Untitled
Abstract: No abstract text available
Text: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed
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Am27X512
Am33C93A
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Untitled
Abstract: No abstract text available
Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase
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32-Pin
Am28F512
28F5l
Am28F512-75
02S752A
QD32bbS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F400AT/Am29F400AB
8-Bit/262
16-Bit)
44-pin
48-pin
0E5752Ã
Am29F400T/Am29F400B
18612B.
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28F020
Abstract: AM28F020
Text: a Am28F020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High perform ance — 90 ns m aximum access time ■ ■ CMOS Low pow er consum ption — 100 nA m aximum standby current
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Am28F020
32-Pin
-32-pin
28F020
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Untitled
Abstract: No abstract text available
Text: ADV MI CRO MEMORY 4ÛE D n 05S7S5Ô QQaGSbS t> • AMD4 T—4 6 —1 3 -2 5 Am27X128 Advanced Micro Devices 16,384 X 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed
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05S7S5Ã
Am27X128
KS000010
0205-005A
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programming AM29F400
Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
44-pin
48-pin
D257S2Ã
003S5bb
programming AM29F400
TSOP 48 Package am29f400
AM29F400T
AM29F400
Am29f400 equivalent
AM29 FLASH
OES752
29f400b
AM29F400TB
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Untitled
Abstract: No abstract text available
Text: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current
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Am28F256A
32-Pin
033A1b
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Am2BF010A
Abstract: to525 Transistor 2SC 2166
Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■
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Am28F010A
32-Pin
0D327b5
Am2BF010A
to525
Transistor 2SC 2166
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3251b
Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands
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Am29F040
32-pin
3251b
29F040
3251L
AM29F040-75JC
AM29F040A
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Untitled
Abstract: No abstract text available
Text: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements
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Am29F100T/Am29F100B
8-Bit/65
16-Bit)
48-pin
29F100T/Am29F100B
29F100
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} Tb D E | 02S7S2Û DDEbSST Am93L469 5 1 2 x9 TTL Low-Power Tag Buffer Am93L469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 45-ns address to comparator output MATCH Replaces six or more integrated circuits with a single device
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02S7S2Ã
Am93L469
45-ns
Am93469
02S752A
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current
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Am28F256A
32-pin
28F256A
0D32b3M
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Untitled
Abstract: No abstract text available
Text: a Advanced Micro Devices Am27X256 256 Kilobit 32,768 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime
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Am27X256
Am33C93A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements
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Am29LV800T/Am29LV800B
8-Bit/524
16-Bit)
44-pin
48-pin
16-038-S044-2
752ft
003355b
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at
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16-Megabit
48-pin
Am29F016
G25752A
0033DSb
TSR048
16-038-TS48
DA104
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY a A m 2 9 F 1 0 0 T /A m 2 9 F 1 OOB 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ±1 0 % write and erase, read — Minimizes system level power requirements
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8-Bit/65
16-Bit)
44-pin
48-pin
CP-10
3M-8/94-0
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