Si9934DY
Abstract: No abstract text available
Text: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2
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Si9934DY
S-49532--Rev.
02-Feb-98
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Si9925DY
Abstract: No abstract text available
Text: Si9925DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.5 V "3.6 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET
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Si9925DY
Diss40
S-49532--Rev.
02-Feb-98
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Si9426DY
Abstract: No abstract text available
Text: Si9426DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si9426DY
S-49532--Rev.
02-Feb-98
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Si9426DY
Abstract: No abstract text available
Text: Si9426DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si9426DY
S-49532--Rev.
02-Feb-98
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Si9934DY
Abstract: No abstract text available
Text: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2
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Si9934DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si9925DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.5 V "3.6 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET
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Si9925DY
S-49532--Rev.
02-Feb-98
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Si9934DY
Abstract: MS4080
Text: Si9934DY Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 12 rDS(on) (W) ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET
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Si9934DY
S-49532--Rev.
02-Feb-98
MS4080
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC DIST AA ALL RIGHTS RESERVED. REVISIONS 20 LTR c DESCRIPTION REV PER EC 0502-0069-98 DATE DUN APVD 02FEB98 cw MH D MATERIAL: COVER-THERMOPLASTIC. 2. TWO IDENTICAL COVERS REQUIRED FOR ASSEMBLY
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02FEB98
24JAN79
2EJAN79
11JUN97
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s26d
Abstract: No abstract text available
Text: T E M IC SÌ9926DY Semiconductors Dual N-Channel 2.5-V G-S Rated MOSFET P rod uct S u m m a r y v DS(V) 20 r DS(on) (£2) I d (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ Vos = 2.5 V ±5.2 Di D 2 D2 Di U S O -8 u Gi Ô Top View Ô S2 Si N-Channel MOSFET N-Channel MOSFET
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9926DY
S-49532--
02-Feb-98
s26d
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gfr DIODE
Abstract: No abstract text available
Text: T E M IC SÌ9934DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V ) 12 r DS(on) (£2) I d (A ) 0.05 @ VGS = -4.5 V 0.074 @ VGs = -2.5 V ±5 ±4.1 SO-8 Gi Top View Di Di D'2 D 2 P-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)
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9934DY
150QC
S-49532--Rev.
02-Feb-98
gfr DIODE
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Untitled
Abstract: No abstract text available
Text: Tem ic Si9426DY Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) 20 r DS(on) (£2) I d (A) 0.0135 @ VGs = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 i D Q SO-8 6 s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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Si9426DY
S-49532â
02-Feb-98
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194182-1
Abstract: No abstract text available
Text: r 7 8 T H I S DRAWING C COPYRIGHT * 15 U N P U B L IS H E D . R E L E A 5 E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. AMPOWER is a 6 5 ,19 ALL R IG H T S R ES E R V E D . trademark [ . 54] C -4.9 [.19] ooo ooo ooo ooo ooo ooo ooo ooo S>< [ Z Z
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103639-4
Abstract: No abstract text available
Text: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 6 5 2 3 4 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC 19 AD RESERVED. 00 REV I 5 I0N5 K L M N REV OBS REV REV REV REV REV REV REV REV
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02-FEB-98
05FEB01
05-FEB-01
amp34723
/home/amp34723/edmmod
103639-4
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Untitled
Abstract: No abstract text available
Text: T E M IC SÌ9925DY Semiconductors Dual N-Channel 2.5-V G-S Rated MOSFET P rod uct S u m m a r y V DS(V) 20 r DS(on)(^) I d (A) 0.05 @ VGS = 4.5 V ± 5.0 0.06 @ VGS = 3.0 V ±4.2 0.08 @ VGS = 2.5 V ±3.6 Di D2 D 2 Di u S O -8 Gi O Top View u IS" »— 6 Ô
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9925DY
