LRC02P
Abstract: Phycomp 2350 yageo Phycomp 2350 1206 iec 60068 2 29 LRC01P
Text: DATA SHEET LOW-OHMIC POWER CHIP RESISTORS LRC01P/02P 5%; 1%, 0.5W Product Specification – Jul 29, 2003 V.0 size 1206 Phycomp Product specification Low-ohmic power chip resistors size 1206 LRC01P/02P 5%; 1%, 0.5W FEATURES • Reduced size of final equipment
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LRC01P/02P
10-6/K
LRC02P
Phycomp 2350
yageo Phycomp 2350 1206
iec 60068 2 29
LRC01P
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ZY180L
Abstract: 1600 v mosfet
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode Preliminary data D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C
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1600-02P
14Source
20090924a
ZY180L
1600 v mosfet
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Untitled
Abstract: No abstract text available
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mΩ max. N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900
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1600-02P
20100302b
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ZY180L
Abstract: VMO 1600-02P 1600-02P
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900 1600
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1600-02P
14Source
20100302b
ZY180L
VMO 1600-02P
1600-02P
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1600-02P
Abstract: 1600 v mosfet VMO 1600-02P
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25
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1600-02P
14Source
20100302b
1600-02P
1600 v mosfet
VMO 1600-02P
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2N7002 MARKING 702
Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
2N7002 MARKING 702
2n7002 MARKING
2N7002 PHILIPS MARKING
BSS84 MARKING CODE
marking 702 sot23
Philips MARKING CODE
BSN20 MARKING
sot23 02p
PMBF170 pkx
codes marking 2N7002
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2N7002 PHILIPS MARKING
Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
2N7002 PHILIPS MARKING
2N7002 MARKING 702
Marking codes
2N7002
2n7002 MARKING
Type Transistors 702
codes marking 2N7002
sot23 02p
marking 702 sot23
BSN20 MARKING
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AXICOM IM03
Abstract: AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I
Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR
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IM48GR
IM61GR,
IM42PNS
IM41X,
IMF61,
IMB41C,
IMB42C
IM46CGR,
IMF68HR
28APR2010
AXICOM IM03
AXICOM IM06
AXICOM IM02
axicom im07
AXICOM im41
AXICOM im42
axicom im01
IMC03
IM03D
IM48I
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7168-m
Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR
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IM48GR
IM61GR,
IM42PNS
IM41X,
IMF61,
IMB41C,
IMB42C
IM46CGR,
IMF68HR
28APR2010
7168-m
IM06D
IM48I
IM03D
IMB03C
IMC06C
IM03P
IMF61
IME06
IM42P
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H05V-k 0.75
Abstract: EN 60998-1 H05VK H05V-K din 17670 8-928247-2
Text: METRIC Catalogue 1654742 Rast 5 Dimensions are millimetres over inches Revised 5-04 Table of Contents AMP multifitting Mark II Introduction ……………………………………………………………………………2002 Direct and Indirect Connection 5.0mm Centerline…………………………………2003
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KBPC40
Abstract: KBPC50 50p bridge rectifier
Text: KBPC40, 50P/W SERIES W TE PO WE R SEM IC O ND UC TO R S 40, 50A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation Case to Terminal Isolation Voltage 2500V
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KBPC40,
50P/W
E157705
MIL-STD-202,
KBPC40
KBPC50
50p bridge rectifier
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Untitled
Abstract: No abstract text available
Text: WTE POWER SEMICONDUCTORS KBPC15, 25, 35P/W SERIES 15, 25, 35A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A A ! ! ! Low Reverse Leakage Current C Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation
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KBPC15,
35P/W
E157705
MIL-STD-202,
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02p marking
Abstract: No abstract text available
Text: KBPC40P SERIES 40A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Diffused Junction A Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance
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KBPC40P
E157705
02p marking
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Untitled
Abstract: No abstract text available
Text: KBPC40P SERIES WTE POWER SEMICONDUCTORS Pb 40A HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER Features Diffused Junction A Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D Case to Terminal Isolation Voltage 2500V
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KBPC40P
E157705
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kbpc
Abstract: KBPC15 KBPC1500P KBPC1500PW KBPC1501P KBPC1501PW KBPC1502P KBPC1502PW KBPC1504P KBPC15P
Text: KBPC15P SERIES WTE POWER SEMICONDUCTORS Pb 15A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V
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KBPC15P
E157705
kbpc
KBPC15
KBPC1500P
KBPC1500PW
KBPC1501P
KBPC1501PW
KBPC1502P
KBPC1502PW
KBPC1504P
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KBPC1000P
Abstract: No abstract text available
Text: KBPC10P SERIES WTE POWER SEMICONDUCTORS Pb 10A SINGLE-PHASE BRIDGE RECTIFIER Features Diffused Junction A Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D Case to Terminal Isolation Voltage 2500V
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KBPC10P
E157705
KBPC1000P
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KBPC2508PW
Abstract: KBPC25 KBPC2500P KBPC2500PW KBPC2501P KBPC2501PW KBPC2502P KBPC2502PW KBPC2504P KBPC25P
Text: KBPC25P SERIES WTE POWER SEMICONDUCTORS Pb 25A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V
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KBPC25P
E157705
KBPC2508PW
KBPC25
KBPC2500P
KBPC2500PW
KBPC2501P
KBPC2501PW
KBPC2502P
KBPC2502PW
KBPC2504P
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Untitled
Abstract: No abstract text available
Text: KBPC50P SERIES 50A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Diffused Junction A Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance
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KBPC50P
E157705
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Untitled
Abstract: No abstract text available
Text: KBPC35P SERIES 35A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Diffused Junction A Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance
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KBPC35P
E157705
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Philips MARKING CODE
Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
Philips MARKING CODE
sot23 02p
2N7002 MARKING 702
sot23 marking code m8p
BSS84 MARKING CODE
BSN20 MARKING
marking pKX sot23
marking M8p
2N7002 PHILIPS SOT323
702 sot23
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sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER
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OT143
OT343
BF510
BF994S
BST120
BF511
BF996S
BST122
BF512
BF997
sot23 marking M6p
PMBFJ111
PMBFJ174
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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02p SMD TRANSISTOR
Abstract: No abstract text available
Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application
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OCR Scan
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bbS3131
BST82
175DSon
02p SMD TRANSISTOR
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02p SMD TRANSISTOR
Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
Text: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application
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OCR Scan
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BST82
BST82
RDSonat25Â
02p SMD TRANSISTOR
BST82 SMD
SMD TRANSISTOR MARKING DM
sot23 02p
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