DC-2000 MHz Ë B Â Îp fi A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■o J2 ■ Extremely Low Cost ■ Requires Fixed Positive Bias
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DC-2000
AS116-59
applications32
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AD004T2-00
AD004T2-11
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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Untitled
Abstract: No abstract text available
Text: EUAIph Surface Mount GaAs MESFET AF100-32 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel Description
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AF100-32
AF100-32
SpecificatioT002D8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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180 Degree hybrid ku band
Abstract: No abstract text available
Text: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
180 Degree hybrid ku band
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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