S-49532--
02-Feb-98
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color 21092
Abstract: IPS35
Text: 3 DRAWING THIS 0 MADE DRAWING COPYRIG HT RESERVED. IN THIRD 15 U N P U B L I S H E D . 19 AMP ANGLE BY PRODUCTS MAY AMP BE 2 PROJECTION MOD R EL E AS E D FOR P U B L I C A T I O N I N C O R P O R A T E D , HARR I S B U R G , P A . COVERED BY U.S. AND BO R E IGN
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REL2544
AR2194
15-JUL-99
amp33743
/home/amp33743/edmmod
color 21092
IPS35
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Untitled
Abstract: No abstract text available
Text: 3 DRAWI NG THIS D MADE DRAWING COPYRIGHT RE SERVED. IN 15 THIRD UNPUBLISHED. 19 AMP ANGLE BY PRODUCTS RELEASED AMP MAY BE 2 PROJECTION FOR PUBLICATION ] N C O R P O R A T E D , HA R R I S B U R G , P A . COVERED U .S . BY AND B O R E I GN ALL INTERNATIONAL
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AR2368
02-FEB-98
0310-0BER
/home/amp01193/edmmod/ecn
-JUL-00
amp01193
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Untitled
Abstract: No abstract text available
Text: 3 DRAWI NG T H IS MADE DRAWING COPYRIGHT RESERVED. AMP IN IS THIRD ANGDE U N PU BLISH ED . 19 BY PRODUCTS MAY AMP BE 2 PROJECTION RELEASED FOR PU BLIC A TIO N ] N C O R P O R A T E D , HARR I S B U R G , P A . COVERED BY U.5. AND FOREIGN ALL INTERNATIONAL
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AD-4171
AD-6547
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING THIS MA D E IN THIRD DRAWING 0 ANGLE IS 0NP0BLI5HED. COPYRIGHT 6 4 5 2 3 PROJECTION 19 RELEASED BY AMP FOR POBLICATION INCORPORATED. ALL INTERNATIONAL L OC , 19 RIGHTS DI 5 T AD RESERVED. REV I 5 I0N5 00 Z O NE LTR GOLD IN THE .000100-.000200 SOLDER
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02-FEB-98
05FEB01
05-FEB-01
amp34723
/home/amp34723/edmmod
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING THIS MADE IN DRAWING THIRD ANGLE 15 U N P U B L I 5 H E D COPYRIGHT 6 5 2 3 4 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI S T LOC 19 AD RESERVED. 00 REV I 5 I0N 5 LTR ZONE D E 5 C R [R T IO N DATE APPD
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02-FEB-98
05FEB01
05-FEB-01
amp34723
/home/amp34723/edmmod
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Untitled
Abstract: No abstract text available
Text: 3 DRAWING T H IS 0 MADE DRAWING COPYRIG HT RESERVED. IN 15 THIRD U N PU BLISH ED . 19 AMP ANGLE PRODUCTS RELEASED AMP BY MAY BE 2 PROJECTION FOR ] N C O R P O R A T E D , HARR I S B U R G , PA . COVERED U.S. BY AND BO RE IGN DIST LOC PU BLIC A TIO N ALL
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AD-4171
156it,
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AD-5122
Abstract: AD-6161 C0038
Text: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 6 5 2 3 4 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST L OC 19 AD RESERVED. .00038 [.000015] GOLD .00254 [.000100] NATTE ALL D 2\ 3\ OVE R
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02-FEB-98
05FEB01
5QP05T,
05-FEB-01
amp34723
/home/amp34723/edmmod
AD-5122
AD-6161
C0038
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Untitled
Abstract: No abstract text available
Text: 3 DRAWING THIS D MADE D RAWING COPYRIGHT RESERVED. IN 15 THIRD UNPUBLISHED. 19 AMP ANGLE PRODUCTS RELEASED AMP BY MAY BE 2 PROJECTION FOR PUBLICATION ] NC OR P OR A T E D , HARR I S B U R G , PA . COVERED BY U .S . AND BORE IGN DIST LOC ALL INTERNATIONAL
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02-FEB-98
0010E
/home/ampO1193/edmread
08-AUG-00
ampO1193
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3994
Abstract: No abstract text available
Text: 2 3 DRAWING T H IS P MADE IN THIRD ANGLE DRA RELEASED COPYRIGHT RESERVED. PROJECTION 19 AMP AMP BY PRODUCTS MAY BE FOR ] N C O R P O R A T E D , H AR R I S B U R G , PA . COVERED U.S. BY AN D FOREIGN DIST LOC PU B LIC A TIO N ALL INTERNATIONAL PATENTS AND/OR
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AR-2268
AD-4171
AD-6052
0G3C-0019-00
02-FEB-98
9-JUL-00
ampOl193
/home/ampOl193/edmmod/ecn
3994
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Untitled
Abstract: No abstract text available
Text: _ SÌ4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET VD. (V) r d s <o n ] (Q ) lD (A) 0.037 @ V q s = 10 V ± 5 .8 0.055 @ V GS = 4.5 V ± 4 .7 30 u u D, SO-8 , A B S O L U T E M A X I M U M R A T I N G S ( T fl f, C U N L E S S O T H E R W I S E
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4936DY
02-Feb-98
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