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    0319B Search Results

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    0319B Price and Stock

    RAF Electronic Hardware M0319-B

    METRIC CAPTIVE PANELPLAIN BRASS6
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    TE Connectivity 202M903-19B

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    TE Connectivity 202M503-19B

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    TE Connectivity 219M003-19B04

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    Mouser Electronics 219M003-19B04
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    VPG Transducers Y1365V0319BA9R

    SMN 10K/2K2/2K2/10K TCR2 B A S T
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    Avnet Americas Y1365V0319BA9R Reel 25
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    0319B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0319-B RAF Electronic Hardware CAPTIVE PANELPLAIN BRASS3/4HD X Original PDF

    0319B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SY68730ZC

    Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
    Text: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18


    Original     		PDF KS8695PX KSZ8695PX KS8721BL KS8995M KS8995X KS8995E SY68730ZC MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX

    CMOS Logic NOT ICs 8 PIN

    Abstract: Gate array logic AT88SC CMOS TTL Logic Family Specifications AT88SC200 atmel 048 AT88SC8100
    Text: E2 Logic ICs Features Parallel E2PROM Memory 8 bit word Gate Array for Logic Design Up to 120 I/O Low Voltage Operation (2.7 to 5.5 Volts) Single Voltage Supply Operation Performs Page Write Function Manufactured Using Low Power CMOS Technology Write or Erase Time: 10 ms Maximum


    Original     		PDF AT88SC150 AT88SC200 AT88SC220 AT88SC250 AT88SC410 AT88SC450 AT88SC8100 AT88SC1610 CMOS Logic NOT ICs 8 PIN Gate array logic AT88SC CMOS TTL Logic Family Specifications AT88SC200 atmel 048 AT88SC8100

    sy10s897jc

    Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
    Text: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2


    Original     		PDF KS8695PX MIC59P50 MIC10937P MIC2214PM MIC2198 SY88953L MIC2550 sy10s897jc cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003

    B1340

    Abstract: sy10s897 TSMC 0.18 um CMOS 2A243 bcd3 cmos tsmc 0.18 TSMC 0.25Um MIC29203BU Unisem B816E
    Text: Q1-2004-MICREL- PKG STORAGE LIFE TEST BAKE TA = + 150C Package Family PKG Type Lds Device WM W-SOIC W-SOIC W-SOIC WSOIC WSOIC WSOIC WSOIC WSOIC WSOIC WSOIC WSOIC 16 16 16 20 28 28 28 28 28 28 28 MIC2027 MIC2527 MIC2527 MIC2177 MIC1700B SY69952ZC SY69952ZC


    Original     		PDF Q1-2004-MICREL- MIC2027 MIC2527 MIC2177 MIC1700B SY69952ZC SY87701V B1340 sy10s897 TSMC 0.18 um CMOS 2A243 bcd3 cmos tsmc 0.18 TSMC 0.25Um MIC29203BU Unisem B816E

    ATMEL/437

    Abstract: No abstract text available
    Text: E2 Logic ICs Features • • • • • • • • • • • Parallel E^PROM Memory 8 bit word Gate Array for Logic Design Up to 120 I/O Low Voltage Operation (2.7 to 5.5 Volts) Single Voltage Supply Operation Performs Page Write Function Manufactured Using Low Power CMOS Technology


    OCR Scan     		PDF AT88SC150 AT88SC200 AT88SC220 AT88SC250 AT88SC410 AT88SC450 AT88SC8100 AT88SC1610 1G74177 ATMEL/437

    cmos ics manufacturer and its specification

    Abstract: AT88SC200 AT88SC Atmel 83
    Text: E2 Logic ICs Features Parallel E2PROM Memory 8 bit word Gats Array for Logic Design Up to 120 I/O Low Voltage Operation (2.7 to 5.5 Volts) Single Voltage Supply Operation Performs Page Write Function Manufactured Using Low Power CMOS Technology Write or Erase Time: 10 ms Maximum


    OCR Scan     		PDF AT88SCXXXprovides 16Kbits cmos ics manufacturer and its specification AT88SC200 AT88SC Atmel 83

    atmel 048

    Abstract: AT88SC200 AT88SC8100
    Text: E2 Logic ICs Features Parallel E2PROM Memory 8 bit word Gats Array for Logic Design Up to 120 I/O Low Voltage Operation (2.7 to 5.5 Volts) Single Voltage Supply Operation Performs Page Write Function Manufactured Using Low Power CMOS Technology Write or Erase Time: 10 ms Maximum


    OCR Scan     		PDF AT88SCXXXprovides 16Kbits atmel 048 AT88SC200 AT88SC8100

    DC-06

    Abstract: No abstract text available
    Text: " H Y U N D A I H Y 6 2 V 2 5 6 B S e r ie s _ 32K x 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that


    OCR Scan     		PDF HY62V256B 55/70/85/100ns 0319B DC06-11-MAY95 HY82V256BLP HY62V256BU HY62V256BLT1 DC-06