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    MTA4N60E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA4N60E Fully Isolated TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 600 VOLTS RDS on = 1-20 OHM


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    MTA4N60E b3b7254 01G3Q01 01G3GG2 MTA4N60E PDF