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    BSC030P03NS3

    Abstract: 030P3NS
    Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 A • V GS=25 V, specially suited for notebook applications


    Original     		PDF BSC030P03NS3 030P3NS 030P3NS

    030P3NS

    Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSC030P03NS3
    Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 • V GS=25 V, specially suited for notebook applications


    Original     		PDF BSC030P03NS3 IEC61249-2-21 030P3NS 030P3NS IEC61249-2-21 JESD22 JESD22-A114

    030P3NS

    Abstract: BSC030P03NS3
    Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 A • V GS=25 V, specially suited for notebook applications


    Original     		PDF BSC030P03NS3 030P3NS 030P3NS